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How do you fix a broken transistor? 

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Field-effect transistor
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Papers (10)Insight
Journal Article•DOI
Source-gated thin-film transistors
John M. Shannon, Ed Gerstner 
22 Jul 2003-IEEE Electron Device Letters
86 Citations
The authors introduce a source-gated transistor that overcomes some of the fundamental limitations of the field-effect transistor.
Proceedings Article•DOI
Transistor width dependence of LER degradation to CMOS device characteristics
J. Wu, Jihong Chen, Kaiping Liu 
07 Nov 2002
17 Citations
We found that when the transistor width becomes comparable to the LER spatial period, the resulting transistor Ion/Ioff degradation presents a very different signature from that of wide transistor cases.
Journal Article•DOI
Rational Design of High-Mobility Semicrystalline Conjugated Polymers with Tunable Charge Polarity: Beyond Benzobisthiadiazole-Based Polymers
Yang Wang, Tsukasa Hasegawa, Hidetoshi Matsumoto, Takehiko Mori, Tsuyoshi Michinobu 
01 Jan 2017-Advanced Functional Materials
73 Citations
As a consequence, a remarkable thin film transistor performance is obtained.
Journal Article•DOI
Influence of measuring environment on the electrical characteristics of pentacene-based thin film transistors
Yu-Wu Wang, Yu-Wu Wang, Horng Long Cheng, Yi-Kai Wang, Yi-Kai Wang, Tang-Hsiang Hu, Jia-Chong Ho, Cheng-Chung Lee, Tan Fu Lei, Ching-Fa Yeh 
22 Nov 2004-Thin Solid Films
40 Citations
The transistor in a high vacuum outperforms that in air.
Journal Article•DOI
Low-Voltage Transient/Biodegradable Transistors Based on Free-Standing Sodium Alginate Membranes
Jie Guo, Jingquan Liu, Bin Yang, Guanghui Zhan, Kang Xiaoyang, Hong-Chang Tian, Longjun Tang, Xiang Chen, Chunsheng Yang 
21 Apr 2015-IEEE Electron Device Letters
18 Citations
In this letter, we report a novel transient/ biodegradable transistor.
Journal Article•DOI
Numerical study of ohmic-schottky carbon nanotube field effect transistor
Reza Yousefi, Seyed Saleh Ghoreyshi 
17 May 2012-Modern Physics Letters B
12 Citations
In this paper, we propose a structure that improves the OFF state and switching behavior of the transistor without increase in the transistor length.
Open access•Book Chapter•DOI
Optical Fault Induction Attacks
Sergei Skorobogatov, Ross Anderson 
13 Aug 2002
828 Citations
Circuits can be designed so that single-transistor failures do not lead to security failure.
Proceedings Article•DOI
Nondestructive testing of power MOSFET's failures during reverse recovery of drain-source diode
G. Busatto, O. Fioretto, A. Patti 
23 Jun 1996
12 Citations
This paper advances the hypothesis that the failure mechanism is strictly related to how this transistor is being activated during reverse recovery.
Journal Article•DOI
Electrical model of the floating gate defect in CMOS ICs: implications on I/sub DDQ/ testing
Victor Champac, Antonio Rubio, Joan Figueras 
01 Jan 1994-IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
95 Citations
In addition, it is shown that the floating gate transistor can be modeled as a weakly conductive stuck-on transistor or as a stuck-open transistor depending on the values of the parameters characterizing the defect.
Proceedings Article•DOI
Analysis of the floating gate defect in CMOS
Victor Champac, A. Rubio, Joan Figueras 
27 Oct 1993
15 Citations
It is shown that a floating gate transistor is not a stuck-open transistor and that significative values of quiescent current consumption may exist.

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