How to etch graphene?
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This paper reports a novel universal method to grow and etch graphene film using a one-step laser-scribing process. | |
Herein, we demonstrate a facile and scalable chemical vapor deposition approach to synthesize meter-sized super-clean graphene with an average cleanness of 99%, relying on the weak oxidizing ability of CO2 to etch away the intrinsic contamination, i. e., amorphous carbon. | |
These reports show that metallic nanoparticles etch the surface layers of graphite or graphene anisotropically along the crystallographic zig-zag ‹11-20› or armchair ‹10-10› directions. | |
58 Citations | Graphene etch stops enable one-step patterning of sophisticated devices from heterostructures by accessing buried layers and forming one-dimensional contacts. |
58 Citations | Here we demonstrate an atomically thin graphene etch stop for patterning van der Waals heterostructures through the selective etch of two-dimensional materials with xenon difluoride gas. |
72 Citations | Here, we show that graphene origami is an efficient way to convert graphene into atomically precise, complex nanostructures. |
18 Citations | Graphene hydrogenation is an attractive approach to functionalize graphene. |
6 Citations | By using a self-aligned contact method during device fabrication, we can skip the dry-etch process which requires an exact etch-stop at the surface of the graphene layer and is not easy to control. |
15 Citations | It is possible to build graphene-based electronic circuits from graphene hydroxide without the need for cutting or etching. |
Electron-beam induced deposition on graphene might be used to create nanometer-scale doping patterns, diffraction gratings, or etch masks in this novel electronic material. |
Related Questions
How to etch HfO2 by atomic layer etching?3 answersHfO2 can be etched by atomic layer etching (ALE) using different methods. One approach involves surface modification by fluorocarbon film deposition followed by activation of etching through Ar ion bombardment. Another method involves exposure to atomic hydrogen beams, which leads to the formation of a volatile hafnium dihydroxide and allows for precise control of the etching conditions. A selective ALE process for HfO2 can be achieved by combining substrate-selective deposition with etching using a CH4/CHF3 mixture. Additionally, thermal ALE using HF and TiCl4 as reactants has been studied, showing self-limiting etching of HfO2 films. The etching selectivity can be explained by the reaction thermochemistry and the stability and volatility of the possible etch products.
How to etch SnO2 by atomic layer etching?5 answersSnO2 can be etched by atomic layer etching (ALE) using fluorine-based etching processes. Tin forms nonvolatile compounds with fluorine at process temperatures, allowing it to function as an etch mask. In ALE, the substrate is alternately exposed to a first vapor phase non-metal halide reactant (e.g., fluorinating gas) and a second vapor phase halide reactant (e.g., chlorinating gas). The ALE process cycle includes forming an adsorption monolayer of the etchant on the substrate, purging the excess etchant, desorbing the adsorption monolayer by exposing it to gas ions, and purging the system again. To etch SnO2, one can use SF6 reactive ion etching (RIE) with SnO2 as the etch mask. Grid patterns can be transferred into Si(001) using SF6 RIE when a certain number of atomic layer deposition (ALD) cycles of SnO2 are grown.
What are the problems with over-etching during Mxene synthesis?4 answersOver-etching during MXene synthesis can lead to several problems. One issue is the subsequent formation of carbide-derived carbon (CDC). This over-etching of the parent MAX phases can result in the formation of CDC instead of MXene. Another problem is the introduction of defects in the MXene material. The presence of aluminum and the unsuccessful removal of AlF3 by-products can lead to the presence of defects in the MXene layers. Additionally, over-etching can increase the fluorine content in the MXene, which can lead to an increase in the number of defects in the material. These problems highlight the importance of carefully balancing the etching parameters to avoid over-etching and ensure the production of high-quality MXene materials.
What are the factors that affect the etching time of MXene?3 answersThe factors that affect the etching time of MXene include the type and concentration of the etchant, the temperature of the etching process, and the particle size of the MAX phase precursor. Different fluoride-based salts, such as lithium fluoride (LiF) and ammonium fluoride (NH4F), have been used as etchants for MXene synthesis. NH4HF2 has been found to be the most efficient etchant, reducing the etching time to a few hours. The concentration of the etchant also plays a role, with optimal concentrations of LiF at 5M and NH4F at 3M. The temperature of the etching process is another important factor, with room temperature being the optimum due to the exothermic reaction involved. Additionally, the particle size of the MAX phase precursor can influence the etching kinetics, with narrow fractions of particle sizes yielding better results.
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