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What element are transistors made of? 

Substrate (electronics)
Thin-film transistor
PEDOT:PSS
Transistor
Schottky diode

Answers from top 9 papers

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Papers (9)Insight
Journal Article•DOI
Transistor action in novel GaAs/W/GaAs structures
G. E. Derkits, J. P. Harbison, J. Levkoff, D. M. Hwang 
05 May 1986-Applied Physics Letters
13 Citations
These are the first reported metal gate transistors in the III‐V materials and the first using a nonepitaxial base and laterally seeded overgrowth.
Journal Article•DOI
Hysteresis caused by water molecules in carbon nanotube field-effect transistors
Woong Kim, Ali Javey, Ophir Vermesh, Qian Wang, Yiming Li, Hongjie Dai 
16 Jan 2003-Nano Letters
962 Citations
The results may have implications to field-effect transistors made from other chemically derived materials.
Journal Article•DOI
RF transistors: Recent developments and roadmap toward terahertz applications
Frank Schwierz, Juin J. Liou 
01 Aug 2007-Solid-state Electronics
120 Citations
It is shown that Si-based RF transistors are very fast and compete successfully with GaAs pHEMTs and GaAs HBTs.
Journal Article•DOI
Large-area WSe2 electric double layer transistors on a plastic substrate
Kazuma Funahashi, Jiang Pu, Ming-Yang Li, Lain-Jong Li, Yoshihiro Iwasa, Yoshihiro Iwasa, Taishi Takenobu 
01 Jun 2015-Japanese Journal of Applied Physics
14 Citations
These transistors exhibited ambipolar operation and an ON/OFF current ratio of ~104, demonstrating chemically grown WSe2 transistors on plastic substrates for the first time.
Journal Article•DOI
Radiation-Hard ZnO Thin Film Transistors
J. Israel Ramirez, Yuanyuan V. Li, Hitesh A. Basantani, Kevin D. Leedy, Burhan Bayraktaroglu, Gregg H. Jessen, Thomas N. Jackson 
01 May 2015-IEEE Transactions on Nuclear Science
27 Citations
To the best of our knowledge, these are the most radiation-hard thin film transistors reported to date.
Journal Article•DOI
Si hetero-bipolar transistor with a fluorine-doped SiC emitter and a thin, highly doped epitaxial base
Toshihiro Sugii, T. Yamazaki, T. Ito 
01 Nov 1990-IEEE Transactions on Electron Devices
41 Citations
The results show the possibility of fabricating transistors with a very thin, highly doped base.
Journal Article•DOI
Fabrication of ultrashort T gates using a PMMA/LOR/UVIII resist stack
Y. Chen, Douglas Macintyre, X. Cao, E. Boyd, David A. J. Moran, Helen McLelland, Martin Christopher Holland, C.R. Stanley, Iain G. Thayne, Stephen Thoms 
10 Dec 2003-Journal of Vacuum Science & Technology B
28 Citations
We believe these are the fastest transistors of their kind in the world.
Journal Article•DOI
A transistor digital fast multiplier with magnetostrictive storage
G.B.B. Chaplin, R.E. Hayes, A.R. Owens 
01 Jul 1955
8 Citations
It is concluded that transistors of the types at present available are well suited to computer circuits and that both the construction and maintenance of the apparatus are facilitated by their use.
Journal Article•DOI
Inkjet printing of transparent, flexible, organic transistors
Laura Basiricò, Piero Cosseddu, Beatrice Fraboni, Annalisa Bonfiglio 
01 Dec 2011-Thin Solid Films
102 Citations
Electrical output characteristics of both kinds of devices are reported, demonstrating that the performances of our devices may be compared to those of transistors fabricated employing different realization techniques.

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