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Proceedings ArticleDOI
28 May 2000
14 Citations
The design and measurements of a common-source amplifier illustrate the appropriateness of the proposed methodology.
The amplifier system operates according to our design criteria to support targeted HT.
From the analysis, DG-DI MOSFET is the most suitable candidate for high speed switching application, simultaneously providing better performance as an amplifier.
Therefore, this method can be used for optimum design of CMOS DC-DC converter, such as dimensions of power stage MOSFET and switching frequency.
These stages serve as building blocks for more complex MOSFET amplifiers and allow the introduction of MOSFET integrated circuit design principles.
Following this systematic design procedure we can improve the amplifier performance significantly.
The design process demonstrated in this brief using the folded-cascode amplifier is applicable to a wide class of amplifier circuits.
Therefore, we can design Class E amplifier more easily than the conventional design procedure.
The amplifier's bandwidth is the broadest ever reported for a Si MOSFET technology.
Experimental results demonstrate the utility of the new amplifier design.

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