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How many transistors does a motherboard have?

Pass transistor logic

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Proceedings Article•DOI Silicon single-electron devices and their applications Yasuo Takahashi, A. Fujiwara, Yukinori Ono, Katsumi Murase - Show less +3 more 23 May 2000 50 Citations	In addition, SETs have two unique features that conventional transistors do not have: multi-gate capability and conductance that oscillates as a function of gate voltage.
Journal Article•DOI Application of Highly-Doped Si Single-Electron Transistors to an Exclusive-NOR Operation Tetsuya Kitade, Anri Nakajima - Show less +1 more 05 Mar 2004-Japanese Journal of Applied Physics 7 Citations	Using our SET with multiple gates reduces the number of required transistors for the logic circuit compared with using conventional complementary metal-oxide-semiconductor (CMOS) transistors.
Proceedings Article•DOI Silicon Single-electron Devices for Logic Applications Y. Takahashi 24 Sep 2002 19 Citations	In addition, SETs have two unique features that conventional transistors do not have.
Journal Article•DOI A bipolar 2500-gate subnanosecond masterslice LSI Masao Nakaya, S. Kato, K. Tsukamoto, H. Sakurai, T. Kondo, Yasutaka Horiba - Show less +5 more 01 Oct 1981 12 Citations	A new cell composed of a pair of adjacent gates provides high utilization of input transistors.
Proceedings Article•DOI Evolutionary design of polymorphic gates using ambipolar transistors Jan Nevoral, Richard Ruzicka, Vojtech Mrazek - Show less +2 more 01 Dec 2016 5 Citations	They seem to have the best parameters among currently known polymorphic gates based on conventional transistors.
Proceedings Article•DOI Advanced simulation of statistical variability and reliability in nano CMOS transistors Asen Asenov, Scott Roy, R.A. Brown, Gareth Roy, Craig Alexander, Craig Riddet, Campbell Millar, Binjie Cheng, Antonio Martinez, Natalia Seoane, Dave Reid, Muhammad Faiz Bukhori, Xingsheng Wang, Urban Kovac - Show less +13 more 01 Jan 2008 39 Citations	Two transistors next to each other on the chip with exactly the same geometries and strain distributions may have characteristics from each end of a wide statistical distribution.
Journal Article•DOI Gate dielectric reliability and instability in GaN metal-insulator-semiconductor high-electron-mobility transistors for power electronics Jesus A. del Alamo, Alex Guo, Shireen Warnock - Show less +2 more 28 Sep 2017-Journal of Materials Research 14 Citations	Our findings paint a picture of BTI and TDDB that in many respects is similar to that of Si transistors but with some unique characteristics.
Proceedings Article•DOI Analysis of the electromagnetic radiation behaviour of motherboard-subboard structures M. Valek, M. Leone, F. Schmiedl - Show less +2 more 21 Jun 2005 14 Citations	A detailed investigation of the radiation behaviour of motherboard-subboard structures leads to the conclusion that with a suitable pin configuration of the interboard connector the field emission can be considerably reduced.

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