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RTS measurements performed on small-area MOS transistors partly support the validity of this model.
Proceedings ArticleDOI
R. Heald, P. Wang 
07 Nov 2004
131 Citations
Hence, the small transistors in SRAM cells are particularly sensitive to these variations.
We believe these are the fastest transistors of their kind in the world.
To the best of our knowledge, these are the most radiation-hard thin film transistors reported to date.
Thus, this device is promising for highly scaled transistors.
The resulting thin films yield stable and reproducible performance in thin-film transistors.
The transistors are scalable because of the thin silicon technology and the memories are highly scalable because they allow efficient coupling between the carriers and storage region.

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