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How many transistors are in a Ryzen 5 2600?

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Proceedings Article•DOI Physical design automation at transistor level Ricardo Reis 25 Mar 2008 7 Citations	This allows a reduction on the number of needed transistors to implement a circuit.
Journal Article•DOI Low RC-Constant Perforated-Channel HFET Grigory Simin, MM Islam, Mikhail Gaevski, J. Deng, Remis Gaska, Michael Shur - Show less +5 more 14 Feb 2014-IEEE Electron Device Letters 17 Citations	These results are especially important for new generations of power switching transistors.
Journal Article•DOI Influence of Field-Plate Configuration on Power Dissipation and Temperature Profiles in AlGaN/GaN on Silicon HEMTs Vice Sodan, Herman Oprins, Steve Stoffels, Martine Baelmans, Ingrid De Wolf - Show less +4 more 29 Jun 2015-IEEE Transactions on Electron Devices 31 Citations	Consequently, their design is important for a good thermal behavior and reliability of the transistors.
Proceedings Article•DOI Variability in sub-100nm SRAM designs R. Heald, P. Wang - Show less +1 more 07 Nov 2004 131 Citations	Hence, the small transistors in SRAM cells are particularly sensitive to these variations.
Journal Article•DOI High-Frequency Power Gain of Junction Transistors R. L. Pritchard 01 Sep 1955 39 Citations	Such calculations show, for example, that 30 db of gain should be available at 5 mc and that such transistors should be capable of oscillating up to several hundred mc.
Journal Article•DOI Gate dielectric reliability and instability in GaN metal-insulator-semiconductor high-electron-mobility transistors for power electronics Jesus A. del Alamo, Alex Guo, Shireen Warnock - Show less +2 more 28 Sep 2017-Journal of Materials Research 14 Citations	Our findings paint a picture of BTI and TDDB that in many respects is similar to that of Si transistors but with some unique characteristics.
Journal Article•DOI Off-state breakdown in InAlN/AlN/GaN high electron mobility transistors Jan Kuzmik, G. Pozzovivo, J.-F. Carlin, M. Gonschorek, Eric Feltin, Nicolas Grandjean, Gottfried Strasser, Dionyz Pogany, Erich Gornik - Show less +8 more 01 Jun 2009-Physica Status Solidi (c) 18 Citations	Our conclusions are further supported by measuring all currents in the three-terminal configuration of the transistors before and during the breakdown and by using a drain current injection technique.

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