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What company invented transistors? 

Atomic layer deposition
Thin-film transistor
Field-effect transistor
Transistor
Metalorganic vapour phase epitaxy

Answers from top 8 papers

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Papers (8)Insight
Journal Article•DOI
Flexible Organic Single-Crystal Field-Effect Transistor for Ultra-Sensitivity Strain Sensing
Haiting Wang, Liangliang Deng, Qingxin Tang, Yanhong Tong, Yichun Liu 
19 Sep 2017-IEEE Electron Device Letters
20 Citations
These results exhibit the promising potential of our transistors in artificial intelligence and healthcare systems.
Journal Article•DOI
Large-area WSe2 electric double layer transistors on a plastic substrate
Kazuma Funahashi, Jiang Pu, Ming-Yang Li, Lain-Jong Li, Yoshihiro Iwasa, Yoshihiro Iwasa, Taishi Takenobu 
01 Jun 2015-Japanese Journal of Applied Physics
14 Citations
These transistors exhibited ambipolar operation and an ON/OFF current ratio of ~104, demonstrating chemically grown WSe2 transistors on plastic substrates for the first time.
Journal Article•DOI
Design and fabrication of large-area thin-film transistor matrix circuits for flat-display panels
Fang Chen Luo, W.A. Hester 
01 Jan 1980-IEEE Transactions on Electron Devices
16 Citations
It is demonstrated that thin-film transistors can be made reproducibly with desirable characteristics.
Journal Article•DOI
Low temperature (<or=600 degrees C) poly-silicon thin film transistors
R. J. Stroh, F. Plais, T. Kretz, P. Legagneux, O. Huet, M. Magis, D. Pribat, N. Jiang, M. C. Hugon, B. Agius 
01 Feb 1994
9 Citations
It is shown that high electron mobilities and low off currents characterise the transistors fabricated with these techniques.
Proceedings Article•DOI
First Transistor Demonstration of Thermal Atomic Layer Etching: InGaAs FinFETs with sub-5 nm Fin-width Featuring in situ ALE-ALD
Wenjie Lu, Younghee Lee, Jessica A. Murdzek, Jonas C. Gertsch, Alon Vardi, Lisa Kong, Steven M. George, Jesus A. del Alamo 
01 Dec 2018
24 Citations
The transistors demonstrated here show an average 60% gm improvement over devices fabricated through conventional techniques.
Journal Article•DOI
Solution-processed ambipolar organic field-effect transistors and inverters.
Eduard J. Meijer, Eduard J. Meijer, Dago M. de Leeuw, Sepas Setayesh, E. van Veenendaal, Bart-Hendrik Huisman, Paul W. M. Blom, Jan C. Hummelen, Ullrich Scherf, T. M. Klapwijk 
21 Sep 2003-Nature Materials
806 Citations
There is ample evidence that organic field-effect transistors have reached a stage where they can be industrialized, analogous to standard metal oxide semiconductor (MOS) transistors.
Journal Article•DOI
Si hetero-bipolar transistor with a fluorine-doped SiC emitter and a thin, highly doped epitaxial base
Toshihiro Sugii, T. Yamazaki, T. Ito 
01 Nov 1990-IEEE Transactions on Electron Devices
41 Citations
The results show the possibility of fabricating transistors with a very thin, highly doped base.
Journal Article•DOI
Hysteresis caused by water molecules in carbon nanotube field-effect transistors
Woong Kim, Ali Javey, Ophir Vermesh, Qian Wang, Yiming Li, Hongjie Dai 
16 Jan 2003-Nano Letters
962 Citations
The results may have implications to field-effect transistors made from other chemically derived materials.

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