How many transistors does Snapdragon 888 have?
Answers from top 20 papers
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Papers (20) | Insight |
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01 Jan 1982 907 Citations | Double-heterostructure (DH) transistors with both wide-gap emitters and collectors offer additional advantages. |
The accurate equivalent circuit will be helpful in designing transistors for more specialized applications. | |
04 Jul 2012 | Single Electron Transistors have the potential to be a very promising candidate for future computing architectures due to their low voltage operation and low power consumption. |
This paper describes how the unique properties of GaN enables a new generation of power transistors has the potential to reduce by at least an order of magnitude the cost, volume and losses of power electronic systems. | |
This may double the number of transistors needed to perform a given function, but it is an economical approach for monolithic IC's as active devices have a relatively low cost. | |
Using new chip architectures built on leading 7-nm process technology, the Snapdragon 855 will offer users long-lasting battery life and enhanced experiences in such areas as imaging, audio, gaming, and extended reality. | |
These are to the authors' knowledge the smallest polymer transistors reported. | |
01 Sep 2012 | These properties give SiC transistors low conduction losses and fast switching capability. |
The constraint of an even number of transistors is no longer necessary. | |
23 May 2000 50 Citations | In addition, SETs have two unique features that conventional transistors do not have: multi-gate capability and conductance that oscillates as a function of gate voltage. |
01 Jan 1973 44 Citations | This yields a simple and useful technique to determine N<inf>ss</inf>on MOS transistors. |
02 Dec 2001 | This is the highest f/sub T/ every reported for any bipolar transistors. |
66 Citations | This is the lowest reported to date for bipolar transistors. |
These technologies are indispensable for wide-spread use of GaN power switching transistors in the future. | |
24 Citations | Our results provide clues to better understand oxide transistors and to optimize their performance. |
These results are especially important for new generations of power switching transistors. | |
These are presently the highest values reported for silicon based transistors.<<ETX>> | |
666 Citations | These are the highest values ever reported for organic transistors. |
81 Citations | This f/sub t/ is the highest value ever reported for any transistors to date. |
01 Dec 2006 77 Citations | These values are the best ones ever reported for GaN-based normally-off transistors |