How many transistors are in an Iphone 13 pro?

Papers (15)	Insight
Proceedings Article•DOI 100 MHz CMOS circuits using sequential laterally solidified silicon thin-film transistors on plastic M.G. Kane, L. Goodman, Arthur H. Firester, P.C. van der Wilt, A. B. Limanov, James S. Im - Show less +5 more 05 Dec 2005	To our knowledge these are the highest performance transistors and the fastest circuits ever fabricated directly on plastic
Journal Article•DOI Characterization of Improved AlGaAs/GaAs Resonant Tunneling Heterostructure Bipolar Transistors J. S. Wu, Chun-Yen Chang, Chien-Ping Lee, Kou Hsiung Chang, Don Gey Liu, Der Cherng Liou - Show less +5 more 01 Feb 1991-Japanese Journal of Applied Physics	They are the best results to date for AlGaAs/GaAs resonant tunneling transistors.
Proceedings Article•DOI An implanted-emitter 4H-SiC bipolar transistor with high current gain Yi Tang, J.B. Fedison, T.P. Chow - Show less +2 more 19 Jun 2000 16 Citations	Bipolar transistors are attractive due to their small forward voltage drop and ease of fabrication compared to MOSFETs.
Journal Article•DOI High-transconductance n-type Si/SiGe modulation-doped field-effect transistors Khalid EzzEldin Ismail, Bernard S. Meyerson, S. A. Rishton, Jack O. Chu, S. F. Nelson, J. J. Nocera - Show less +5 more 01 May 1992-IEEE Electron Device Letters 122 Citations	These values far exceed those found in Si MESFETs and are comparable to the best results achieved in GaAs/AlGaAs modulation-doped transistors.<<ETX>>
Journal Article•DOI A 4T Low-Power Linear-Output Current-Mediated CMOS Image Sensor Fang Tang, Amine Bermak - Show less +1 more 01 Sep 2011-IEEE Transactions on Very Large Scale Integration Systems	The proposed operating technique greatly simplifies the pixel architecture with only four transistors and two control signals required, while six transistors and four control lines are required by its current-mediated counterpart.
Journal Article•DOI Nanopotentiometry: Local potential measurements in complementary metal–oxide–semiconductor transistors using atomic force microscopy T. Trenkler, P. De Wolf, W. Vandervorst, Louis Hellemans - Show less +3 more 04 Jun 1998-Journal of Vacuum Science & Technology B 43 Citations	I–V characteristics of the transistors before and after preparation indicate that the sectioned transistors show a higher leakage current, but are still functionally operational.
Open access•Book Chapter•DOI Principles of Neuromorphic Photonics. Bhavin J. Shastri, Alexander N. Tait, Thomas Ferreira de Lima, Mitchell A. Nahmias, Hsuan-Tung Peng, Paul R. Prucnal - Show less +5 more 03 Jan 2018-arXiv: Emerging Technologies 64 Citations	Moore’s law An observation that the number of transistors in an integrated circuit doubles every 18 to 24 months, doubling its performance.
Open access•Journal Article•DOI Design and fabrication of densely integrated silicon quantum dots using a VLSI compatible hydrogen silsesquioxane electron beam lithography process Yun P. Lin, Muhammad Husain, Feras M. Alkhalil, Nicholas J. Lambert, Julia I. Perez-Barraza, Yoshishige Tsuchiya, Andrew Ferguson, Harold M. H. Chong, Hiroshi Mizuta - Show less +8 more 01 Oct 2012-Microelectronic Engineering	These are the smallest high density double QD transistors achieved to date.
Open access•Journal Article•DOI A general translinear principle for subthreshold MOS transistors Teresa Serrano-Gotarredona, Bernabe Linares-Barranco, Andreas G. Andreou - Show less +2 more 01 May 1999-IEEE Transactions on Circuits and Systems I-regular Papers 76 Citations	The constraint of an even number of transistors is no longer necessary.
Journal Article•DOI Very high-mobility organic single-crystal transistors with in-crystal conduction channels Jun Takeya, Masakazu Yamagishi, Y. Tominari, R. Hirahara, Yasuhiro Nakazawa, Takeshi Nishikawa, T. Kawase, Tatsuya Shimoda, S. Ogawa - Show less +8 more 09 Mar 2007-Applied Physics Letters 666 Citations	These are the highest values ever reported for organic transistors.
Journal Article•DOI InP/InGaAs double-heterojunction bipolar transistors grown on [100] Si by metalorganic chemical vapor deposition Toshiki Makimoto, Kenji Kurishima, T. Kobayashi, T. Ishibashi - Show less +3 more 01 Jul 1991-IEEE Electron Device Letters	The transistors exhibit high current gains over 200, which is comparable to those in transistors grown on InP substrates.
Proceedings Article•DOI Stacked gate dielectrics with TaO for future CMOS technologies I.C. Kizilyaili, P.K. Roy, Frieder H. Baumann, R.Y. Huang, D. Hwang, C. Chacon, R. Irwin, Y. Ma, G. Alers - Show less +8 more 09 Jun 1998 26 Citations	The fabricated transistors exhibit excellent I-V characteristics.
Journal Article•DOI Room Temperature Hot Electron Transistors with InAs-Notched Resonant-Tunneling-Diode Injector Alan Seabaugh, Yung-Chung Kao, John N. Randall, William R. Frensley, Ali Khatibzadeh - Show less +4 more 15 May 1991-Japanese Journal of Applied Physics 36 Citations	To our knowledge these are the first In(GaAl)As hot electron transistors to exhibit 300 K gain of this magnitude.
Journal Article•DOI Vertical organic transistors. Björn Lüssem, Alrun A. Günther, Axel Fischer, Daniel Kasemann, Karl Leo - Show less +4 more 14 Oct 2015-Journal of Physics: Condensed Matter 69 Citations	Vertical Organic Transistors are a novel technology that has the potential to overcome these limitations of OFETs.
Journal Article•DOI Pushing the Performance Limit of Sub-100 nm Molybdenum Disulfide Transistors. Yuan Liu, Jian Guo, Yecun Wu, Enbo Zhu, Nathan O. Weiss, Qiyuan He, Hao Wu, Hung-Chieh Cheng, Yang Xu, Imran Shakir, Yu Huang, Xiangfeng Duan - Show less +11 more 08 Sep 2016-Nano Letters 110 Citations	Our study, for the first time, demonstrates that the 2DSC transistors can offer comparable performance to the 2017 target for silicon transistors in International Technology Roadmap for Semiconductors (ITRS), marking an important milestone in 2DSC electronics.