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This has an advantage of fabricating millions of transistors in a single chip IC.
The developed design strategy statistically sizes different transistors of the SRAM cell and optimizes the number of redundant columns to be used in the SRAM array, to minimize the failure probability of a memory chip under area and leakage constraints.
Moore’s law An observation that the number of transistors in an integrated circuit doubles every 18 to 24 months, doubling its performance.
Chip-multiprocessor (CMP) architectures are a promising design alternative to exploit the ever-increasing number of transistors that can be put on a die.
Using our SET with multiple gates reduces the number of required transistors for the logic circuit compared with using conventional complementary metal-oxide-semiconductor (CMOS) transistors.
In addition, SETs have two unique features that conventional transistors do not have.
They seem to have the best parameters among currently known polymorphic gates based on conventional transistors.
Proceedings ArticleDOI
Adi Fuchs, David Wentzlaff 
26 Mar 2019
33 Citations
Unfortunately, the stagnation of the number of transistors available on a chip will limit the accelerator design optimization space, leading to diminishing specialization returns, ultimately hitting an accelerator wall.
Among them is an effective way to reduce capacity of the clock load by minimizing number of clocked transistors.
The proposed structures reduce the number of the transistors considerably and have very high driving capability.
The chip has a novel wiring structure in which all pixels are connected through the channel of MOS transistors, which simplifies a wiring structure compared with conventional resistive networks.
The devices have a measured cutoff frequency of 27 GHz, making them the fastest silicon p-n-p bipolar transistors reported to date.
The transistors demonstrated here show an average 60% gm improvement over devices fabricated through conventional techniques.
The results indicate that the post-CMOS-MEMS processing does not degrade the performance of the transistors.
These promising results indicate that the GIZO thin film transistors could be a candidate for selection transistors in 3-D cross point stacking memory.

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What is the number of studies on memcapacitor emulator in the literature?
5 answers
There are five studies on memcapacitor emulators in the literature. These studies propose innovative designs for memcapacitor emulators using various components such as current feedback amplifiers, analog multipliers, resistors, and capacitors. The emulators are designed to operate at high frequencies, exhibit non-volatility behavior, and are robust against mismatch and process variations. Additionally, the studies demonstrate the expandability of memcapacitor circuits using memristors and mutators, enabling the construction of complex circuit configurations. The proposed emulators have been validated through simulations, experimental verifications, and post-layout analyses, showcasing their efficiency, low power consumption, and applicability in practical applications like neuromorphic computing.
How nitride film or oxide film which under the gate flate plate of GaN affect the TDDB?
5 answers
The nitride or oxide film under the gate flat plate of GaN significantly impacts Time-Dependent Dielectric Breakdown (TDDB) characteristics. Research on GaN Metal-Insulator-Semiconductor Field-Effect Transistors (MIS-FETs) with Al2O3 gate dielectric demonstrates stable forward gate bias TDDB behavior, showcasing enhanced E-mode characteristics and low gate leakage, with no breakdown observed up to 15V at room temperature. Additionally, investigations on AlGaN/GaN MIS-HEMTs reveal TDDB concerns in the OFF state, emphasizing the necessity to consider trapping effects for accurate breakdown voltage estimation. Furthermore, a proposed TDDB testing device for gate oxide layers in integrated circuits offers a method to determine breakdown field strength, acceleration factors, and service life calculations based on breakdown time and field strength data.
How transparent oxides can be used as gate dielectric?
5 answers
Transparent oxides can be utilized as gate dielectrics in various applications. For instance, in the study by Alshammari et al., a novel process was developed to fabricate thin film transistors (TFTs) using a binary oxide, Hf x Zn1- x O2- δ (HZO), for all transistor layers, including the gate and dielectric layers. This approach allowed for tuning the electronic properties of the oxide from conducting to insulating by adjusting the chemical precursors' flow ratio. Additionally, the work by ViolBarbosa et al. demonstrated that ionic liquid gating can induce a metallic phase in insulating films of WO3, altering the material's conductivity while maintaining transparency in the visible range. These studies highlight the versatility of transparent oxides in serving as gate dielectrics with tunable electronic properties for various electronic devices.
How to desgine a elcteic circut for constant current?
5 answers
To design an electric circuit for constant current, several key components and configurations can be considered based on the information provided in the research papers. One approach involves utilizing a current mirror circuit with transistors of different conductivity types connected to power supplies. Another method involves employing depletion-type NMOS transistors in parallel with resistance elements to achieve a stable constant current output. Additionally, incorporating a control module with a voltage regulation unit and a signal processing module can enable the adjustment and regulation of the output current in the circuit. Furthermore, integrating diodes, resistors, and variable resistance elements in current mirror configurations with feedback units can help control and maintain a constant current flow in the circuit. By combining these elements and configurations, a comprehensive and functional constant current circuit can be designed.
What are the specific challenges that students face when learning digital circuits?
