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How many transistors does an inverter have? 

Inverter
Ambipolar diffusion
Thin-film transistor
Field-effect transistor
Transistor

Answers from top 10 papers

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Papers (10)Insight
Journal Article•DOI
Design and implementation of a novel three-phase cascaded half-bridge inverter
Mubashwar Hasan, Ahmed Abu-Siada, Md. Rabiul Islam 
01 Jun 2016-Iet Power Electronics
22 Citations
insulated gate bipolar transistors and diodes when compared with the existing MLI topologies, which significantly reduces the size and cost of the inverter.
Open access•Journal Article•DOI
Efficient CNTFET-based Ternary Full Adder Cells for Nanoelectronics
Mohammad Hossein Moaiyeri, Reza Faghih Mirzaee, Keivan Navi, Omid Hashemipour 
19 Apr 2011-Nano-micro Letters
70 Citations
The proposed structures reduce the number of the transistors considerably and have very high driving capability.
Journal Article•DOI
Minimization of the Power Losses in IGBT Multiphase Inverters with Carrier-Based Pulsewidth Modulation
Luca Zarri, Michele Mengoni, Angelo Tani, Giovanni Serra, Domenico Casadei 
08 Feb 2010-IEEE Transactions on Industrial Electronics
49 Citations
If the switching devices of the inverter are insulated-gate bipolar transistors or bipolar junction transistors, this modulation strategy turns out to be the one with the minimum total power losses.
Journal Article•DOI
Top-Split-Gate Ambipolar Organic Thin-Film Transistors
Hocheon Yoo, Seon Baek Lee, Dongkyu Lee, Edsger C. P. Smits, Gerwin H. Gelinck, Kilwon Cho, Jae-Joon Kim 
01 May 2018-Advanced electronic materials
16 Citations
A split-gate device structure enables ambipolar transistors operating in a controlled unipolar mode (both p-type and n-type), resulting in superior inverter characteristics.
Proceedings Article•DOI
Quasi-Y-source inverter
Yam P. Siwakoti, Frede Blaabjerg, Poh Chiang Loh 
12 Nov 2015
25 Citations
Simulations and experimental results have proved the validity of the proposed inverter.
Journal Article•DOI
Vertical organic inverter with stacked pentacene thin film transistors
Changhoon Baek, Soonmin Seo 
16 Apr 2009-Applied Physics Letters
29 Citations
Utilization of two different dielectrics enables each of the two transistors to behave as a drive and load transistor for the inverter.
Journal Article•DOI
Analog/RF performance of L- and U-shaped channel tunneling field-effect transistors and their application as digital inverters
Wang Qianqiong, Shulong Wang, Hongxia Liu, Wei Li, Shupeng Chen 
17 May 2017-Japanese Journal of Applied Physics
19 Citations
And the calculated results demonstrate LTFET is more optimization for inverter circuit design in the novel generation transistors.
Proceedings Article•DOI
A neural-network-based space vector PWM of a five-level voltage-fed inverter
N.P. Filho, João Onofre Pereira Pinto, Bimal K. Bose 
01 Nov 2004
17 Citations
The principle described in the paper can be easily extended to an inverter with higher number of levels.
Journal Article•DOI
High-Mobility, Heterostructure Light-Emitting Transistors and Complementary Inverters
Mujeeb Ullah, Kristen Tandy, Jun Li, Zugui Shi, Paul L. Burn, Paul Meredith, Ebinazar B. Namdas 
01 Oct 2014-ACS Photonics
21 Citations
We have also demonstrated a light-emitting inverter by combining two LEFETs into the inverter architecture.
Open access•Journal Article•DOI
N-Type Self-Assembled Monolayer Field-Effect Transistors and Complementary Inverters
Andreas Ringk, Xiaoran Li, Fatemeh Gholamrezaie, Ecp Edsger Smits, Alfred Neuhold, Armin Moser, Cees van der Marel, G Gerwin Gelinck, Roland Resel, Dago M. de Leeuw, Peter Strohriegl 
25 Apr 2013-Advanced Functional Materials
58 Citations
By implementing n-type and p-type transistors in one device, a complimentary inverter based solely on SAMFETs is demonstrated for the first time.

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