scispace - formally typeset
Search or ask a question

How many transistors in m2 chip? 

Negative-bias temperature instability
CMOS
Static random-access memory
Nanoelectronics
Transistor

Answers from top 8 papers

More filters
Papers (8)Insight
Open access•Proceedings Article•DOI
Hardware support for code integrity in embedded processors
Milena Milenkovic, Aleksandar Milenkovic, Emil Jovanov 
24 Sep 2005
47 Citations
On the other hand, a further increase in the number of transistors on a single chip enables integrated hardware support for functions that formerly were restricted to the software domain.
Proceedings Article•DOI
An efficient built-in self-test algorithm for neighborhood pattern sensitive faults in high-density memories
Dong-Chual Kang, Sang-Bock Cho 
27 Jun 2000
8 Citations
Consequently, these reduce the number of transistors used for a BIST circuit.
Journal Article•DOI
A tunneling field-effect transistor with 25 nm metallurgical channel length
Fu-Cheng Wang, W. E. Zhang, C. H. Yang, M. J. Yang, Brian R. Bennett, R. A. Wilson, D. R. Stone 
02 Jun 1997-Applied Physics Letters
9 Citations
The results demonstrate a new scheme of building nanometer-scale transistors.
Proceedings Article•DOI
A complementary-pair of high-power MOSFET's
Takeaki Okabe, I. Yoshida, Shikayuki Ochi, M. Nagata 
01 Jan 1977
11 Citations
Measurement of these devices reveals superior thermal characteristic and assures a larger ASO than that of conventional bipolar transistors of the same chip size.
Proceedings Article•DOI
Variability in sub-100nm SRAM designs
R. Heald, P. Wang 
07 Nov 2004
131 Citations
Hence, the small transistors in SRAM cells are particularly sensitive to these variations.
Open access•Journal Article•DOI
A novel retina chip with simple wiring for edge extraction
H. Ikeda, Kiyotaka Tsuji, Tetsuya Asai, Hiroo Yonezu, Jang-Kyoo Shin 
01 Feb 1998-IEEE Photonics Technology Letters
25 Citations
The chip has a novel wiring structure in which all pixels are connected through the channel of MOS transistors, which simplifies a wiring structure compared with conventional resistive networks.
Proceedings Article•DOI
Advanced simulation of statistical variability and reliability in nano CMOS transistors
Asen Asenov, Scott Roy, R.A. Brown, Gareth Roy, Craig Alexander, Craig Riddet, Campbell Millar, Binjie Cheng, Antonio Martinez, Natalia Seoane, Dave Reid, Muhammad Faiz Bukhori, Xingsheng Wang, Urban Kovac 
01 Jan 2008
39 Citations
Two transistors next to each other on the chip with exactly the same geometries and strain distributions may have characteristics from each end of a wide statistical distribution.
Journal Article•DOI
Modeling of failure probability and statistical design of SRAM array for yield enhancement in nanoscaled CMOS
Saibal Mukhopadhyay, Hamid Mahmoodi, Kaushik Roy 
21 Nov 2005-IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
494 Citations
The developed design strategy statistically sizes different transistors of the SRAM cell and optimizes the number of redundant columns to be used in the SRAM array, to minimize the failure probability of a memory chip under area and leakage constraints.

Related Questions

How many transistors are in Iphone 13 Pro Max?8 answers
How many transistors are in a m1 Mac?6 answers
How many transistors are in a m1 chip?9 answers
How many transistors are in the Apple m1 chip?15 answers
How many transistors are in the new Iphone?7 answers
How many transistors does Iphone 13 have?5 answers

