How many transistors are in an i7?

Papers (10)	Insight
Proceedings Article•DOI A MOS Transistor-Array for Accurate Measurement of Subthreshold Leakage Variation Takashi Sato, Takumi Uezono, Shiho Hagiwara, Kenichi Okada, Shuhei Amakawa, Noriaki Nakayama, Kazuya Masu - Show less +6 more 26 Mar 2007 8 Citations	The proposed array structure and the procedure virtually eliminate usual constraint on the number of transistors that can be present in an array.
Journal Article•DOI Very high-mobility organic single-crystal transistors with in-crystal conduction channels Jun Takeya, Masakazu Yamagishi, Y. Tominari, R. Hirahara, Yasuhiro Nakazawa, Takeshi Nishikawa, T. Kawase, Tatsuya Shimoda, S. Ogawa - Show less +8 more 09 Mar 2007-Applied Physics Letters 666 Citations	These are the highest values ever reported for organic transistors.
Proceedings Article•DOI Stacked gate dielectrics with TaO for future CMOS technologies I.C. Kizilyaili, P.K. Roy, Frieder H. Baumann, R.Y. Huang, D. Hwang, C. Chacon, R. Irwin, Y. Ma, G. Alers - Show less +8 more 09 Jun 1998 26 Citations	The fabricated transistors exhibit excellent I-V characteristics.
Journal Article•DOI A Synthesis Methodology for Ternary Logic Circuits in Emerging Device Technologies Bodapati Srinivasu, K. Sridharan - Show less +1 more 12 Apr 2017-IEEE Transactions on Circuits and Systems I-regular Papers 72 Citations	Furthermore, the proposed approach requires, on an average, less than 10% of the number of the transistors in comparison with a recent decoder-based design for various ternary benchmark circuits.
Journal Article•DOI Transistor action in novel GaAs/W/GaAs structures G. E. Derkits, J. P. Harbison, J. Levkoff, D. M. Hwang - Show less +3 more 05 May 1986-Applied Physics Letters 13 Citations	These are the first reported metal gate transistors in the III‐V materials and the first using a nonepitaxial base and laterally seeded overgrowth.
Proceedings Article•DOI QsCores: trading dark silicon for scalable energy efficiency with quasi-specific cores Ganesh Venkatesh, Jack Sampson, Nathan Goulding-Hotta, Sravanthi Kota Venkata, Michael Taylor, Steven Swanson - Show less +5 more 03 Dec 2011 124 Citations	In this regime, utilizing transistors to design specialized cores that optimize energy-per-computation becomes an effective approach to improve system performance.
Journal Article•DOI Nanopotentiometry: Local potential measurements in complementary metal–oxide–semiconductor transistors using atomic force microscopy T. Trenkler, P. De Wolf, W. Vandervorst, Louis Hellemans - Show less +3 more 04 Jun 1998-Journal of Vacuum Science & Technology B 43 Citations	I–V characteristics of the transistors before and after preparation indicate that the sectioned transistors show a higher leakage current, but are still functionally operational.
Journal Article•DOI Enhanced Degradation in Power MOSFET Devices Due to Heavy Ion Irradiation J.A. Felix, Marty R. Shaneyfelt, J.R. Schwank, Scott M. Dalton, Paul E. Dodd, J.B. Witcher - Show less +5 more 12 Dec 2007-IEEE Transactions on Nuclear Science 60 Citations	The data are consistent with the formation of parasitic transistors resulting from the microdose deposited in the gate oxides of these devices by the heavy ions.
Journal Article•DOI Gate dielectric reliability and instability in GaN metal-insulator-semiconductor high-electron-mobility transistors for power electronics Jesus A. del Alamo, Alex Guo, Shireen Warnock - Show less +2 more 28 Sep 2017-Journal of Materials Research 14 Citations	Our findings paint a picture of BTI and TDDB that in many respects is similar to that of Si transistors but with some unique characteristics.
Journal Article•DOI Low-subthreshold-swing tunnel transistors Qin Zhang, Wei Zhao, Alan Seabaugh - Show less +2 more 27 Mar 2006-IEEE Electron Device Letters 555 Citations	This formula is consistent with two recent reports of interband tunnel transistors, which show lower than 60-mV/dec subthreshold swings and provides two simple design principles for configuring these transistors.