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Proceedings ArticleDOI
25 Mar 2008
7 Citations
This allows a reduction on the number of needed transistors to implement a circuit.
These are the highest values ever reported for organic transistors.
These transistors provide high collector current densities over 1×105 A/cm2, indicating the successful suppression of current blocking.
Proceedings ArticleDOI
Sun Shuo, Arindam Basu 
19 Dec 2011
13 Citations
This allows us to identify the most critical transistors that need to be matched.
The transistors exhibit high current gains over 200, which is comparable to those in transistors grown on InP substrates.
The present transistors are the first InP/GaAsSb DHBTs with an f<sub>MAX</sub> in excess of 600 GHz.
In this paper, we arrive at a better trade-off between the two, by realizing a marginally increased speed performance through a small rise in the number of transistors.
This method is useful for finding the best possible transistor pairs, including nondual transistors.
This latter finding sets a limitation on the maximum spacer depth for the high performance bipolar transistors.

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