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These data indicate that previously reported analyses, which lead to a linear dependence of common‐base current‐gain on fast neutron exposure, yield a good approximation for the npn device, but are not of general validity for the pnp germanium transistor.
Journal ArticleDOI
H. Beneking, L.M. Su, F. Ponse 
8 Citations
The NpN transistor can be operated in bi-direction with comparable current gain due to the wide gap emitter principle and the symmetry of the emitter-base and collector-base heterojunctions.
It can be equivalently regarded as parallel connection of an incorporated PNPN SCR part and an NPN BJT part.
Thus, the TBJ can also be used as a transistor.
In npn transistors, these two factors both result in increased base current, while in pnp devices, positive charge in the oxide moderates the increase in base current due to surface recombination.
Proceedings ArticleDOI
04 Oct 1993
6 Citations
The NPN size must be carefully optimized relative to MOS transistor sizes, gate configuration, and fanout in order to provide an adequate performance advantage.
It is able to obtain transistor networks with transistor count near to the best case of other methods presented in the literature.
Experimental results show that the current gain degradation of the NPN transistors is sensitive to both of ionization and displacement damage.
Comprehensive transistor and logic cell studies demonstrate that the novel NR is the optimal structure for N5 and beyond.

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