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How do you bypass a transistor?

Heterostructure-emitter bipolar transistor

Drain-induced barrier lowering

Field-effect transistor

Static induction transistor

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Papers (7)	Insight
Proceedings Article•DOI A 1.4 dB insertion-loss, 5 GHz transmit/receive switch utilizing novel depletion-layer-extended transistors (DETs) in 0.18 /spl mu/m CMOS process Takahiro Ohnakado, A. Furukawa, M. Ono, Eiji Taniguchi, Satoshi Yamakawa, K. Nishikawa, T. Murakami, Y. Hashizume, K. Sugahara, Tatsuo Oomori - Show less +9 more 11 Jun 2002 17 Citations	This transistor can be simultaneously formed with the conventional transistor with the addition of only one mask-step.
Journal Article•DOI Numerical study of ohmic-schottky carbon nanotube field effect transistor Reza Yousefi, Seyed Saleh Ghoreyshi - Show less +1 more 17 May 2012-Modern Physics Letters B 12 Citations	In this paper, we propose a structure that improves the OFF state and switching behavior of the transistor without increase in the transistor length.
Journal Article•DOI Four-Terminal P-N-P-N Transistors J. J. Ebers 01 Nov 1952 51 Citations	A simplified circuit is obtained which can be used when the p-n-p-n transistor is connected as a hook-collector transistor.
Open access•Book Chapter•DOI Optical Fault Induction Attacks Sergei Skorobogatov, Ross Anderson - Show less +1 more 13 Aug 2002 828 Citations	Circuits can be designed so that single-transistor failures do not lead to security failure.
Journal Article•DOI Electrical model of the floating gate defect in CMOS ICs: implications on I/sub DDQ/ testing Victor Champac, Antonio Rubio, Joan Figueras - Show less +2 more 01 Jan 1994-IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 95 Citations	In addition, it is shown that the floating gate transistor can be modeled as a weakly conductive stuck-on transistor or as a stuck-open transistor depending on the values of the parameters characterizing the defect.
Journal Article•DOI A self-assembled nano optical switch and transistor based on a rigid conjugated polymer, thioacetyl-end-functionalized poly(para-phenylene ethynylene). Wenping Hu, Hiroshi Nakashima, Kazuaki Furukawa, Yoshiaki Kashimura, Katsuhiro Ajito, Yunqi Liu, Daoben Zhu, Keiichi Torimitsu - Show less +7 more 09 Mar 2005-Journal of the American Chemical Society 73 Citations	Moreover, the device works well as a p-type transistor.
Journal Article•DOI High-Performance Buried-Gate Surrounding Gate Transistor for Future Three-Dimensional Devices Makoto Iwai, Yasue Yamamoto, Ryohsuke Nishi, Hiroshi Sakuraba, Tetsuo Endoh, Fujio Masuoka - Show less +5 more 08 Oct 2004-Japanese Journal of Applied Physics 23 Citations	We propose the buried-gate surrounding gate transistor (BG-SGT) as a high-performance transistor.

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