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How many transistors does m1 chip have? 

Bipolar junction transistor
Current injection technique
Subthreshold conduction
Transistor
Threshold voltage

Answers from top 9 papers

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Papers (9)Insight
Journal Article•DOI
InP/InGaAs double-heterojunction bipolar transistors grown on [100] Si by metalorganic chemical vapor deposition
Toshiki Makimoto, Kenji Kurishima, T. Kobayashi, T. Ishibashi 
01 Jul 1991-IEEE Electron Device Letters
16 Citations
The transistors exhibit high current gains over 200, which is comparable to those in transistors grown on InP substrates.
Open access•Journal Article•DOI
Efficient CNTFET-based Ternary Full Adder Cells for Nanoelectronics
Mohammad Hossein Moaiyeri, Reza Faghih Mirzaee, Keivan Navi, Omid Hashemipour 
19 Apr 2011-Nano-micro Letters
70 Citations
The proposed structures reduce the number of the transistors considerably and have very high driving capability.
Open access•Journal Article•DOI
A novel retina chip with simple wiring for edge extraction
H. Ikeda, Kiyotaka Tsuji, Tetsuya Asai, Hiroo Yonezu, Jang-Kyoo Shin 
01 Feb 1998-IEEE Photonics Technology Letters
25 Citations
The chip has a novel wiring structure in which all pixels are connected through the channel of MOS transistors, which simplifies a wiring structure compared with conventional resistive networks.
Proceedings Article•DOI
A complementary-pair of high-power MOSFET's
Takeaki Okabe, I. Yoshida, Shikayuki Ochi, M. Nagata 
01 Jan 1977
11 Citations
Measurement of these devices reveals superior thermal characteristic and assures a larger ASO than that of conventional bipolar transistors of the same chip size.
Journal Article•DOI
Very high-mobility organic single-crystal transistors with in-crystal conduction channels
Jun Takeya, Masakazu Yamagishi, Y. Tominari, R. Hirahara, Yasuhiro Nakazawa, Takeshi Nishikawa, T. Kawase, Tatsuya Shimoda, S. Ogawa 
09 Mar 2007-Applied Physics Letters
666 Citations
These are the highest values ever reported for organic transistors.
Journal Article•DOI
Growth of AlGaN/GaN/AlGaN double heterojunction field-effect transistors and the observation of a compositional pulling effect
Zijun Chen, Yi Pei, S. Newman, David F. Brown, Roy B. Chung, Sarah L. Keller, Steven P. DenBaars, Shuji Nakamura, Umesh Mishra 
01 May 2009-Applied Physics Letters
26 Citations
Thus, this device is promising for highly scaled transistors.
Proceedings Article•DOI
A 27 GHz 20 ps PNP technology
James D. Warnock, Pong-Fei Lu, T.-C. Chen, K.-Y. Toh, John D. Cressler, Keith A. Jenkins, Denny D. Tang, Joachim N. Burghartz, J.Y.-C. Sun, Ching-Te Chuang, Guann-Pyng Li, Tak H. Ning 
03 Dec 1989
22 Citations
The devices have a measured cutoff frequency of 27 GHz, making them the fastest silicon p-n-p bipolar transistors reported to date.
Journal Article•DOI
CMOS-SOI-MEMS Transistor for Uncooled IR Imaging
L. Gitelman, Sara Stolyarova, Sharon Bar-Lev, Z. Gutman, Y. Ochana, Yael Nemirovsky 
11 Aug 2009-IEEE Transactions on Electron Devices
67 Citations
The results indicate that the post-CMOS-MEMS processing does not degrade the performance of the transistors.
Journal Article•DOI
Short Channel Characteristics of Gallium–Indium–Zinc–Oxide Thin Film Transistors for Three-Dimensional Stacking Memory
Ihun Song, Sunil Kim, Huaxiang Yin, Chang Jung Kim, Jae-Chul Park, Sang-Wook Kim, Hyuk Soon Choi, Eunha Lee, Youngsoo Park 
20 May 2008-IEEE Electron Device Letters
99 Citations
These promising results indicate that the GIZO thin film transistors could be a candidate for selection transistors in 3-D cross point stacking memory.

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