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How many transistors does a RTX 3070 have?

Bipolar junction transistor

Electronic design automation

Physical design

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Book Chapter•DOI Design Tools and Methods for Chip Physical Design Ricardo Reis 01 Jan 2011 1 Citations	This allows a reduction in the number of needed transistors to implement a circuit.
Proceedings Article•DOI Physical design automation at transistor level Ricardo Reis 25 Mar 2008 7 Citations	This allows a reduction on the number of needed transistors to implement a circuit.
Journal Article•DOI Very high-mobility organic single-crystal transistors with in-crystal conduction channels Jun Takeya, Masakazu Yamagishi, Y. Tominari, R. Hirahara, Yasuhiro Nakazawa, Takeshi Nishikawa, T. Kawase, Tatsuya Shimoda, S. Ogawa - Show less +8 more 09 Mar 2007-Applied Physics Letters 666 Citations	These are the highest values ever reported for organic transistors.
Journal Article•DOI Influence of Field-Plate Configuration on Power Dissipation and Temperature Profiles in AlGaN/GaN on Silicon HEMTs Vice Sodan, Herman Oprins, Steve Stoffels, Martine Baelmans, Ingrid De Wolf - Show less +4 more 29 Jun 2015-IEEE Transactions on Electron Devices 31 Citations	Consequently, their design is important for a good thermal behavior and reliability of the transistors.
Proceedings Article•DOI A 27 GHz 20 ps PNP technology James D. Warnock, Pong-Fei Lu, T.-C. Chen, K.-Y. Toh, John D. Cressler, Keith A. Jenkins, Denny D. Tang, Joachim N. Burghartz, J.Y.-C. Sun, Ching-Te Chuang, Guann-Pyng Li, Tak H. Ning - Show less +11 more 03 Dec 1989 22 Citations	The devices have a measured cutoff frequency of 27 GHz, making them the fastest silicon p-n-p bipolar transistors reported to date.
Journal Article•DOI Quantum functional devices: resonant-tunneling transistors, circuits with reduced complexity, and multiple valued logic Federico Capasso, Susanta Sen, Fabio Beltram, Leda Lunardi, A. S. Vengurlekar, P.R. Smith, Nitin J. Shah, Roger J. Malik, A.Y. Cho - Show less +8 more 01 Oct 1989-IEEE Transactions on Electron Devices 214 Citations	It is shown that RTBTs allow the implementation of many analog and digital circuit functions with a greatly reduced number of transistors and show considerable promise for multiple-valued logic.
Open access•Journal Article•DOI Single-electron transistors with wide operating temperature range Christian Dubuc, Jacques Beauvais, Dominique Drouin - Show less +2 more 12 Mar 2007-Applied Physics Letters 33 Citations	It is found that single electron devices can have an operating temperature range similar to conventional silicon transistors, opening the door to hybrid designs.
Journal Article•DOI Gate dielectric reliability and instability in GaN metal-insulator-semiconductor high-electron-mobility transistors for power electronics Jesus A. del Alamo, Alex Guo, Shireen Warnock - Show less +2 more 28 Sep 2017-Journal of Materials Research 14 Citations	Our findings paint a picture of BTI and TDDB that in many respects is similar to that of Si transistors but with some unique characteristics.

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