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How many transistors are in an Iphone 8?

Channel length modulation

Design space exploration

Transconductance

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Proceedings Article•DOI Dark silicon as a challenge for hardware/software co-design: invited special session paper Muhammad Shafique, Siddharth Garg, Tulika Mitra, Sri Parameswaran, Jorg Henkel - Show less +4 more 12 Oct 2014 62 Citations	In other words, chips will have an abundance of transistors, i. e., more than the number that can be simultaneously powered-on.
Journal Article•DOI Radiation-Hard ZnO Thin Film Transistors J. Israel Ramirez, Yuanyuan V. Li, Hitesh A. Basantani, Kevin D. Leedy, Burhan Bayraktaroglu, Gregg H. Jessen, Thomas N. Jackson - Show less +6 more 01 May 2015-IEEE Transactions on Nuclear Science 27 Citations	To the best of our knowledge, these are the most radiation-hard thin film transistors reported to date.
Journal Article•DOI Accurate Array-Based Measurement for Subthreshold-Current of MOS Transistors Takashi Sato, Hiroyuki Ueyama, Noriaki Nakayama, Kazuya Masu - Show less +3 more 03 Nov 2009 22 Citations	The proposed circuit structure and the procedure virtually eliminate usual constraint on the number of transistors that can be present in an array.
Journal Article•DOI Modeling of 10-nm-scale ballistic MOSFET's Y. Naveh, K.K. Likharev - Show less +1 more 01 May 2000-IEEE Electron Device Letters 119 Citations	The results show that transistors with channel length as small as 8 nm can exhibit either a transconductance up to 4000 mS/mm or gate modulation of current by more than 8 orders of magnitude, depending on the gate oxide thickness.
Journal Article•DOI Vertical organic transistors. Björn Lüssem, Alrun A. Günther, Axel Fischer, Daniel Kasemann, Karl Leo - Show less +4 more 14 Oct 2015-Journal of Physics: Condensed Matter 69 Citations	Vertical Organic Transistors are a novel technology that has the potential to overcome these limitations of OFETs.
Open access•Journal Article•DOI Shrinking limits of silicon MOSFETs: numerical study of 10 nm scale devices Y. Naveh, K.K. Likharev - Show less +1 more 01 Feb 2000-Superlattices and Microstructures 20 Citations	The results show that transistors with channel length as small as 8 nm can exhibit either a transconductance up to 4000 mS mm − 1or gate modulation of current by more than 8 orders of magnitude, depending on the gate oxide thickness.
Journal Article•DOI Enhanced Degradation in Power MOSFET Devices Due to Heavy Ion Irradiation J.A. Felix, Marty R. Shaneyfelt, J.R. Schwank, Scott M. Dalton, Paul E. Dodd, J.B. Witcher - Show less +5 more 12 Dec 2007-IEEE Transactions on Nuclear Science 60 Citations	The data are consistent with the formation of parasitic transistors resulting from the microdose deposited in the gate oxides of these devices by the heavy ions.

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