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How many transistors are in a modern cell phone? 

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Most of the benefits can be obtained by making changes to relatively few transistors in the cell, early in the design cycle.
Experimental results, which are given for a number of grown-junction transistors, tend to confirm the theoretical expression.
Comparison with bulk Si transistors reveals a number of interesting features of SIMOX devices, which are explained using comprehensive models.
Moreover it achieves 55% reduction in power delay product compared to the DICE cell (with 12 transistors) providing a significant improvement in soft error tolerance.
Comparing tri-gate transistors to conventional bulk CMOS device at the same technology node, these non-planar devices are found to be competitive with similarly-sized bulk CMOS transistors.
Since the number of inputs of a standard cell is significantly smaller than its number of transistors, exploring this reduced search space becomes feasible.
The modified cell can also multiply mixed current/voltage signals and operates equally well with NMOS transistors instead of bipolar ones.
Beside, the proposed models can also be expected to be the potential mathematical foundations for implementating the Electronic CAD cell libraries of the nanoscale MOS transistors.
The transistors exhibit high current gains over 200, which is comparable to those in transistors grown on InP substrates.
There can be little doubt that the cell phone is one of the most rapidly diffused devices in the history of technological innovation.
The efficiency of the proposed TMRAM cell becomes more apparent in the TMRAM block structures due to the reduction in the number of transistors.
variations on transistors' widths and lengths, which reduces the stability, readability and write-ability of the cell, thereby increasing parametric yield loss.
Transistors in each cell have a combined layout that reduces parasitic capacitances, leading to significant improvement in the PAE at mm-wave frequencies.
These are the highest values ever reported for organic transistors.
A new cell composed of a pair of adjacent gates provides high utilization of input transistors.
Vertical Organic Transistors are a novel technology that has the potential to overcome these limitations of OFETs.
In spite of using more transistors, the proposed SRAM cell occupies essentially the same area as Quatro.
This is one of the first studies that deals with a wide-range comparative investigation of modern cell phones, unlike the majority of existing work, which do not extend beyond the obsolete generic phone case.

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Can i detect the torque of perpendicular MTJ by stfmr?
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Yes, the torque of a perpendicular Magnetic Tunnel Junction (MTJ) can be detected using Spin-Torque Ferromagnetic Resonance (ST-FMR). ST-FMR is a technique that can be used to measure the efficiency of spin-orbit torques (SOTs) in spintronic devices. In the case of a perpendicular MTJ, the ST-FMR spectrum shows two resonance modes: in-plane and out-of-plane magnetization precession modes. By performing modulation of the damping measurement for these modes, the dampinglike torque efficiency can be determined. The obtained values of dampinglike torque efficiency are consistent with each other, indicating the effectiveness of ST-FMR measurements for determining the torque efficiency of a perpendicular MTJ.
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To reduce leakage current in SRAM, several techniques can be employed. One approach is the use of low-Vt (threshold voltage) transistors in combination with high-Vt transistors, such as in Multi-Threshold CMOS (MTCMOS) and Variable-Threshold CMOS (VTCMOS) designs. Another technique is the implementation of a leakage-controlled transistor (lector) structure, which includes two leakage-controlled transistors connected within the logic gate. These transistors act near their cut-off mode, reducing leakage current. Additionally, the DTMOS technique can be used to reduce effective leakage currents and dynamic power dissipation in SRAM cells. Another proposed method is the use of an Ultra8T SRAM design, which employs a leakage detection strategy to aggressively reduce the lowest possible voltage (VDDMIN) and minimize leakage current. These techniques aim to address the challenge of leakage current in SRAM and improve power efficiency in energy-constrained scenarios.
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Can the aesthetic experience of art or nature influence the salivary levels of oxytocin?
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The aesthetic experience of art or nature can influence the salivary levels of oxytocin. In a pilot study, Tanaka et al. found that participatory art activities led to a significantly higher increase in salivary oxytocin levels in children with autism spectrum disorder (ASD) compared to typically developed children. Additionally, Ohshiro et al. developed an organic field-effect transistor (OFET) sensor that successfully detected oxytocin in human saliva, suggesting the potential for portable sensors to monitor oxytocin levels. Furthermore, Breiby's study on nature-based tourism revealed that aesthetic dimensions such as scenery/viewing and art/architecture can influence tourists' satisfaction, indicating a potential link between aesthetics and oxytocin release. Although not directly addressing oxytocin levels, Tsai and Tsai's study on interactive brick sculpture discussed the elements of aesthetic interaction and pleasure, which could potentially impact oxytocin release during art experiences. Overall, these studies suggest that the aesthetic experience of art or nature may have an influence on salivary oxytocin levels.