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Open accessJournal ArticleDOI
01 Jan 1982
907 Citations
Double-heterostructure (DH) transistors with both wide-gap emitters and collectors offer additional advantages.
The accurate equivalent circuit will be helpful in designing transistors for more specialized applications.
Single Electron Transistors have the potential to be a very promising candidate for future computing architectures due to their low voltage operation and low power consumption.
Open accessProceedings ArticleDOI
Bin Lu, Daniel Piedra, Tomas Palacios 
13 Dec 2010
This paper describes how the unique properties of GaN enables a new generation of power transistors has the potential to reduce by at least an order of magnitude the cost, volume and losses of power electronic systems.
This may double the number of transistors needed to perform a given function, but it is an economical approach for monolithic IC's as active devices have a relatively low cost.
Using new chip architectures built on leading 7-nm process technology, the Snapdragon 855 will offer users long-lasting battery life and enhanced experiences in such areas as imaging, audio, gaming, and extended reality.
These are to the authors' knowledge the smallest polymer transistors reported.
These properties give SiC transistors low conduction losses and fast switching capability.
The constraint of an even number of transistors is no longer necessary.
Proceedings ArticleDOI
23 May 2000
50 Citations
In addition, SETs have two unique features that conventional transistors do not have: multi-gate capability and conductance that oscillates as a function of gate voltage.
This yields a simple and useful technique to determine N<inf>ss</inf>on MOS transistors.
This is the highest f/sub T/ every reported for any bipolar transistors.
This is the lowest reported to date for bipolar transistors.
Proceedings ArticleDOI
21 Jun 2010
71 Citations
These technologies are indispensable for wide-spread use of GaN power switching transistors in the future.
Our results provide clues to better understand oxide transistors and to optimize their performance.
These results are especially important for new generations of power switching transistors.
These are presently the highest values reported for silicon based transistors.<<ETX>>
These are the highest values ever reported for organic transistors.
This f/sub t/ is the highest value ever reported for any transistors to date.
These values are the best ones ever reported for GaN-based normally-off transistors

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Time management of student council officers?
5 answers
Time management is crucial for student council officers, as it directly impacts their effectiveness in leadership. It involves viewing time as a valuable resource that must be managed to avoid wastage. An effective approach to time management can be facilitated through the use of specialized tools, such as an apparatus designed to help individuals manage their time efficiently. Additionally, the responsibilities of student council officers, which include decision-making, representation, negotiation, and budgeting, require strong time management skills to fulfill effectively. Therefore, student council officers should prioritize developing a proactive time management attitude to enhance their leadership capabilities and overall performance in their roles.
How does aging affect bipolar transistor parameters?
5 answers
Aging significantly impacts bipolar transistor parameters by inducing changes in various electrical characteristics. For SiGe HBTs, aging under different modes of operation like off-state and saturation leads to device degradation due to hot carrier generation, affecting reliability. Similarly, accelerated aging through thermo-electrical overstress alters switching parameters in Insulated Gate Bipolar Transistors (IGBTs), indicating the onset of failure. Monitoring aging in IGBTs is crucial for reliability assessment, with proposed real-time indicators like peak voltage across parasitic inductance showing promise as aging-sensitive parameters. Additionally, thermal accelerated aging tests on power RF N-LDMOS transistors reveal shifts in key parameters like threshold voltage and transconductance due to degradation processes, emphasizing the impact on device reliability.
How has the global solar photovoltaic (PV) market evolved over the past decade?
5 answers
The global solar photovoltaic (PV) market has undergone significant evolution over the past decade. China has emerged as a dominant player in the PV value chain, shifting the demand and supply dynamics from Western economies to Asia. The market has witnessed substantial growth, with installed PV capacity increasing from 135GW in 2013 to 480GW by the end of 2018, marking a 3.5 times growth in five years. This growth has been facilitated by advancements in technology, such as the development of high-efficiency cells like PERC and TOPCon, leading to improved efficiency and cost reductions in PV power generation. Additionally, the availability of financing options like third-party ownership (TPO) models has further fueled market expansion, enabling customers to adopt solar systems with little to no upfront costs.
How many transistors do Class A amplifiers use?
5 answers
Class A amplifiers use at least one transistor for amplification.
Area of not gate in 45nm technology
5 answers
The abstracts provided do not contain specific information about the area of a NOT gate in 45nm technology.
Can i detect the torque of perpendicular MTJ by stfmr?
