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Proceedings ArticleDOI
C. Bamji, M. Borah 
04 Jan 1998
The improved cost heuristic presented in this work takes into account the effect of sizing a given transistor T on many different critical paths in the circuit, based on local information in the neighborhood of T. When used with a TILOS-like algorithm, the heuristic produces layouts with considerably lower active area than layouts generated using the traditional cost heuristics.
Proceedings ArticleDOI
Victor Champac, A. Rubio, Joan Figueras 
27 Oct 1993
It is shown that a floating gate transistor is not a stuck-open transistor and that significative values of quiescent current consumption may exist.
The presented RF power transistor is cost effective and can be conveniently applied in the power amplifier integration for RF SoC
Proceedings ArticleDOI
Mo Liu, Craig S. Lent 
15 Sep 2003
20 Citations
This paradigm provides a possible route to transistor-less electronics at the nano-scale.
It is shown by measurements on fabricated structures and by numerical device simulations that the current drive capability of such a transistor is comparable to what has been achieved in a conventional transistor with buried layer and plug or in any optimized lateral transistor with buried emitter and collector layers.
In this paper, we propose a structure that improves the OFF state and switching behavior of the transistor without increase in the transistor length.
The advantages of this transistor are excellent cutoff characteristics, a small substrate bias effect, and high reliability (compared with the LOCOS-isolated transistor).
With such comparisons, realistic LER specifications can be made for a given transistor.
Excess transistor performance can be traded-off for cost by designing out inductors.
This device should be priced so that the overall cost of the transistor complement in the particular communication equipment is competitive with the cost of a complement of functionally tested devices.
However, the decrease in transistor count comes at a cost in process tolerance due to the multivalued nature of the device operation.
A transistor that can operate below 0.5 V supply is highly desirable.
This increase in transistor variability poses a serious challenge to the cost-effective utilization of scaled technologies.
The vertical transistor delivers an on current of 0.35 mA/cm2 and an on/off current ratio of around 3000 at 1.8 V. The results prove the feasibility to produce low-voltage organic transistors over a large area with potentially low production cost.
Compared with the field-effect transistor, a source-gated transistor more nearly meets these requirements.
Results indicate a 40% decrease in lot-to-lot variation of transistor performance.
Unfortunately, we are now in a phase where transistor cost and energy consumption are barely scaling, making it necessary to rethink the way we build scalable systems.
Journal ArticleDOI
John M. Shannon, Ed Gerstner 
86 Citations
The authors introduce a source-gated transistor that overcomes some of the fundamental limitations of the field-effect transistor.

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