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How many transistors are in the Apple m1 chip?

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Breakdown voltage

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Field-effect transistor

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Papers (15)	Insight
Proceedings Article•DOI A Normally-off AlGaN/GaN Transistor with R on A=2.6mΩcm 2 and BV ds =640V Using Conductivity Modulation Yasuhiro Uemoto, Masahiro Hikita, Hiroaki Ueno, Hisayoshi Matsuo, Hidetoshi Ishida, Manabu Yanagihara, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda - Show less +8 more 01 Dec 2006 77 Citations	These values are the best ones ever reported for GaN-based normally-off transistors
Proceedings Article•DOI Variability in sub-100nm SRAM designs R. Heald, P. Wang - Show less +1 more 07 Nov 2004 131 Citations	Hence, the small transistors in SRAM cells are particularly sensitive to these variations.
Journal Article•DOI Planar silicon field-effect transistors with Langmuir-Blodgett gate insulators C.D. Fung, Grover L. Larkins - Show less +1 more 01 Oct 1985-Thin Solid Films	This allows the manufacture of many (in this case 11) IGFETs and associated test structures on a single chip with a large number of chips per wafer.
Journal Article•DOI Limits on Silicon Nanoelectronics for Terascale Integration James D. Meindl, Qiang Chen, Jeffrey A. Davis - Show less +2 more 14 Sep 2001-Science 355 Citations	Analysis of fundamental, material, device, circuit, and system limits reveals that silicon technology has an enormous remaining potential to achieve terascale integration (TSI) of more than 1 trillion transistors per chip.
Journal Article•DOI High-transconductance n-type Si/SiGe modulation-doped field-effect transistors Khalid EzzEldin Ismail, Bernard S. Meyerson, S. A. Rishton, Jack O. Chu, S. F. Nelson, J. J. Nocera - Show less +5 more 01 May 1992-IEEE Electron Device Letters 122 Citations	These values far exceed those found in Si MESFETs and are comparable to the best results achieved in GaAs/AlGaAs modulation-doped transistors.<<ETX>>
Proceedings Article•DOI Stacked gate dielectrics with TaO for future CMOS technologies I.C. Kizilyaili, P.K. Roy, Frieder H. Baumann, R.Y. Huang, D. Hwang, C. Chacon, R. Irwin, Y. Ma, G. Alers - Show less +8 more 09 Jun 1998 26 Citations	The fabricated transistors exhibit excellent I-V characteristics.
Journal Article•DOI Properties of MNOS structures K.I. Lundstrom, Christer Svensson - Show less +1 more 01 Jun 1972-IEEE Transactions on Electron Devices 136 Citations	These curves are useful in the design of MNOS-memory transistors.
Journal Article•DOI InP/InGaAs double-heterojunction bipolar transistors grown on [100] Si by metalorganic chemical vapor deposition Toshiki Makimoto, Kenji Kurishima, T. Kobayashi, T. Ishibashi - Show less +3 more 01 Jul 1991-IEEE Electron Device Letters	The transistors exhibit high current gains over 200, which is comparable to those in transistors grown on InP substrates.
Open access•Journal Article•DOI Branch effect reduction techniques Augustus K. Uht, V. Sindagi, S. Somanathan - Show less +2 more 01 May 1997-IEEE Computer 37 Citations	The hardware required for large scale exploitation is great, but the density of transistors per chip is increasing exponentially, with estimates of 50 to 100 million transistors per chip by the year 2000.
Open access•Proceedings Article•DOI Hardware support for code integrity in embedded processors Milena Milenkovic, Aleksandar Milenkovic, Emil Jovanov - Show less +2 more 24 Sep 2005 47 Citations	On the other hand, a further increase in the number of transistors on a single chip enables integrated hardware support for functions that formerly were restricted to the software domain.
Journal Article•DOI Radiation-Hard ZnO Thin Film Transistors J. Israel Ramirez, Yuanyuan V. Li, Hitesh A. Basantani, Kevin D. Leedy, Burhan Bayraktaroglu, Gregg H. Jessen, Thomas N. Jackson - Show less +6 more 01 May 2015-IEEE Transactions on Nuclear Science 27 Citations	To the best of our knowledge, these are the most radiation-hard thin film transistors reported to date.
Journal Article•DOI Transistor action in novel GaAs/W/GaAs structures G. E. Derkits, J. P. Harbison, J. Levkoff, D. M. Hwang - Show less +3 more 05 May 1986-Applied Physics Letters	These are the first reported metal gate transistors in the III‐V materials and the first using a nonepitaxial base and laterally seeded overgrowth.
Proceedings Article•DOI A complementary-pair of high-power MOSFET's Takeaki Okabe, I. Yoshida, Shikayuki Ochi, M. Nagata - Show less +3 more 01 Jan 1977	Measurement of these devices reveals superior thermal characteristic and assures a larger ASO than that of conventional bipolar transistors of the same chip size.
Proceedings Article•DOI Advanced simulation of statistical variability and reliability in nano CMOS transistors Asen Asenov, Scott Roy, R.A. Brown, Gareth Roy, Craig Alexander, Craig Riddet, Campbell Millar, Binjie Cheng, Antonio Martinez, Natalia Seoane, Dave Reid, Muhammad Faiz Bukhori, Xingsheng Wang, Urban Kovac - Show less +13 more 01 Jan 2008 39 Citations	Two transistors next to each other on the chip with exactly the same geometries and strain distributions may have characteristics from each end of a wide statistical distribution.
Open access•Journal Article•DOI A novel retina chip with simple wiring for edge extraction H. Ikeda, Kiyotaka Tsuji, Tetsuya Asai, Hiroo Yonezu, Jang-Kyoo Shin - Show less +4 more 01 Feb 1998-IEEE Photonics Technology Letters	The chip has a novel wiring structure in which all pixels are connected through the channel of MOS transistors, which simplifies a wiring structure compared with conventional resistive networks.

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