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In the output characteristics a stronger kink effect has been observed at short L which, from a comprehensive analysis of the current components, can be attributed to an enhanced parasitic bipolar transistor action.
It is shown that by using a dual six-port reflectometer and an appropriate calibration procedure, it is possible to measure at the same reference plane the ratio between the incident and reflected waves and the power flow at the output of the test transistor.
These parameters give a useful insight into the physical behavior of the transistor, which lends itself to derive a scalable transistor model and to make a proper circuit design.
We propose and demonstrate a test chip for extraction of spatial and layout dependent variations in both transistor and interconnect structures.
Large-area HBT test structures exhibit good transistor characteristics, with current gain /spl beta//spl ap/400 regardless of whether the base current is supplied by a test base electrode or one of the emitter contacts.
It provides a practical tool for enhancement of horizontal well test interpretation, and its practical applicability is illustrated by synthetic and actual field cases.
However, circuit complexity makes test preparation, at transistor level, prohibitive.
Comparison of the transistor output characteristics with the experimental data has showed the adequate accuracy of simulation for practical.
In this paper, we propose a structure that improves the OFF state and switching behavior of the transistor without increase in the transistor length.
The utilisation of this test protocol to assess maximal horizontal deceleration can provide new insights into individual maximal horizontal deceleration capabilities.
It also represents a noninvasive way to build transistor test structures that incorporate certain classes of chemically and mechanically fragile organic semiconductors.
Transistor variant data that result in matching transistor drive current show an excellent match for SET pulsewidths and cross sections.
The reversed fixation test is necessary to establish the diagnosis of dissociated horizontal deviation.
Our test chip also demonstrates the effectiveness of design with transistor array with several typical analog circuits.
The tool has proven to bevery useful in the early evaluation of test strategies, providing similarresults to those obtained at the transistor-level.
The method is particularly suitable for compact modeling and technology characterization from high-frequency transistor test structures with no separate substrate contacts.

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