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How many transistors does a Ryzen 9 5900x have?

Negative-bias temperature instability

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Proceedings Article•DOI Physical design automation at transistor level Ricardo Reis 25 Mar 2008 7 Citations	This allows a reduction on the number of needed transistors to implement a circuit.
Journal Article•DOI A tunneling field-effect transistor with 25 nm metallurgical channel length Fu-Cheng Wang, W. E. Zhang, C. H. Yang, M. J. Yang, Brian R. Bennett, R. A. Wilson, D. R. Stone - Show less +6 more 02 Jun 1997-Applied Physics Letters 9 Citations	The results demonstrate a new scheme of building nanometer-scale transistors.
Open access•Journal Article•DOI Efficient CNTFET-based Ternary Full Adder Cells for Nanoelectronics Mohammad Hossein Moaiyeri, Reza Faghih Mirzaee, Keivan Navi, Omid Hashemipour - Show less +3 more 19 Apr 2011-Nano-micro Letters 70 Citations	The proposed structures reduce the number of the transistors considerably and have very high driving capability.
Journal Article•DOI Influence of Field-Plate Configuration on Power Dissipation and Temperature Profiles in AlGaN/GaN on Silicon HEMTs Vice Sodan, Herman Oprins, Steve Stoffels, Martine Baelmans, Ingrid De Wolf - Show less +4 more 29 Jun 2015-IEEE Transactions on Electron Devices 31 Citations	Consequently, their design is important for a good thermal behavior and reliability of the transistors.
Journal Article•DOI A bipolar 2500-gate subnanosecond masterslice LSI Masao Nakaya, S. Kato, K. Tsukamoto, H. Sakurai, T. Kondo, Yasutaka Horiba - Show less +5 more 01 Oct 1981 12 Citations	A new cell composed of a pair of adjacent gates provides high utilization of input transistors.
Proceedings Article•DOI Advanced simulation of statistical variability and reliability in nano CMOS transistors Asen Asenov, Scott Roy, R.A. Brown, Gareth Roy, Craig Alexander, Craig Riddet, Campbell Millar, Binjie Cheng, Antonio Martinez, Natalia Seoane, Dave Reid, Muhammad Faiz Bukhori, Xingsheng Wang, Urban Kovac - Show less +13 more 01 Jan 2008 39 Citations	Two transistors next to each other on the chip with exactly the same geometries and strain distributions may have characteristics from each end of a wide statistical distribution.
Open access•Journal Article•DOI Are spin junction transistors suitable for signal processing Supriyo Bandyopadhyay, Marc Cahay - Show less +1 more 12 Oct 2004-arXiv: Mesoscale and Nanoscale Physics 1 Citations	Here, we show that some of these transistors unfortunately may not have sufficient voltage and current gains for signal processing.
Journal Article•DOI Gate dielectric reliability and instability in GaN metal-insulator-semiconductor high-electron-mobility transistors for power electronics Jesus A. del Alamo, Alex Guo, Shireen Warnock - Show less +2 more 28 Sep 2017-Journal of Materials Research 14 Citations	Our findings paint a picture of BTI and TDDB that in many respects is similar to that of Si transistors but with some unique characteristics.

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