5 answers
Students face specific challenges when learning digital circuits, including the fear of errors in practical implementation, the need to adapt skills to rapid technological advancements, lack of interest in hardware-related courses, and constraints in online learning processes.These challenges highlight the importance of bridging theoretical knowledge with practical applications through simulation, reducing system size and energy consumption, increasing talent pools, and enhancing engagement experiences in digital learning. Overcoming these obstacles requires innovative teaching methods like structured inquiry-based learning, aligning course outcomes with program outcomes, and incorporating hands-on experiences and project-based learning to improve students' knowledge, creativity, and practical thinking in the field of digital circuits.
What is the difference between constant voltage and constant current in gel electrophoresis?
5 answers
In the context of gel electrophoresis, the difference between constant voltage and constant current lies in their control mechanisms and adaptability. Constant current control in microchip electrophoresis directly indicates the velocity of the electroosmotic flow (EOF), making it more convenient than constant voltage control. Constant voltage electromigration testing offers advantages over constant current testing for materials with varying geometries, while the benefits are minimal for properly produced materials. A constant current circuit with high breakdown-voltage transistors is designed for high voltage circuits with low manufacturing costs. Additionally, a constant current constant voltage circuit stabilizes voltage and controls levels effectively, featuring strong anti-interference capabilities. These findings highlight the nuanced differences and applications of constant voltage and constant current in gel electrophoresis.
Is there an article about a led-array with individually addressable electrodes?
5 answers
Yes, there are multiple articles discussing LED arrays with individually addressable electrodes. One article presents a novel approach using GaN micro-light-emitting diodes (LEDs) with individually addressed n-electrodes, allowing for faster modulation and compatibility with NMOS transistor-based drivers. Another study introduces GaN-based micro-LED arrays with a reversed electrode structure, featuring a common p-electrode and individually addressable n-electrodes, enabling high-performance characteristics and compatibility with NMOS drivers for faster modulation. Additionally, a different research paper describes the fabrication of individually addressable GaN microdisk LED arrays, showcasing ultrahigh resolution and stable operation in free-standing and flexible forms. These articles collectively highlight advancements in LED array technology with individually addressable electrodes for various applications.
Is there an article about a led-array with individually addressable cathodes and individually addressable anodes?
5 answers
Yes, there are articles discussing LED arrays with individually addressable cathodes and individually addressable anodes. One study presents a novel inverted, vertical microdisplay prototype device with individually addressing cathodes, demonstrating the use of silicon-based vertical Micro-LEDs with this configuration. Another article showcases a GaN-based micro-LED array with a common p-electrode and individually addressable n-electrodes, designed for faster modulation and visible light communication applications. These innovative LED array designs offer improved performance characteristics, such as enhanced brightness, heat dissipation, and modulation bandwidth, making them suitable for high-resolution displays, wearables, and VR/AR headsets.
How does ecmo affect in NSE level?
5 answers
Extracorporeal membrane oxygenation (ECMO) therapy can impact neuron-specific enolase (NSE) levels, which are used as a prognostic marker for neurological outcomes in patients undergoing ECMO. Studies have shown that NSE levels decrease significantly in patients with favorable neurological outcomes compared to those with unfavorable outcomes after ECMO therapy. Additionally, high NSE serum levels post-ECMO correlate with poor neurological outcomes and increased mortality, indicating the importance of early neuroimaging for treatment decisions in these patients. Furthermore, ECMO treatment can induce immune inflammatory responses in cerebral tissues, although the extent may not be sufficient to cause significant neurological impairment in all cases. Overall, understanding the relationship between ECMO and NSE levels is crucial for accurate prognostic assessment and clinical decision-making in patients undergoing ECMO therapy.
Production of field effect transistors?
4 answers
The production of field effect transistors involves several key steps outlined in the provided research contexts. These steps include depositing semiconductor material on a substrate, forming gate dielectric layers, arranging gate electrode layers, creating contact trenches, back-producing gate electrodes, forming source/drain regions, and connecting them with contact structures. Additionally, methods include depositing insulating films, refractory metal films, and gate metals, etching to define gate structures, and utilizing etching stopper layers to maintain film thickness. Furthermore, the process may entail depositing conducting and insulating materials on a temporary substrate before transferring them to the final substrate. Techniques like self-assembled monolayers and Schottky junctions are also employed to enhance transistor performance, reduce resistance, and improve reliability.
What are the common fabrication steps used in the production of bipolar junction transistors?
5 answers
The common fabrication steps in producing bipolar junction transistors involve several key processes. These include implantation procedures to form different regions with varying dopant concentrations, creating extrinsic collector and base regions buried in the semiconductor substrate, forming surface-doped regions and insulating layers on the semiconductor substrate, and patterning photoresists to define openings for implantation processes with varying dopant concentrations. Additionally, steps such as forming well regions with different concentrations in the base and emitter regions, defining trenches and openings for silicon and silicon-germanium regions, and establishing a composite base region with specific dopant concentration levels are crucial in the fabrication process of bipolar junction transistors.