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How many transistors does a Iphone 13 have?

Heterostructure-emitter bipolar transistor

Quantum tunnelling

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Proceedings Article•DOI Stacked gate dielectrics with TaO for future CMOS technologies I.C. Kizilyaili, P.K. Roy, Frieder H. Baumann, R.Y. Huang, D. Hwang, C. Chacon, R. Irwin, Y. Ma, G. Alers - Show less +8 more 09 Jun 1998 26 Citations	The fabricated transistors exhibit excellent I-V characteristics.
Proceedings Article•DOI Silicon Single-electron Devices for Logic Applications Y. Takahashi 24 Sep 2002 19 Citations	In addition, SETs have two unique features that conventional transistors do not have.
Journal Article•DOI A tunneling field-effect transistor with 25 nm metallurgical channel length Fu-Cheng Wang, W. E. Zhang, C. H. Yang, M. J. Yang, Brian R. Bennett, R. A. Wilson, D. R. Stone - Show less +6 more 02 Jun 1997-Applied Physics Letters 9 Citations	The results demonstrate a new scheme of building nanometer-scale transistors.
Journal Article•DOI A bipolar 2500-gate subnanosecond masterslice LSI Masao Nakaya, S. Kato, K. Tsukamoto, H. Sakurai, T. Kondo, Yasutaka Horiba - Show less +5 more 01 Oct 1981 12 Citations	A new cell composed of a pair of adjacent gates provides high utilization of input transistors.
Proceedings Article•DOI A 27 GHz 20 ps PNP technology James D. Warnock, Pong-Fei Lu, T.-C. Chen, K.-Y. Toh, John D. Cressler, Keith A. Jenkins, Denny D. Tang, Joachim N. Burghartz, J.Y.-C. Sun, Ching-Te Chuang, Guann-Pyng Li, Tak H. Ning - Show less +11 more 03 Dec 1989 22 Citations	The devices have a measured cutoff frequency of 27 GHz, making them the fastest silicon p-n-p bipolar transistors reported to date.
Open access•Journal Article•DOI Single-electron transistors with wide operating temperature range Christian Dubuc, Jacques Beauvais, Dominique Drouin - Show less +2 more 12 Mar 2007-Applied Physics Letters 33 Citations	It is found that single electron devices can have an operating temperature range similar to conventional silicon transistors, opening the door to hybrid designs.

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