Search or ask a question

How many transistors are in Eniac?

Molecular electronics

Electron-beam lithography

Answers from top 8 papers

PDF

Open Access

More filters

Papers (8)	Insight
Journal Article•DOI Very high-mobility organic single-crystal transistors with in-crystal conduction channels Jun Takeya, Masakazu Yamagishi, Y. Tominari, R. Hirahara, Yasuhiro Nakazawa, Takeshi Nishikawa, T. Kawase, Tatsuya Shimoda, S. Ogawa - Show less +8 more 09 Mar 2007-Applied Physics Letters 666 Citations	These are the highest values ever reported for organic transistors.
Proceedings Article•DOI Physical design automation at transistor level Ricardo Reis 25 Mar 2008 7 Citations	This allows a reduction on the number of needed transistors to implement a circuit.
Journal Article•DOI Novel sub-100 nm thin film transistors S. Franssila, J. Paloheimo, Pekka Kuivalainen - Show less +2 more 15 Apr 1993-Electronics Letters 12 Citations	These are to the authors' knowledge the smallest polymer transistors reported.
Journal Article•DOI Fabrication of Ballistic Quantum Wires and Their Transport Properties Yukihiko Takagaki, Fujio Wakaya, Sadao Takaoka, Kenji Gamo, Kazuo Murase, Susumu Namba - Show less +5 more 20 Oct 1989-Japanese Journal of Applied Physics 15 Citations	We propose new side-gate transistors.
Journal Article•DOI From DNA to transistors Erez Braun, Kinneret Keren - Show less +1 more 01 Jun 2004-Advances in Physics 93 Citations	We show that it can lead all the way from DNA molecules to working transistors in a test-tube.
Proceedings Article•DOI An improved algorithm for transistors pairing for compact layout of non-series-parallel CMOS networks H. Zhang, K. Asada - Show less +1 more 09 May 1993 9 Citations	This method is useful for finding the best possible transistor pairs, including nondual transistors.
Journal Article•DOI In-plane light emission of organic light-emitting transistors with bilayer structure using ambipolar semiconducting polymers Hirotake Kajii, Hitoshi Tanaka, Yusuke Kusumoto, Takahiro Ohtomo, Yutaka Ohmori - Show less +4 more 01 Jan 2015-Organic Electronics 27 Citations	This work is anticipated to be useful for the development of in-plane light-emitting transistors.
Journal Article•DOI Gate dielectric reliability and instability in GaN metal-insulator-semiconductor high-electron-mobility transistors for power electronics Jesus A. del Alamo, Alex Guo, Shireen Warnock - Show less +2 more 28 Sep 2017-Journal of Materials Research 14 Citations	Our findings paint a picture of BTI and TDDB that in many respects is similar to that of Si transistors but with some unique characteristics.

My columns

Related Questions

How many transistors Eniac have?9 answers

How many transistors are in 5nm?8 answers

How many transistors are in a modern computer chip?8 answers

How many transistors are in i9 10900k?10 answers

How many transistors did the Eniac computer have when it was built?7 answers

How many transistors in my computer?8 answers

See what other people are reading

What is the number of studies on memcapacitor emulator in the literature?

There are five studies on memcapacitor emulators in the literature. These studies propose innovative designs for memcapacitor emulators using various components such as current feedback amplifiers, analog multipliers, resistors, and capacitors. The emulators are designed to operate at high frequencies, exhibit non-volatility behavior, and are robust against mismatch and process variations. Additionally, the studies demonstrate the expandability of memcapacitor circuits using memristors and mutators, enabling the construction of complex circuit configurations. The proposed emulators have been validated through simulations, experimental verifications, and post-layout analyses, showcasing their efficiency, low power consumption, and applicability in practical applications like neuromorphic computing.What is the typical storage time limit for silicon epitaxy wafers in various applications?

The storage time limit for silicon epitaxy wafers can vary depending on the specific application and storage conditions. For mirror-polished wafers, storing silicon wafers in an immersed state with hydrogen peroxide at concentrations of 0.05wt%-1wt% and temperatures of 10-30°C can prevent surface staining for up to 120 hours. Additionally, the efficiency limits of epitaxially grown silicon wafers can be optimized by quantifying losses from defects like decorated stacking faults and inhomogeneous processing, allowing for systematic material improvement. Nucleation annealing at 750°C followed by growth annealing at 1050°C can significantly enhance the generation lifetime of epitaxial layers, although it may not affect recombination lifetime, potentially due to defects from metallic impurities and boron complexes in heavily doped substrate regions.Lattice constant change of anatase TiO2 with oxygen deficiency?

The lattice constant change of anatase TiO2 with oxygen deficiency is influenced by various factors. Oxygen vacancies in TiO2 can lead to the formation of electron-rich active sites, affecting the material's properties. Reduced anatase TiO2 nanoparticles exhibit preferential electron localization at low-coordinated surface sites, forming Ti3+ species. Additionally, the presence of oxygen defects in anatase TiO2 results in a decrease in the energy band gap and a spatial expansion of the primitive cell. These changes in electronic states and structural properties due to oxygen deficiency contribute to alterations in the lattice constant of anatase TiO2, highlighting the intricate relationship between defect formation and lattice parameters in this material.How transparent oxides can be used as gate dielectric?