See what other people are reading

What is the number of studies on memcapacitor emulator in the literature?
5 answers
There are five studies on memcapacitor emulators in the literature. These studies propose innovative designs for memcapacitor emulators using various components such as current feedback amplifiers, analog multipliers, resistors, and capacitors. The emulators are designed to operate at high frequencies, exhibit non-volatility behavior, and are robust against mismatch and process variations. Additionally, the studies demonstrate the expandability of memcapacitor circuits using memristors and mutators, enabling the construction of complex circuit configurations. The proposed emulators have been validated through simulations, experimental verifications, and post-layout analyses, showcasing their efficiency, low power consumption, and applicability in practical applications like neuromorphic computing.What are the current distance ranges of RFID technology updated during 2023-2024?
5 answers
In recent advancements in RFID technology during 2023-2024, significant progress has been made in extending the distance ranges of RFID systems. Various techniques have been developed to enhance the positioning capabilities of RFID tags. These include utilizing Received Signal Phase (RSP) methods on 5.8 GHz backscatter tunneling tags, achieving distances up to 35 meters from the reader with minimal distance errors. Additionally, the deployment of RFID technology for indoor positioning has seen improvements through techniques like phase difference of arrival (PDOA), overcoming limitations of phase differences and enabling accurate range estimation even with significant Round Trip Time of Flight (RTTF) measurement errors. Furthermore, advancements in long-range RFID readers have demonstrated ranges of up to 22 meters, particularly suitable for applications like electronic toll gates.How transparent oxides can be used as gate dielectric?
5 answers
Transparent oxides can be utilized as gate dielectrics in various applications. For instance, in the study by Alshammari et al., a novel process was developed to fabricate thin film transistors (TFTs) using a binary oxide, Hf x Zn1- x O2- δ (HZO), for all transistor layers, including the gate and dielectric layers. This approach allowed for tuning the electronic properties of the oxide from conducting to insulating by adjusting the chemical precursors' flow ratio. Additionally, the work by ViolBarbosa et al. demonstrated that ionic liquid gating can induce a metallic phase in insulating films of WO3, altering the material's conductivity while maintaining transparency in the visible range. These studies highlight the versatility of transparent oxides in serving as gate dielectrics with tunable electronic properties for various electronic devices.What are the specific challenges that students face when learning digital circuits?
5 answers
Students face specific challenges when learning digital circuits, including the fear of errors in practical implementation, the need to adapt skills to rapid technological advancements, lack of interest in hardware-related courses, and constraints in online learning processes.These challenges highlight the importance of bridging theoretical knowledge with practical applications through simulation, reducing system size and energy consumption, increasing talent pools, and enhancing engagement experiences in digital learning. Overcoming these obstacles requires innovative teaching methods like structured inquiry-based learning, aligning course outcomes with program outcomes, and incorporating hands-on experiences and project-based learning to improve students' knowledge, creativity, and practical thinking in the field of digital circuits.Is there an article about a led-array with individually addressable electrodes?
5 answers
Yes, there are multiple articles discussing LED arrays with individually addressable electrodes. One article presents a novel approach using GaN micro-light-emitting diodes (LEDs) with individually addressed n-electrodes, allowing for faster modulation and compatibility with NMOS transistor-based drivers. Another study introduces GaN-based micro-LED arrays with a reversed electrode structure, featuring a common p-electrode and individually addressable n-electrodes, enabling high-performance characteristics and compatibility with NMOS drivers for faster modulation. Additionally, a different research paper describes the fabrication of individually addressable GaN microdisk LED arrays, showcasing ultrahigh resolution and stable operation in free-standing and flexible forms. These articles collectively highlight advancements in LED array technology with individually addressable electrodes for various applications.Is there an article about a led-array with individually addressable cathodes and individually addressable anodes?
5 answers
Yes, there are articles discussing LED arrays with individually addressable cathodes and individually addressable anodes. One study presents a novel inverted, vertical microdisplay prototype device with individually addressing cathodes, demonstrating the use of silicon-based vertical Micro-LEDs with this configuration. Another article showcases a GaN-based micro-LED array with a common p-electrode and individually addressable n-electrodes, designed for faster modulation and visible light communication applications. These innovative LED array designs offer improved performance characteristics, such as enhanced brightness, heat dissipation, and modulation bandwidth, making them suitable for high-resolution displays, wearables, and VR/AR headsets.Production of field effect transistors?
4 answers
The production of field effect transistors involves several key steps outlined in the provided research contexts. These steps include depositing semiconductor material on a substrate, forming gate dielectric layers, arranging gate electrode layers, creating contact trenches, back-producing gate electrodes, forming source/drain regions, and connecting them with contact structures. Additionally, methods include depositing insulating films, refractory metal films, and gate metals, etching to define gate structures, and utilizing etching stopper layers to maintain film thickness. Furthermore, the process may entail depositing conducting and insulating materials on a temporary substrate before transferring them to the final substrate. Techniques like self-assembled monolayers and Schottky junctions are also employed to enhance transistor performance, reduce resistance, and improve reliability.What are the common fabrication steps used in the production of bipolar junction transistors?
