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The proposed new circuit for the XOR-XNOR module eliminates the weak logic on the internal nodes of pass transistors with a pair of feedback PMOS-NMOS transistors.
Proceedings ArticleDOI
Hung Tien Bui, A. Al-Sheraidah, Yuke Wang 
28 Aug 2000
80 Citations
The results show that the new XOR/XNOR gates consistently consume less power than any other XOR/XNOR gate known at the time of publication.
The proposed XOR and XNOR circuits are compared with previously known circuits and shown to provide superior performance.
It clearly exhibits the XNOR gate behavior and this aspect may be utilized in designing an electronic logic gate.
The proposed XOR/XNOR logic gate has a superb performance in terms of area, complexity, power consumption and cost function in comparison to some existing QCA-based XOR architectures.
Proceedings ArticleDOI
Trapti Sharma, Laxmi Kumre 
01 Oct 2017
3 Citations
Based on the intensive simulations, the XOR/XNOR designs with feedback transistors outperforms well in comparison to other previously existing circuits in terms of high speed, low power and output voltage without any logic degradation with high noise tolerance capability.
This paper proposes a novel memristor-based xnor gate that enables the execution of xnor/xor function in the memristive crossbar memory.
Proceedings ArticleDOI
Jiangmin Gu, Chip-Hong Chang 
25 May 2003
48 Citations
The new circuit structure eliminates the weak logic on internal nodes in the XOR-XNOR module in contrast to the published designs.
Proceedings ArticleDOI
Rajeev Kumar, Vimal Kant Pandey 
01 Dec 2011
11 Citations
Simulation results reveal that the proposed circuit exhibit lower power-delay product (PDP), more power efficient and faster than the best available XOR-XNOR circuit in literature.

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Why have Beyond von Neumann Computing (BvNC) architectures become a current topic in computer science?
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Beyond von Neumann Computing (BvNC) architectures have gained prominence in computer science due to the limitations of traditional computing architectures like von Neumann in handling the demands of modern applications such as deep learning, artificial intelligence, and constraint optimization. These novel architectures, including Hyper-dimensional Computing (HDC), integrated photonic platforms, and networks of weakly coupled oscillators, offer unique features like robustness, energy efficiency, and the ability to perform complex tasks with superior efficiency compared to traditional architectures. The shift towards BvNC architectures is driven by the need for improved performance, reduced energy consumption, and the capability to tackle computationally challenging problems that traditional architectures struggle with, making them a current focus of research and development in the field of computer science.
What are the impacts of distributed generation in medium voltage grids?
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The integration of distributed generation (DG) resources in medium voltage grids has significant impacts on grid operations and protection systems. DGs alter fault current behavior, necessitating active protection schemes to maintain system reliability. Voltage fluctuations due to DG connections can be mitigated through innovative control systems that adjust transformer ratios, manage reactive power, and control active power generation. Furthermore, the increasing penetration of renewable energy sources through DGs poses power quality challenges in medium voltage distribution systems, emphasizing the importance of proper inverter operation to avoid voltage distortion and network performance issues. To address protection challenges arising from inverter-interfaced distributed generators (IIDGs), novel virtual multi-terminal current differential protection schemes have been proposed, enhancing protection sensitivity and selectivity in medium voltage grids.
Why is transmission important in power system?
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Transmission is crucial in a power system due to several key reasons. Firstly, the transmission network plays a pivotal role in bridging energy generation and distribution, ensuring long-term and continuous energy transfer. Secondly, advancements in energy consumption patterns, including the increased use of renewables, necessitate efficient transmission systems to accommodate these changes. Additionally, the expansion of cross-border capacity and the integration of renewables anywhere on the grid require robust transmission infrastructure. Moreover, power transmission systems enable efficient power distribution through mechanisms like gear switching and torque generation, enhancing overall system efficiency. Furthermore, innovative power transmission systems can optimize voltage supply, monitor loads, and reduce power loss, contributing to system stability and performance.
How do transmission systems contribute to the efficiency and reliability of power systems?
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Transmission systems play a crucial role in enhancing the efficiency and reliability of power systems. They enable multi-gear speed changing, widening the torque and rotation speed working range of motors, thus improving overall system efficiency. Additionally, the transmission network, operating at high voltage levels, facilitates long-distance energy transfer, crucial for continuous and reliable power supply, especially with the increasing integration of renewable energy sources. Moreover, innovative power transmission systems incorporate mechanisms like synchronizing and clutch mechanisms to ensure constant power transmission during gear switches, enhancing system reliability. Furthermore, advanced power transmission distribution devices efficiently divide and distribute power to different loads, optimizing energy utilization and system reliability. Overall, these advancements in transmission systems contribute significantly to the efficiency and reliability of modern power systems.
