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This analysis based on a method which simulates the interlayer interactions in lattice-mismatched thin films shows that thin films with four or more layers can have stable lattice-matched stacking geometries.
The mismatch may indicate that in very thin films the lattice distortion and strain field can be relaxed.
A large lattice mismatch value of 5.7% (to be compared to the normal value of 4.13%) is observed from selected area electron diffraction patterns and high-resolution TEM images of cross-sectional specimens, which suggests that the growing high-temperature film under the film growth condition may have a larger lattice constant and a different thermal expansion behavior with respect to the bulk material.
In large lattice mismatch systems, we show that epitaxial growth of thin films is possible by matching of domains where integral multiples of major lattice planes match across the interface.
Since the lattice mismatch strain varies with temperature, it was finally confirmed that the critical dislocation density that leads to the measured residual stress variation with film thickness should be determined from the lattice mismatch strain at the deposition temperature.
The results presented here indicate that the lattice mismatch between the film and the substrate is accommodated mainly by interface misfit dislocations above some critical thickness.
Importantly, our results show that the lattice mismatch is the dominant factor determining the accuracy of layered approximants.
Thus, the results presented here indicate that the lattice mismatch between the film and the substrate is accommodated mainly by interface misfit dislocations above some critical thickness.
This leads to the conclusion that the mitigation of lattice mismatch, essentially through interface misfit dislocations, could have varied with the change of the film thickness.
These measurements indicate that the lattice mismatch between the metallic overlayer and substrate is relieved by the formation of domains randomly rotated in the plane of the film.

Related Questions

What is thickness of thin films?5 answersThe thickness measurement of thin films is crucial in various fields such as nanostructure characterization, material properties analysis, and optical engineering. Different methods have been proposed for measuring thin film thickness. These include using X-ray photoelectron spectroscopy, ellipsometry, secondary electron and backscattered electron yields analysis, X-ray absorption spectroscopy with spectral separation and a modified logarithmic equation, confocal spectral imaging based on thin-film spectral interference principles, and Coherence Scanning Interferometry (CSI) combined with the 'helical complex field' (HCF) function for sub-nanometer thickness measurements. The advancements in these techniques allow for precise and efficient measurement of thin film thickness, ranging from nanometers to microns, catering to the diverse needs of industries and research fields.
What are the mathematical models used to model thin film fluid flow?5 answersMathematical models used to model thin film fluid flow include the homotopy perturbation method combined with Laplace transform and Pade´ approximation approach. Another model is the adaptive fluid modeling framework that uses a traditional 3D Navier-Stokes model for bulk fluid flow and switches to a pseudo 2D thin film flow model when appropriate. The homotopy perturbation method along with Caputo definition of fractional derivative is used to solve modeled fractional-order boundary value problems in thin film flow of non-Newtonian Johnson–Segalman fluid. Additionally, a two-dimensional flow model has been proposed for viscous fluid flow between two close moving surfaces, which converges to the same limit problem as the Navier-Stokes equations depending on the boundary conditions.
How does affect the angular distribution of elements the stoichiometry of thin films?5 answersThe angular distribution of elements can affect the stoichiometry of thin films. In pulsed laser deposition (PLD), the interaction between the laser ablated plasma and the background gas can influence the composition of the film. The incorporation probability of species at the growth surface, which determines the film thickness distributions and final stoichiometry, depends on the energy of the deposited particles and the substrate absorbing properties. Additionally, the relative effect of various PLD processes on the stoichiometry of films can be examined using interactive spreadsheets and experimental results. Furthermore, a method called Low-Angle X-ray Spectrometry (LAXS) can provide real-time composition determination of multi-element films during PLD, allowing for optimization of stoichiometric film deposition. Overall, understanding the angular distribution of elements and its impact on film stoichiometry is crucial for controlling the properties of thin films.
How do you choose a substrate for thin film?10 answers
How do you make a thin film?10 answers
How thin is a thin film?10 answers

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