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How many transistors does Iphone X have? 

CMOS
Integrated circuit design
Transistor
Electron-beam lithography
X-parameters

Answers from top 8 papers

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Papers (8)Insight
Journal Article•DOI
Fabrication of Ballistic Quantum Wires and Their Transport Properties
Yukihiko Takagaki, Fujio Wakaya, Sadao Takaoka, Kenji Gamo, Kazuo Murase, Susumu Namba 
20 Oct 1989-Japanese Journal of Applied Physics
15 Citations
We propose new side-gate transistors.
Proceedings Article•DOI
Stacked gate dielectrics with TaO for future CMOS technologies
I.C. Kizilyaili, P.K. Roy, Frieder H. Baumann, R.Y. Huang, D. Hwang, C. Chacon, R. Irwin, Y. Ma, G. Alers 
09 Jun 1998
26 Citations
The fabricated transistors exhibit excellent I-V characteristics.
Open access•Journal Article•DOI
Single-electron transistors with wide operating temperature range
Christian Dubuc, Jacques Beauvais, Dominique Drouin 
12 Mar 2007-Applied Physics Letters
33 Citations
It is found that single electron devices can have an operating temperature range similar to conventional silicon transistors, opening the door to hybrid designs.
Open access•Journal Article•DOI
Fabrication and electrical properties of MoS2 nanodisc-based back-gated field effect transistors.
Weixia Gu, Jiaoyan Shen, Xiying Ma 
28 Feb 2014-Nanoscale Research Letters
18 Citations
Furthermore, the transistors have good output characteristics and can be easily modulated by the back gate.
Proceedings Article•DOI
Load-pull + NVNA = enhanced X-parameters for PA designs with high mismatch and technology-independent large-signal device models
G. Simpson, Jason Horn, D. Gunyan, David E. Root 
01 Dec 2008
87 Citations
This capability extends the applicability of measurement-based X-parameters to highly mismatched environments, such as high-power and multi-stage amplifiers, and power transistors designed to work far from 50 ohms.
Journal Article•DOI
Ultra low-voltage low-power CMOS 4-2 and 5-2 compressors for fast arithmetic circuits
Chip-Hong Chang, Jiangmin Gu, Mingyan Zhang 
18 Oct 2004-IEEE Transactions on Circuits and Systems I-regular Papers
349 Citations
The proposed new circuit for the XOR-XNOR module eliminates the weak logic on the internal nodes of pass transistors with a pair of feedback PMOS-NMOS transistors.
Proceedings Article•DOI
Compact and behavioral modeling of transistors from NVNA measurements: New flows and future trends
David E. Root, Jianjun Xu, F. Sischka, Mihai Marcu, Jason Horn, Radoslaw M. Biernacki, M. Iwamoto 
15 Oct 2012
10 Citations
Recent advances in X-parameter methods for transistors, including simple scalability with geometry, show early potential for useful device models, under certain conditions, without the requirement of specifying an internal topology or equivalent circuit at all.
Journal Article•DOI
Using a 10-keV X-Ray Source for Hardness Assurance
Daniel M. Fleetwood, R. W. Beegle, F.W. Sexton, P.S. Winokur, S. L. Miller, R.K. Treece, J.R. Schwank, R. V. Jones, P. J. McWhorter 
01 Jan 1986-IEEE Transactions on Nuclear Science
38 Citations
We also show that the radiation response of silicon-nitride based nonvolatile memory transistors can be evaluated equally as well with a 10-keV x-ray source as with a Co-60 source.

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