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We demonstrate an integration of polymer light-emitting diode (LED) and polymer transistor in which no patterning of the organic layers is needed.
Open accessBook ChapterDOI
10 Oct 2006
65 Citations
This way, the contribution of a single transistor to the overall supply current can be modulated by light.
Here we demonstrate that such a heterojunction may be utilized to obtain a unique transistor operation.
These calculations confirm tie general picture given of transistor action.
Normal transistor performance was observed after the GaAs LED fabrication, indicating that GaAs and Si processing technologies appear to be compatible.
It is found that the MITT can be operated similarly to the semiconductor transistor, and the feasibility of the nanoscale metal transistor is demonstrated.
The internal quantum efficiency of the light-emitting transistor is comparable to that of light-emitting diodes.