5 answers
The common fabrication steps in producing bipolar junction transistors involve several key processes. These include implantation procedures to form different regions with varying dopant concentrations, creating extrinsic collector and base regions buried in the semiconductor substrate, forming surface-doped regions and insulating layers on the semiconductor substrate, and patterning photoresists to define openings for implantation processes with varying dopant concentrations. Additionally, steps such as forming well regions with different concentrations in the base and emitter regions, defining trenches and openings for silicon and silicon-germanium regions, and establishing a composite base region with specific dopant concentration levels are crucial in the fabrication process of bipolar junction transistors.Forward rection coefficient of Surface Conjugation Parameter in ISFET biosensor ?
4 answers
The forward reaction coefficient of the surface conjugation parameter in ISFET biosensors is a critical factor that influences the device's sensitivity and specificity towards target analytes, including viral molecules and various ions. The design of an immunosensor for viral molecules, as proposed by Gasparyan et al., utilizes the modulation of the surface potential at the semiconductor-dielectric interface, which is directly influenced by the interaction and immobilization of viral molecules on the ISFET's surface. This interaction underscores the importance of the surface conjugation parameter in determining the ISFET's response to specific analytes. The advancements in ISFET technology, highlighted by Surmalyan, emphasize the device's high sensitivity and fast response time, which are partly attributed to the effective surface conjugation of analytes, enabling rapid detection of pH changes or ion concentrations. Similarly, the development of an ISFET device selective to anionic detergents by Campanella et al. demonstrates the role of surface conjugation in extending the linearity range of detection for specific surfactants. Gordon et al.'s work on parameter extraction models for ISFET devices in polyelectrolyte media further elucidates the importance of understanding the surface conjugation dynamics to improve the device's field use for biological and chemical sensing. Massobrio et al.'s ISFET model, which incorporates the chemical influence of ionic interaction at the electrolyte-insulator interface, provides a framework for simulating the effects of surface conjugation on the device's output characteristics. Khanna Fiete's discussion on the development of biosensors for medical applications through enzyme-promoted reactions highlights the forward reaction coefficient's role in creating a gate potential, which is a direct outcome of effective surface conjugation. Ye et al.'s model development using COMSOL Multiphysics emphasizes the sensitivity of ISFETs to pH changes, which can be optimized by understanding the surface conjugation parameters. Dhar et al.'s TCAD simulations of ISFETs reveal a correlation between device dimensions and sensitivity, suggesting that the forward reaction coefficient of surface conjugation can be influenced by the physical structure of the ISFET. Poghossian and Schöning's multi-parameter sensor system, which uses a Ta2O5-gate ISFET, demonstrates the versatility of ISFETs in detecting various parameters through effective surface conjugation strategies. Lastly, Alegret et al.'s construction method for a PVC-matrix membrane ISFET-based urea sensor illustrates the practical application of understanding the forward reaction coefficient in developing sensitive and stable biosensors. In summary, the forward reaction coefficient of the surface conjugation parameter plays a pivotal role in the functionality and performance of ISFET biosensors, influencing their sensitivity, specificity, and overall effectiveness in detecting a wide range of analytes.Are there led arrays with individual addressable p and n contacts?
5 answers
LED arrays with individual addressable p and n contacts have been developed. These arrays feature a unique structure where each LED element has its own n-electrode while sharing a common p-electrode. This design minimizes series-resistance differences and enables compatibility with n-type metal-oxide-semiconductor (NMOS) transistor-based drivers for faster modulation. The individual addressability of the n-electrodes allows for precise control over each LED element in the array, enhancing performance characteristics such as optical power and modulation bandwidth. These advancements in LED array technology offer promising applications in areas like visible light communication, where high-speed data transmission without errors has been achieved using these individually addressable LED arrays.Problems that need to be solved with memristors?
5 answers
Memristors present solutions to various challenges in different fields. They address the need for high-precision programmability in neural network applications, ensuring uniform performance across distributed networks. Memristors also offer potential in high-speed digital compressed sensing for edge computing, although the mechanisms for achieving this remain unclear. Furthermore, memristors face challenges related to electromagnetic interference effects, particularly from continuous waves, which can impact switching time, dynamic range, and nonlinearity. In the realm of artificial intelligence, memristors aim to reduce energy consumption and enhance adaptability, bridging the gap between AI and biological brains, yet large-scale implementation remains a challenge. Additionally, modeling memristors poses challenges such as non-ideal mechanisms and parameter variations, necessitating advanced simulation strategies for accurate representation.