4 answers
Yes, the torque of a perpendicular Magnetic Tunnel Junction (MTJ) can be detected using Spin-Torque Ferromagnetic Resonance (ST-FMR). ST-FMR is a technique that can be used to measure the efficiency of spin-orbit torques (SOTs) in spintronic devices. In the case of a perpendicular MTJ, the ST-FMR spectrum shows two resonance modes: in-plane and out-of-plane magnetization precession modes. By performing modulation of the damping measurement for these modes, the dampinglike torque efficiency can be determined. The obtained values of dampinglike torque efficiency are consistent with each other, indicating the effectiveness of ST-FMR measurements for determining the torque efficiency of a perpendicular MTJ.
How efficient is galium nitrite for data centers?
5 answers
Gallium nitride (GaN) power devices have been applied in data center power converters to improve efficiency. GaN devices were compared with silicon (Si) counterparts in an intermediate DC-DC bus converter, and GaN devices exhibited reduced device loss and the ability to reduce transformer winding loss. Scaled down prototypes of all power conversion stages in the data center power supply chain were designed, built, and tested, illustrating the advantages of utilizing wide band gap (WBG) power devices, including GaN, in increasing converter efficiency and power density. Therefore, GaN is an efficient option for data centers, as it helps to increase converter efficiency and power density.
What project i built in AI electronics?
5 answers
In the field of AI electronics, a project has been developed to diagnose Printed Circuit Boards (PCB) using an Automatic Optical Inspection (AOI) system. This system utilizes a neural network approach to classify visible defects on a SMT-PCB. Another project focuses on the commercialization of Organic and Large-area Electronics (OLAE) in Europe. The COLAE project aims to promote the commercial exploitation of OLAE technology, provide training and support services, and establish an OLAE feasibility network. Additionally, a project demonstrates the use of artificial intelligence (AI) for automatic online real-time optimization of a power electronics converter. This project utilizes a dual active bridge (DAB) converter and a deep deterministic policy gradient (DDPG) algorithm to achieve improved efficiency in power conversion and supply. Finally, a project aims to develop a new class of memory devices for AI applications. This project focuses on controlled incorporation of metal ions into the insulating layer of a Metal Oxide Semiconductor (MOS) transistor to create a low-energy, non-volatile, and neuromorphic memory device.
How does a temperature sensor work?
5 answers
A temperature sensor works by measuring the temperature of a specific location or apparatus. It does this by using various components and circuits. One approach is to use a temperature sensor circuit that includes two banks of bipolar transistors. These transistors are configured to produce voltages and currents that are dependent upon their temperature sensitivity. Another approach is to use a temperature sensor assembly with a set of wires and a thermistor connected to the wires by lead frames. The thermistor measures the temperature and sends the information through the wires. Additionally, a temperature sensor circuit can include a measuring resistor and a controllable voltage or current source. The source applies an adjustable input voltage to the measuring resistor, allowing for continuous adjustment of the input voltage. Another type of temperature sensor is equipped with a sensor element of electric wires connected to a thermal body. Finally, a temperature sensing device may include a sensor module and a thermostatic switch that controls the flow of electrical current to the sensor module.
What is the impact of using Zn drive-in on n-InP (100) substrate on the performance of semiconductor devices?
4 answers
The impact of using Zn drive-in on n-InP (100) substrate on the performance of semiconductor devices is investigated in several papers. It is shown that Zn diffusion during the epitaxy process can lead to severe performance degradation in InP-based Mach-Zehnder interferometer (MZI) modulators. InP surface degradation, such as macroscopic etch-pits and In hillocks, can occur during Zn diffusion, resulting in low device performance and fabrication yield. On the other hand, the n-ZnO/p-Si heterojunction structure shows good photonic performance when optimized parameters are used, such as a p-Si thickness of 250 μm, an acceptor concentration of 6 × 1015 cm−3, and a minority carrier lifetime of 10−3 s. Therefore, the impact of Zn drive-in on n-InP (100) substrate depends on the specific device and its optimization parameters.
What is the relationship between specific sheet resistance and MMIC circuit performance?
5 answers
The relationship between specific sheet resistance and MMIC circuit performance is discussed in several papers. Bansal et al. describe the design and analysis of thin film nichrome resistors for GaN MMICs, highlighting the importance of sheet resistance in achieving desired electrical performance. Mebane et al. found that the sheet resistance of thin-film electrodes can critically influence their electrocatalytic behavior, with higher resistance leading to more resistive behavior. Tsui et al. achieved a high-sheet-resistance polysilicon resistor for integrated circuits by using a two-layer polysilicon process, emphasizing the role of doped polysilicon layer thickness in increasing sheet resistance. Tahir et al. studied the effects of non-uniform emitter sheet resistance on the performance of PERC solar cells, finding that an increase in the difference between maximum and minimum sheet resistance values leads to a decrease in open-circuit voltage and efficiency. Torkhov et al. established a relation between the geometry of the thin-film metallic system surface and the sheet resistance, highlighting the importance of accurate calculation of sheet resistance values for designing discrete devices and integrated circuits.