How many transistors are in a Ryzen 9?
Answers from top 17 papers
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| Papers (17) | Insight |
|---|---|
155 Citations | These transistors show a positive temperature coefficient in the on-resistance characteristics, which will enable easy paralleling of the devices. |
| It is in a reasonable agreement with the experiments for both n-channel transistors and silicon on sapphire sample. | |
30 May 1999 | In this paper, we present a new and efficient switched-current memory cell consisting of six MOS transistors. |
| Our conclusions are also supported by the observation of similar activation energies for defects present in transistors of various device geometries. | |
| The results demonstrate a new scheme of building nanometer-scale transistors. | |
01 Jan 1987 | Predictions indicate that in ten years a 0.7μm CMOS micro-processor with 6-million transistors will execute 30-60 MIPS. |
| These are the fastest silicon transistors reported to date in terms of both fT and fmax figures. | |
| The parameter variations are random in nature and are expected to be more pronounced in minimum geometry transistors commonly used in memories such as SRAM. | |
| A new cell composed of a pair of adjacent gates provides high utilization of input transistors. | |
31 Citations | Consequently, their design is important for a good thermal behavior and reliability of the transistors. |
| Hence, the small transistors in SRAM cells are particularly sensitive to these variations. | |
| We show that it can lead all the way from DNA molecules to working transistors in a test-tube. | |
20 Citations | The transistors are scalable because of the thin silicon technology and the memories are highly scalable because they allow efficient coupling between the carriers and storage region. |
24 Citations | These transistors can allow unique design flexibility; for example, a NAND gate can be achieved in a uniformly doped nanowire with four contacts. |
| Our findings paint a picture of BTI and TDDB that in many respects is similar to that of Si transistors but with some unique characteristics. | |
| Our conclusions are further supported by measuring all currents in the three-terminal configuration of the transistors before and during the breakdown and by using a drain current injection technique. | |
555 Citations | This formula is consistent with two recent reports of interband tunnel transistors, which show lower than 60-mV/dec subthreshold swings and provides two simple design principles for configuring these transistors. |