How is transistor gain measured?
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| Employing the digital modulator, this loop gain can be measured even with a switching regulator employing the current injected control. | |
| The current gain is clearly higher than the one calculated for a bipolar junction transistor with the same doping profile because the base-emitter hole current is suppressed by the Ga/sub 0.5/In/sub 0.5/P potential barrier in the valence band. | |
620 Citations | The measured gain is in good agreement with that calculated from the Raman cross section. |
| The gain-per-stage of the amplifier is amongst the highest reported in any transistor technology in this frequency band. | |
| The predicted variation in transistor performance compares well with the measured silicon data for a 45-nm strained CMOS technology. | |
| The model can extrapolate transistor gain specifications without recharacterizing device types for temperature or neutron effects. | |
| This maximum frequency of oscillation can also be used to predict the approximate gain obtainable from a transistor at high frequencies, and the efficiency which may be realized from the transistor used as a high frequency oscillator. | |
| Computed results for the performance of a particular high-frequency transistor in the common-base and common-emitter configurations verify the main conclusions of the analysis and indicate the relative merits of the two configurations in regard to power gain with and without feedback applied. | |
70 Citations | The linearity in the measured gain scale is understood in the context of the longitudinal proximity effect from the electrical bias leads resulting in transition characteristics that are strongly dependent upon TES size. |
| The bipolar gain can be determined for each transistor, without the need to compare the long and short devices. | |
32 Citations | The experimental results show that a two-transistor inverting stage provides the lowest mean voltage gain. |
105 Citations | This is the best reported gain performance for any transistor. |
| We show in this work that the extrinsic current gain /spl beta//sub EXT/ measured at a low current level can be erroneously attributed to the gain of the intrinsic transistor. | |
34 Citations | Calculated results will accurately reproduce the significant decrease in transistor current gain with a high impurity concentration at emitter-base junction. |
| The net result is a significant improvement in the transistor gain. | |
19 Citations | The parameters are extracted from a single measurement in the forward active region on one transistor test structure with two separate base contacts, making it a simple and attractive tool for bipolar transistor characterization. |
29 Citations | Measured transistor values show excellent potential for both power and low-noise amplification applications. |
22 Citations | These calculations confirm tie general picture given of transistor action. |
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