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Double gate transistor circuit consider as a promising candidate for low power application domain as well as used in Radio Frequency (RF) devices.
Thus, the TBJ can also be used as a transistor.
The circuit construction is simple enough for use in the portable subscriber units of a digital mobile radio system.
Thus, a more efficient use of the radio spectrum is required.
It is a possible alternative for transistor based technology.
Our results show that the present device operates as a radio-frequency single electron transistor.
A transistor that can operate below 0.5 V supply is highly desirable.
Compared with the field-effect transistor, a source-gated transistor more nearly meets these requirements.
As a consequence, the new model makes the conventional transistor library unnecessary and offers bipolar circuit designers the flexibility to use the transistor size that fits the application best.
The other proposes an extension of permeable base transistor technology to bipolar transistors in what is called a gridded‐base bipolar transistor.

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What is advantage of immunosensor?
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What are the minimum mask steps required to make a functional pMOS?
5 answers
To create a functional pMOS transistor with reduced masking steps, the process involves utilizing a minimum number of critical masks. By forming conductive gate/insulator layer stacks on different conductivity portions of a semiconductor substrate and implementing disposable outer sidewall spacers, heavy and light source/drain implantations of opposite conductivity types can be performed with only two critical masks, reducing production costs and duration while increasing manufacturing throughput. Additionally, a method involves forming Sigma-shaped grooves in sidewalls and filling them with crushing stress materials to enhance the transistor's channel region. This streamlined approach allows for the efficient formation of pMOS transistors with improved performance.
What is the number of studies on memcapacitor emulator in the literature?
5 answers
There are five studies on memcapacitor emulators in the literature. These studies propose innovative designs for memcapacitor emulators using various components such as current feedback amplifiers, analog multipliers, resistors, and capacitors. The emulators are designed to operate at high frequencies, exhibit non-volatility behavior, and are robust against mismatch and process variations. Additionally, the studies demonstrate the expandability of memcapacitor circuits using memristors and mutators, enabling the construction of complex circuit configurations. The proposed emulators have been validated through simulations, experimental verifications, and post-layout analyses, showcasing their efficiency, low power consumption, and applicability in practical applications like neuromorphic computing.
What are 3t3 cells?
5 answers
3T3 cells are a type of cell line commonly used in various research fields. These cells are embryonic mouse fibroblast cells that play a crucial role in cell biology studies due to their ability to grow in flat monolayers, making them ideal for cell culture experiments. 3T3 cells have been extensively studied in different contexts, such as investigating transformation, stress fiber formation, and serving as feeder cells for keratinocytes. Additionally, these cells are utilized in experiments related to calcium influx through various receptors, highlighting their significance in understanding cellular signaling pathways. Overall, 3T3 cells are valuable tools in biomedical research, offering insights into cell behavior, culture studies, and signaling mechanisms.
What are good papers that explain the delta method of minimizing offset thermal EMFs?
5 answers
The delta method for minimizing offset thermal EMFs is well explained in the paper by Rodenbeck et al., where they introduce a technique called "delta modulation" (DM) to improve the sensitivity of RF subsamplers in radar and coherent receiver applications. This method involves feeding the time-average output of a monobit analog-to-digital converter (ADC) back to the ADC input with opposite polarity to correct for aggregate DC offsets, enhancing ADC sensitivity. The paper demonstrates the effectiveness of analog and digital DM circuits in correcting output quantization imbalance, even under varying temperature conditions, and improving baseband spectrum quality for realistic radar applications. The DM technique does not impact ADC linearity, as confirmed through two-tone testing.
How transparent oxides can be used as gate dielectric?
5 answers
Transparent oxides can be utilized as gate dielectrics in various applications. For instance, in the study by Alshammari et al., a novel process was developed to fabricate thin film transistors (TFTs) using a binary oxide, Hf x Zn1- x O2- δ (HZO), for all transistor layers, including the gate and dielectric layers. This approach allowed for tuning the electronic properties of the oxide from conducting to insulating by adjusting the chemical precursors' flow ratio. Additionally, the work by ViolBarbosa et al. demonstrated that ionic liquid gating can induce a metallic phase in insulating films of WO3, altering the material's conductivity while maintaining transparency in the visible range. These studies highlight the versatility of transparent oxides in serving as gate dielectrics with tunable electronic properties for various electronic devices.
What is the difference between constant voltage and constant current in gel electrophoresis?
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In the context of gel electrophoresis, the difference between constant voltage and constant current lies in their control mechanisms and adaptability. Constant current control in microchip electrophoresis directly indicates the velocity of the electroosmotic flow (EOF), making it more convenient than constant voltage control. Constant voltage electromigration testing offers advantages over constant current testing for materials with varying geometries, while the benefits are minimal for properly produced materials. A constant current circuit with high breakdown-voltage transistors is designed for high voltage circuits with low manufacturing costs. Additionally, a constant current constant voltage circuit stabilizes voltage and controls levels effectively, featuring strong anti-interference capabilities. These findings highlight the nuanced differences and applications of constant voltage and constant current in gel electrophoresis.
Is there an article about a led-array with individually addressable electrodes?
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Is there an article about a led-array with individually addressable cathodes and individually addressable anodes?
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Yes, there are articles discussing LED arrays with individually addressable cathodes and individually addressable anodes. One study presents a novel inverted, vertical microdisplay prototype device with individually addressing cathodes, demonstrating the use of silicon-based vertical Micro-LEDs with this configuration. Another article showcases a GaN-based micro-LED array with a common p-electrode and individually addressable n-electrodes, designed for faster modulation and visible light communication applications. These innovative LED array designs offer improved performance characteristics, such as enhanced brightness, heat dissipation, and modulation bandwidth, making them suitable for high-resolution displays, wearables, and VR/AR headsets.
Production of field effect transistors?
4 answers
The production of field effect transistors involves several key steps outlined in the provided research contexts. These steps include depositing semiconductor material on a substrate, forming gate dielectric layers, arranging gate electrode layers, creating contact trenches, back-producing gate electrodes, forming source/drain regions, and connecting them with contact structures. Additionally, methods include depositing insulating films, refractory metal films, and gate metals, etching to define gate structures, and utilizing etching stopper layers to maintain film thickness. Furthermore, the process may entail depositing conducting and insulating materials on a temporary substrate before transferring them to the final substrate. Techniques like self-assembled monolayers and Schottky junctions are also employed to enhance transistor performance, reduce resistance, and improve reliability.
What are the common fabrication steps used in the production of bipolar junction transistors?
5 answers
The common fabrication steps in producing bipolar junction transistors involve several key processes. These include implantation procedures to form different regions with varying dopant concentrations, creating extrinsic collector and base regions buried in the semiconductor substrate, forming surface-doped regions and insulating layers on the semiconductor substrate, and patterning photoresists to define openings for implantation processes with varying dopant concentrations. Additionally, steps such as forming well regions with different concentrations in the base and emitter regions, defining trenches and openings for silicon and silicon-germanium regions, and establishing a composite base region with specific dopant concentration levels are crucial in the fabrication process of bipolar junction transistors.