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These are the highest values ever reported for organic transistors.
To our knowledge these are the first In(GaAl)As hot electron transistors to exhibit 300 K gain of this magnitude.
The transistors exhibit high current gains over 200, which is comparable to those in transistors grown on InP substrates.
The fabricated transistors exhibit excellent I-V characteristics.
Vertical Organic Transistors are a novel technology that has the potential to overcome these limitations of OFETs.
Thus, this device is promising for highly scaled transistors.
Good mobility values are obtained for both architectures and we show the advantages of ultrathin body devices over bulk transistors.
Our study, for the first time, demonstrates that the 2DSC transistors can offer comparable performance to the 2017 target for silicon transistors in International Technology Roadmap for Semiconductors (ITRS), marking an important milestone in 2DSC electronics.