Transparent oxides can be utilized as gate dielectrics in various applications. For instance, in the study by Alshammari et al., a novel process was developed to fabricate thin film transistors (TFTs) using a binary oxide, Hf x Zn1- x O2- δ (HZO), for all transistor layers, including the gate and dielectric layers. This approach allowed for tuning the electronic properties of the oxide from conducting to insulating by adjusting the chemical precursors' flow ratio. Additionally, the work by ViolBarbosa et al. demonstrated that ionic liquid gating can induce a metallic phase in insulating films of WO3, altering the material's conductivity while maintaining transparency in the visible range. These studies highlight the versatility of transparent oxides in serving as gate dielectrics with tunable electronic properties for various electronic devices.How to make KMnO4 Mn 2 transparent to red?

To make KMnO4 Mn 2 transparent to red, one can utilize the preparation methods described in the provided research contexts. Context_1 details a process involving dissolving KMnO4 in an HF solution to obtain a K2MnF6 precursor, which can lead to a red fluorescent material when further processed. Context_2 presents a method using KMnO4 in a water solution to prepare a tetravalent manganese ion doped ammonium salt red light material. Additionally, Context_4 discusses a green preparation method for Mn (IV) doped fluoride red fluorescence powder, where KMnO4 is involved in the reaction process. By following these methods, which involve KMnO4 and other specific compounds, it is possible to create transparent to red materials with manganese doping, suitable for various applications requiring red light emission.What type of PDMS is used in Nanoimprint lithography?

Polydimethylsiloxane (PDMS) is extensively utilized in various lithography techniques due to its unique properties. In Nanoimprint lithography, room-temperature curing nanoimprint lithography (RTC-NIL) employs PDMS molds for patterning diamond-like carbon (DLC) emitters. The PDMS used in this process is fabricated under specific conditions, including a first curing time at room temperature for 36 hours and a second curing time at 150°C for 15 minutes, ensuring optimal mold quality. Additionally, microcontact printing techniques in lithography utilize PDMS embossing tools for creating micro and nanoscale patterns. These methods highlight the versatility and effectiveness of PDMS in lithography applications, showcasing its significance in the fabrication of intricate structures for various technological and biological purposes.Why electrolyte deposition is a challenge for sofc?

Electrolyte deposition in Solid Oxide Fuel Cells (SOFCs) poses a challenge due to the need for advanced materials and technologies to achieve efficient operation at lower temperatures. Various methods like Electrophoretic Deposition (EPD) and Electrolytic Deposition (ELD) are utilized to form functional layers, but challenges persist. Lowering operating temperatures requires thin-film electrolyte membranes to reduce ohmic losses, necessitating the development of versatile technologies. Enhancing cathode performance is crucial for reducing Area Specific Resistances, with strategies including innovative materials and improved microstructures at the electrolyte/cathode interface. Challenges in SOFC fabrication include achieving high performance while maintaining cost-effectiveness, which demands overcoming obstacles like high sintering temperatures that can deteriorate layers and substrates. Overall, addressing these challenges is essential for advancing SOFC technology towards commercialization.Is there an article about a led-array with individually addressable electrodes?

Yes, there are multiple articles discussing LED arrays with individually addressable electrodes. One article presents a novel approach using GaN micro-light-emitting diodes (LEDs) with individually addressed n-electrodes, allowing for faster modulation and compatibility with NMOS transistor-based drivers. Another study introduces GaN-based micro-LED arrays with a reversed electrode structure, featuring a common p-electrode and individually addressable n-electrodes, enabling high-performance characteristics and compatibility with NMOS drivers for faster modulation. Additionally, a different research paper describes the fabrication of individually addressable GaN microdisk LED arrays, showcasing ultrahigh resolution and stable operation in free-standing and flexible forms. These articles collectively highlight advancements in LED array technology with individually addressable electrodes for various applications.Is there an article about a led-array with individually addressable cathodes and individually addressable anodes?

Yes, there are articles discussing LED arrays with individually addressable cathodes and individually addressable anodes. One study presents a novel inverted, vertical microdisplay prototype device with individually addressing cathodes, demonstrating the use of silicon-based vertical Micro-LEDs with this configuration. Another article showcases a GaN-based micro-LED array with a common p-electrode and individually addressable n-electrodes, designed for faster modulation and visible light communication applications. These innovative LED array designs offer improved performance characteristics, such as enhanced brightness, heat dissipation, and modulation bandwidth, making them suitable for high-resolution displays, wearables, and VR/AR headsets.How does bath temperature impact quality of aluminium?

The bath temperature significantly affects the quality of aluminum in various processes. Higher bath temperatures during anodization lead to increased optical absorption in Al2S3 films, with a decrease in optical band gap. In the case of electro-deposition of alumina films, higher bath temperatures result in thicker films, affecting pore characteristics such as surface coverage, pore area, and number of pores. Additionally, in aluminum anodization, films formed at low temperatures exhibit higher scratch hardness, while those formed at high temperatures and voltages are more corrosion-resistant. The reaction of cryolite bath with molten Al-Mg alloys also shows temperature dependence, with significant increases in Na and Ca concentrations in aluminum at higher temperatures. Therefore, controlling bath temperature is crucial for optimizing the quality and properties of aluminum products.Production of field effect transistors?

The production of field effect transistors involves several key steps outlined in the provided research contexts. These steps include depositing semiconductor material on a substrate, forming gate dielectric layers, arranging gate electrode layers, creating contact trenches, back-producing gate electrodes, forming source/drain regions, and connecting them with contact structures. Additionally, methods include depositing insulating films, refractory metal films, and gate metals, etching to define gate structures, and utilizing etching stopper layers to maintain film thickness. Furthermore, the process may entail depositing conducting and insulating materials on a temporary substrate before transferring them to the final substrate. Techniques like self-assembled monolayers and Schottky junctions are also employed to enhance transistor performance, reduce resistance, and improve reliability.