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We report a very high performance 100 nm gate length CMOS transistor structure operating at 1.2-1.5 V. These transistors are incorporated in a 180 nm logic technology generation.
We believe these are the fastest transistors of their kind in the world.
The transistors exhibit high current gains over 200, which is comparable to those in transistors grown on InP substrates.
These are the highest values ever reported for organic transistors.
These results are especially important for new generations of power switching transistors.
Journal ArticleDOI
51 Citations
These are the fastest silicon transistors reported to date in terms of both fT and fmax figures.
In this paper, we arrive at a better trade-off between the two, by realizing a marginally increased speed performance through a small rise in the number of transistors.
This latter finding sets a limitation on the maximum spacer depth for the high performance bipolar transistors.
Journal ArticleDOI
Qin Zhang, Wei Zhao, Alan Seabaugh 
555 Citations
This formula is consistent with two recent reports of interband tunnel transistors, which show lower than 60-mV/dec subthreshold swings and provides two simple design principles for configuring these transistors.
Increasing the processing capacity allows searching within a larger design space using complex transistors models, yielding more accurate results.

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What are the current advancements in microwave absorbing materials for wireless communication applications?
5 answers
Current advancements in microwave absorbing materials for wireless communication applications include the development of various types of materials with enhanced properties. One-dimensional nanomaterials are being explored for their unique structures and high specific surface areas, showing promise for electromagnetic wave absorption applications. Conductive polymers and their composites are also gaining attention due to their potential for high-performance microwave absorption, with a focus on improving properties like porosity, conductivity, and specific surface area. Additionally, research on ferrite-based multicomponent composites is progressing to enhance the absorption capabilities of these materials, aiming for characteristics like wide bandwidth and lightweight structures. Furthermore, the use of metal/covalent organic frameworks heterostructures is being investigated to create materials with multiple interfaces and defect vacancies, leading to improved impedance matching and dissipation properties for efficient microwave absorption.
What is Energy Dispersive X-Ray Spectroscopy?
5 answers
Energy Dispersive X-Ray Spectroscopy (EDS) is a powerful technique for high-resolution inspection of layered semiconductors and two-dimensional materials. It involves using a scanning electron microscope equipped with a silicon drift detector to analyze the energy-dispersive X-rays emitted by a sample. Recent advancements in EDS technology have significantly improved its throughput and spectral resolution, enabling precise qualitative and quantitative chemical analysis in various scientific and industrial applications. EDS can achieve layer-resolving sensitivity for crystals down to the monolayer limit, allowing for elemental composition profiling in complex structures like heterobilayers. Additionally, EDS can be applied to other two-dimensional materials and van der Waals heterostructures, expanding its utility for characterizing layer number, atomic composition, and alloy gradients in atomically thin materials and devices.
What are the mechanistic understanding for photo (electro) catalytic nitrogen fixation?
5 answers
Photo (electro) catalytic nitrogen fixation mechanisms involve various strategies to enhance N2 reduction to NH3. One approach is the use of Cu single atoms on TiO2 nanosheets, which under light irradiation, improves electron transfer and surface charge accumulation on Cu sites, boosting NRR activity significantly. Another method includes constructing vertical heterostructures like WO3-MoS2, where the d-band center repositioning and synergistic effects enhance catalytic efficiency for NRR. Additionally, dual transition metal atom anchored electrocatalysts exhibit high NRR activity by favoring distal or consecutive reaction pathways through strong back-donation interactions. Furthermore, a bias-free PEC platform integrates NRR with H2O oxidation, showcasing simultaneous chemical synthesis using N2, H2O, and sunlight, highlighting the potential for unbiased green chemical production.
What are some common techniques or approaches used to present and interpret XPS data in journal papers?
5 answers
Common techniques and approaches used to present and interpret XPS data in journal papers include peak fitting based on minimizing a figure-of-merit like residual standard deviation, which requires constraints to prevent incorrect results. Uniqueness plots are suggested for identifying correlation between fit parameters in XPS data analysis, as they are easily interpreted and can help avoid inappropriate peak fits. Understanding the impacts of crystallinity on XPS signals, unexpected spectral line shapes, and the ability of XPS to provide information about built-in potentials and band offsets are crucial for in-depth analysis of epitaxial films and heterostructures. Additionally, mechanisms underlying features in XPS spectra, such as multiplet splittings and shake excitation, are essential for relating XPS features to material properties and electronic structure.
What the methods for fabrication of carbon electrodes over using silicon wafers?
5 answers
The fabrication methods for carbon electrodes using silicon wafers involve several key steps. Initially, a slurry containing silicon particles, polymeric binders, and carbon fibers is coated onto a current collector and pyrolyzed at specific temperatures to create the electrode with a silicon-based host material. Another approach includes providing a mixture of a precursor and silicon particles on the current collector, followed by pyrolyzing the mixture to convert the precursor into carbon phases, forming a composite material with silicon particles distributed throughout. Additionally, methods can include utilizing silane-treated silicon particles in a mixture with a precursor, which is then pyrolyzed to form a composite material film with dispersed silicon particles. These techniques offer efficient ways to produce carbon electrodes integrated with silicon for various applications.