Why sram variation is better than logic device?
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SRAM variation is considered better than logic device variation due to its impact on performance and design margins. SRAM circuits exhibit improved performance and design robustness in the presence of variation effects, especially in technologies like TFET where SRAM bitcells match low logic supply voltages, leading to higher efficiency and retention margins compared to MOSFET. Additionally, the correlation among logic and SRAM devices plays a crucial role in setting design margins and optimizing performance, making SRAM variation management critical for overall circuit reliability and efficiency. These findings highlight the significance of understanding and leveraging SRAM variation to enhance circuit performance and reliability in advanced technologies.
How does the bidirectional ripple-free resonant converter?
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The bidirectional ripple-free resonant converter achieves minimal ripple by utilizing resonant structures and advanced control methods. It eliminates input-current ripple theoretically, reduces double line frequency ripple in the charging stage by 70% through adaptive frequency modulation and feed-forward control, maintains zero current ripple on the battery side with two-phase interleaving technology, and achieves almost zero-voltage switching to minimize switching losses over a wide voltage gain range. These converters employ various techniques such as resonant tank design, soft-switching characteristics, and bidirectional switch integration to ensure efficient and smooth power transfer in both charging and discharging stages, making them suitable for battery applications.
How has the ITC distribution network evolved over the past decade, and what factors have contributed to these changes?
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The ITC distribution network has evolved significantly over the past decade due to various factors. The rise of renewable electricity generation, electrification of heating and transportation, and the increasing role of ICT have necessitated changes in distribution networks. Additionally, the move towards 'Net Zero' and the deployment of low carbon technologies have increased the complexity of managing distribution networks, leading to the evolution of Distribution Network Operators into Distribution System Operators. Furthermore, the distribution process in the FMCG sector, where ITC operates, requires constant revision of schemes and offers to meet market demands and consumer preferences. These factors collectively have driven the transformation of the ITC distribution network to adapt to changing market conditions and technological advancements.
What are the materials used in semiconductors gas sensors?
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Gas sensors based on semiconductors utilize a variety of materials for their operation. These materials include semiconductor metal-oxides (MOX), polymers, carbon nanotubes, 2D materials, metal-organic frameworks (MOFs), MXenes, graphitic carbon nitride (g-C3N4), hexagonal boron nitride (h-BN), group III-VI semiconductors, phosphorene, black phosphorus, metal ferrites, high entropy oxides, Si, Ge, III-V semiconductors, and carbon-based materials such as graphene and 2D transition metal dichalcogenides (TMDs). These materials are chosen based on their electrical, optical, and mechanical properties, as well as their compatibility with the fabrication processes used in the microelectronics industry. The selection of the appropriate material is crucial for optimizing the gas-sensing performance of the sensor.
Area of not gate in 45nm technology
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The abstracts provided do not contain specific information about the area of a NOT gate in 45nm technology.
What is 0.5 at mAP?
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0.5 at mAP refers to a metric called mean Average Precision (mAP) with a value of 0.5. The mAP is commonly used to evaluate the performance of object detection algorithms. It measures the accuracy and robustness of the algorithm in detecting objects in an image or video. A higher mAP value indicates better performance. The specific context or application of the 0.5 mAP is not provided in the abstracts given.
How to reduce leakage current in SRAM?
5 answers
To reduce leakage current in SRAM, several techniques can be employed. One approach is the use of low-Vt (threshold voltage) transistors in combination with high-Vt transistors, such as in Multi-Threshold CMOS (MTCMOS) and Variable-Threshold CMOS (VTCMOS) designs. Another technique is the implementation of a leakage-controlled transistor (lector) structure, which includes two leakage-controlled transistors connected within the logic gate. These transistors act near their cut-off mode, reducing leakage current. Additionally, the DTMOS technique can be used to reduce effective leakage currents and dynamic power dissipation in SRAM cells. Another proposed method is the use of an Ultra8T SRAM design, which employs a leakage detection strategy to aggressively reduce the lowest possible voltage (VDDMIN) and minimize leakage current. These techniques aim to address the challenge of leakage current in SRAM and improve power efficiency in energy-constrained scenarios.