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In npn transistors, these two factors both result in increased base current, while in pnp devices, positive charge in the oxide moderates the increase in base current due to surface recombination.
The model provides an accurate description of the transistor behavior in all operating conditions.
The measurements reveal that the fabricated devices show the desired transistor characteristics.
These pnp data fit well to the data of the medium-voltage npn transistors also available in this CBiCMOS process.
Ultimately, the model presented allows more accurate measurement of material properties via transistor characterization.
It is proposed that research be carried out on the power silicon carbide NPN BJT, since it does not have the premature gate oxide breakdown and low inversion layer mobility problems associated with SiC MOSFET technology.
The dose-rate dependence of gain degradation in lateral PNP transistors is even stronger than the dependence previously reported for NPN BJTs.
Model predictions agree very well with measured terminal characteristics of various NPN and PNP transistor structures and support heavy-doping parameters used in the model.
The analysis indicates that high-performance pnp InP-based HBT's are feasible, but that optimization of the transistor's multilayer structure is different than for the npn device.
These data indicate that previously reported analyses, which lead to a linear dependence of common‐base current‐gain on fast neutron exposure, yield a good approximation for the npn device, but are not of general validity for the pnp germanium transistor.

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Area of not gate in 45nm technology
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Can i detect the torque of perpendicular MTJ by stfmr?
4 answers
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