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How to read NPN transistor? 

Bipolar junction transistor
Common emitter
Depletion region
Transistor
Germanium

Answers from top 9 papers

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Papers (9)Insight
Journal Article•DOI
On the Neutron Bombardment Reduction of Transistor Current Gain
J. W. Easley, J. A. Dooley 
01 Jun 1960-Journal of Applied Physics
16 Citations
These data indicate that previously reported analyses, which lead to a linear dependence of common‐base current‐gain on fast neutron exposure, yield a good approximation for the npn device, but are not of general validity for the pnp germanium transistor.
Journal Article•DOI
Extraction of emitter and base series resistances of bipolar transistors from a single DC measurement
M. Linder, F. Ingvarson, Kjell Jeppson, J.V. Grahn, Shi-Li Zhang, Mikael Östling 
01 May 2000-IEEE Transactions on Semiconductor Manufacturing
19 Citations
The parameters are extracted from a single measurement in the forward active region on one transistor test structure with two separate base contacts, making it a simple and attractive tool for bipolar transistor characterization.
Journal Article•DOI
Gain degradation and enhanced low-dose-rate sensitivity in bipolar junction transistors
Ronald D. Schrimpf
01 Jun 2004-International Journal of High Speed Electronics and Systems
18 Citations
In npn transistors, these two factors both result in increased base current, while in pnp devices, positive charge in the oxide moderates the increase in base current due to surface recombination.
Journal Article•DOI
Hardness-assurance issues for lateral PNP bipolar junction transistors
Ronald D. Schrimpf, R.J. Graves, D.M. Schmidt, Daniel M. Fleetwood, R.L. Pease, W.E. Combs, M. DeLaus 
01 Dec 1995-IEEE Transactions on Nuclear Science
74 Citations
The dose-rate dependence of gain degradation in lateral PNP transistors is even stronger than the dependence previously reported for NPN BJTs.
Journal Article•DOI
Physical principles involved in transistor action
John Bardeen, Walter H. Brattain 
01 Apr 1949-Bell System Technical Journal
22 Citations
These calculations confirm tie general picture given of transistor action.
Journal Article•DOI
InSb Nanowire Field-Effect Transistors and Quantum-Dot Devices
Henrik Nilsson, Mingtang Deng, Philippe Caroff, Claes Thelander, Lars Samuelson, Lars-Erik Wernersson, Hongqi Xu 
10 Jan 2011-IEEE Journal of Selected Topics in Quantum Electronics
55 Citations
The measurements reveal that the fabricated devices show the desired transistor characteristics.
Journal Article•DOI
An SCR-Incorporated BJT Device for Robust ESD Protection With High Latchup Immunity in High-Voltage Technology
Chih-Yao Huang, Fu-Chien Chiu, Quo-Ker Chen, Ming-Fang Lai, Jen-Chou Tseng 
01 Mar 2012-IEEE Transactions on Device and Materials Reliability
26 Citations
It can be equivalently regarded as parallel connection of an incorporated PNPN SCR part and an NPN BJT part.
Proceedings Article•DOI
Verification of heavy doping parameters in semiconductor device modeling
S.P. Gaur, G.R. Srinivasan, I. Antipov 
01 Jan 1980
8 Citations
Model predictions agree very well with measured terminal characteristics of various NPN and PNP transistor structures and support heavy-doping parameters used in the model.
Journal Article•DOI
Simulation and design of InAlAs/InGaAs pnp heterojunction bipolar transistors
Suman Datta, Shen Shi, K.P. Roenker, Marc Cahay, William E. Stanchina 
01 Aug 1998-IEEE Transactions on Electron Devices
41 Citations
The analysis indicates that high-performance pnp InP-based HBT's are feasible, but that optimization of the transistor's multilayer structure is different than for the npn device.

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