What are 0d nanomaterials?
5 answers
0D nanomaterials refer to nanomaterials with all three dimensions on the nanometric scale, typically nanoparticles, nanorods, dendrimers, grafted polymers, nanogels, nanometric micelles, nanometric polymersomes, and core-shell nanocapsules. These materials exhibit unique properties due to their small size, making them suitable for various applications. For instance, sulfur nanomaterials like sulfur nanoparticles, nanodots, and quantum dots fall under the category of 0D nanomaterials and have found applications in bio-sensing, bio-imaging, and energy storage systems. Additionally, the combination of 0D nanomaterials with 2D materials like graphitic carbon nitride has shown promise in enhancing photocatalytic reactions for solar-to-energy conversion, highlighting the potential of such synergies in sustainable energy generation. In nanomedicine, 0D nanomaterials like quantum dots have been utilized for detecting trace heavy metals with high sensitivity, showcasing their versatility in diagnostic applications.
What are the current trends in the development of efficient nanocatalysts for hydrogen evolution reaction?
5 answers
Current trends in efficient nanocatalysts for the hydrogen evolution reaction (HER) focus on enhancing activity and stability. Researchers are exploring various approaches such as bimetallic sulfides like p-NixCo9–xS8, palladium nanoparticles supported on aminated metal-organic frameworks (Pd@Uio-66-NH2), and Bi-based heterostructured nanocatalysts. Transition metal dichalcogenides, like Pt-doped 1 T-TiSe2, are also being investigated for their catalytic potential. Nanocatalysts offer advantages like increased active sites, controlled morphology, and superior stability, making them crucial for sustainable hydrogen production. These advancements in nanocatalyst design aim to address the need for cost-effective, efficient, and environmentally friendly catalysts to drive the hydrogen economy forward.
How many transistors do Class A amplifiers use?
5 answers
Class A amplifiers use at least one transistor for amplification.
What relates algan/gan hemt woth scattering mechanism?
4 answers
AlGaN/GaN HEMTs are related to scattering mechanisms. The scattering mechanisms considered in these devices include polarized Coulomb field (PCF) scattering, polar optical phonon scattering, acoustic deformation potential scattering, inter-valley phonon scattering, and piezoelectric scattering. The gate bias voltage affects the intensity of PCF scattering, which in turn influences the drift velocity under high electric fields. The presence of PCF scattering in AlGaN/GaN HEMTs leads to a deviation in the electron saturation drift velocity from the Monte Carlo simulation of the GaN material. The influence of various material parameters on the response voltage in GaN HEMT THz detectors is also studied, including phonon scattering, dislocation scattering, and interface roughness scattering mechanisms. Additionally, the carrier surface density affects the response voltage due to piezoelectric scattering and optical phonon scattering.
Any discussion about scattering mechanism in algan/gan hemt in cryogenic ?
4 answers
Scattering mechanisms in AlGaN/GaN high-electron-mobility transistors (HEMTs) at cryogenic temperatures have been studied in the literature. A two-parameter-noise model has been proposed to describe the high-frequency noise behavior of GaN-based HEMTs at cryogenic temperatures. The model considers the noise contributions from the intrinsic device, the parasitic network, and the gate leakage, providing the frequency and bias dependence of the cryogenic noise properties of AlGaN/GaN HEMTs. Additionally, different scattering mechanisms in GaN HEMTs with AlGaN barrier layers have been investigated, leading to the development of a mathematical model for different scattering-limited mobilities. The scattering mechanisms considered include acoustic and optic phonons, dislocation, interface roughness, and alloy disorder. It has been found that scattering, predominantly due to interface roughness, determines the Hall mobility in AlInGaN/GaN heterojunctions.
What are some reseach article on SCAPS-1D published in solar energy journal?
5 answers
SCAPS-1D has been used in several research articles published in the Solar Energy journal. Mahmoud Abdelfatah et al. presented a numerical simulation of ZrS2/CuO heterojunction solar cells, achieving an efficiency of 23.8%. Ubaid-ur Rehman et al. optimized Cs2TiI6-based perovskite solar cells, achieving an efficiency of 28.07%. Sunirmal Kumar Biswas and Mostak Ahmed proposed a CuBi2O4-based thin-film solar cell with an efficiency of 31.21%. Godwin Joseph Ibeh et al. optimized copper indium gallium diselenide solar cells, achieving an efficiency of 31.11%. Chandni Tiwari simulated CuO-based solar cells with different buffer layers, with the CuO/ZnO solar cell showing the highest efficiency of 20%. These articles demonstrate the use of SCAPS-1D in optimizing various parameters to improve the efficiency of solar cells.