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The combination of both a transistor and a mechanical element into a hybrid unit enables on-chip functionality and performance previously unachievable in silicon.
Compared with the field-effect transistor, a source-gated transistor more nearly meets these requirements.
The high speed performance of the pnp transistors surpasses the best reported values of this transistor type substantially.
The transistor results are promising with good mobility values and drive current.
This is the largest array among simple 1R RRAM, without using a selector device or extra transistor.
The transistor is expected to have a strong impact on the feasibility to realize mixed analog and digital signal circuits with high and low voltage functions on the same chip.

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