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What causes a transistor to burn?

Amorphous solid

Field-effect transistor

Heterojunction bipolar transistor

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Journal Article•DOI Numerical studies of thermal effects on heterojunction bipolar transistor current-voltage characteristics using one-dimensional simulation L.L. Liou, C.I. Huang, John L. Ebel - Show less +2 more 01 Apr 1992-Solid-state Electronics 26 Citations	It is found that the temperature rise due to high current operation causes two effects: the current gain continuously declines after the base push-out is complete; and the negative differential resistance phenomenon occurs in the transistor current-voltage saturation region.
Journal Article•DOI Field-Effect Modulation of the Conductance of Single Molecules Jan Hendrik Schön, Hong Meng, Zhenan Bao - Show less +2 more 07 Dec 2001-Science 85 Citations	This behavior is indicative of transistor action in single molecules.
Journal Article•DOI Effect of dislocations on local transconductance in AlGaN/GaN heterostructures as imaged by scanning gate microscopy Julia W. P. Hsu, Nils Weimann, Michael J. Manfra, Ken W. West, D. V. Lang, F. F. Schrey, Oleg Mitrofanov, Richard J. Molnar - Show less +7 more 24 Nov 2003-Applied Physics Letters 8 Citations	This technique enables us to investigate the role of defects in transistor performance.
Proceedings Article•DOI Effects of device design on the thermal properties of InP-based HBTs James Chingwei Li, Peter M. Asbeck, Marko Sokolich, Tahir Hussain, Donald A. Hitko, Charles H. Fields - Show less +5 more 27 Oct 2003 17 Citations	These results also highlight the significant thermal gradients within the transistor.
Journal Article•DOI Transition from partial to full depletion in silicon-on-insulator transistors: Impact of channel length Frederic Allibert, J. Pretet, G. Pananakakis, Sorin Cristoloveanu - Show less +3 more 10 Feb 2004-Applied Physics Letters 25 Citations	Therefore, a transistor designed as partially depleted can behave as fully depleted.
Journal Article•DOI Failure resistance of amorphous silicon transistors under extreme in-plane strain Helena Gleskova, Sigurd Wagner, Zhigang Suo - Show less +2 more 08 Nov 1999-Applied Physics Letters 213 Citations	The amorphous transistor materials can support such large strains because they lack a mechanism for dislocation motion.
Proceedings Article•DOI Substrate and layout engineering to suppress self-heating in floating body transistors SangHoon Shin, Sanghyeon Kim, Seong Kwang Kim, Heng Wu, Peide D. Ye, Muhammad A. Alam - Show less +5 more 01 Dec 2016 25 Citations	We conclude that thermal aware transistor design can suppress self-heating without compromising performance and electrostatic control of the transistor.

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