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It is able to obtain transistor networks with transistor count near to the best case of other methods presented in the literature.
In addition, good transistor properties are obtained.
Proceedings ArticleDOI
Mo Liu, Craig S. Lent 
15 Sep 2003
20 Citations
This paradigm provides a possible route to transistor-less electronics at the nano-scale.
Open accessProceedings ArticleDOI
Hai Zhou, Adnan Aziz 
01 May 2000
11 Citations
Among them, pass transistor logic (PTL) circuits give great promise.
The thin film transistor shows an excellent characteristic.
Our calculations show that such functional devices have superior sensor properties and transistor properties.
Journal ArticleDOI
Mikko H. Lipasti, J.P. Shen 
01 Sep 1997-IEEE Computer
76 Citations
Based on their research at Carnegie Mellon University, the authors argue for billion-transistor uniprocessors.
This technique is applicable to other transistor devices and circuits.
The transistor in a high vacuum outperforms that in air.
Also, a new transistor architecture might be required that deviates from the planar structure.
When considering the invention of the transistor, the authors note that the work of Bardeen and Brattain was really a discovery not an invention.
Journal ArticleDOI
01 Mar 2007-Research Policy
405 Citations
It shows that this process – “invention” – has a certain logical structure common to all cases.
The measurements reveal that the fabricated devices show the desired transistor characteristics.

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What is the quantum confinement effect?
10 answers
The quantum confinement effect is a phenomenon observed in semiconductor materials, where the electronic and optical properties of the material are significantly altered due to the spatial confinement of charge carriers (electrons and holes) within dimensions that are comparable to the de Broglie wavelength of the carriers. This confinement leads to the discretization of energy levels, a departure from the continuous energy bands found in bulk materials. In practical terms, quantum confinement can manifest in various forms depending on the dimensionality of the confinement: in one dimension as quantum wells, in two dimensions as quantum wires, and in three dimensions as quantum dots (QDs). Each form of confinement restricts the motion of charge carriers in one or more dimensions, leading to distinct changes in the material's physical properties. For instance, quantum dots, which exhibit three-dimensional confinement, show size-dependent optical and electronic properties because the energy levels of the dots can be tuned by changing their size. This tunability is crucial for applications in near-field thermal radiation, light-emitting diodes (LEDs), and thin-film transistors. Quantum confinement effects are not only limited to altering electronic and optical properties but also influence the thermodynamic behavior of materials. For example, specific heat can exhibit unique features under spatial confinement, indicating phase transitions at certain temperatures. Moreover, the effect plays a significant role in enhancing the performance of semiconductors by tuning defect levels through strategies like hydrogen doping in nanostructures, thereby optimizing their electronic applications. Furthermore, quantum confinement can lead to the observation of quantum confinement effects in disordered materials, such as amorphous thin-film transistors, where it affects the field-effect mobility and device characteristics. It also impacts the linewidth broadening in metal halide perovskites, suggesting that quantum confinement is not a limiting factor in achieving ultrahigh color purity in next-generation LEDs. Additionally, the effect is evident in the blue shift of energy gaps in thin films, confirming its presence through spectroscopy experiments. In summary, the quantum confinement effect is a fundamental phenomenon that significantly influences the physical properties of nanostructured materials, with wide-ranging implications for electronic, optical, and thermodynamic applications.
What is the number of studies on memcapacitor emulator in the literature?
5 answers
There are five studies on memcapacitor emulators in the literature. These studies propose innovative designs for memcapacitor emulators using various components such as current feedback amplifiers, analog multipliers, resistors, and capacitors. The emulators are designed to operate at high frequencies, exhibit non-volatility behavior, and are robust against mismatch and process variations. Additionally, the studies demonstrate the expandability of memcapacitor circuits using memristors and mutators, enabling the construction of complex circuit configurations. The proposed emulators have been validated through simulations, experimental verifications, and post-layout analyses, showcasing their efficiency, low power consumption, and applicability in practical applications like neuromorphic computing.
What happened to the portions of the volcano that were removed?
5 answers
Portions of the volcano that were removed during clean-up efforts after eruptions or due to debris avalanches underwent various transformations. In the case of volcanic clean-up efforts, tephra deposits were removed from affected areas, with uncertainties in estimating the volume and duration of clean-up operations due to observational errors and natural variance in deposit thickness. On the other hand, debris avalanches led to the permanent alteration of the landscape, with the debris avalanche from Mount Ruapehu in New Zealand resulting in the isolation of the river catchment from the volcano due to incision by the Whangaehu River and regional faulting, forming a distinctive plateau in the valley. These removal processes and subsequent landscape changes highlight the dynamic interactions between volcanic events and the surrounding environment.
How dielectric film which under the gate flate plate of GaN affect the TDDB?
5 answers
The dielectric film under the gate field plate of GaN significantly impacts Time-Dependent Dielectric Breakdown (TDDB). Stress variations in the film affect the electric characteristics of GaN transistors, with compressive films increasing isolation leakage and tensile films increasing gate leakage. The intense electric field on the gate dielectric causes trapping of electrons, leading to transient shifts in threshold voltage, known as Bias-Temperature Instability (BTI), and the formation of defects that can eventually short the dielectric, causing TDDB. Utilizing high-quality dielectrics like Al2O3 can mitigate trap states and enhance device performance, offering promising TDDB stability in GaN transistors. Understanding and optimizing the dielectric film properties are crucial for improving TDDB characteristics in GaN-based devices.
How nitride film or oxide film which under the gate flate plate of GaN affect the TDDB?
5 answers
The nitride or oxide film under the gate flat plate of GaN significantly impacts Time-Dependent Dielectric Breakdown (TDDB) characteristics. Research on GaN Metal-Insulator-Semiconductor Field-Effect Transistors (MIS-FETs) with Al2O3 gate dielectric demonstrates stable forward gate bias TDDB behavior, showcasing enhanced E-mode characteristics and low gate leakage, with no breakdown observed up to 15V at room temperature. Additionally, investigations on AlGaN/GaN MIS-HEMTs reveal TDDB concerns in the OFF state, emphasizing the necessity to consider trapping effects for accurate breakdown voltage estimation. Furthermore, a proposed TDDB testing device for gate oxide layers in integrated circuits offers a method to determine breakdown field strength, acceleration factors, and service life calculations based on breakdown time and field strength data.
How dielectric film property effect the TDDB of GaN device?
5 answers
The dielectric film properties significantly impact the Time-Dependent Dielectric Breakdown (TDDB) of GaN devices. Dielectric breakdown mechanisms determine the Weibull distribution shape and mean time to failure scale factor, influenced by buffer traps and percolation path establishment. Dielectric breakdown in GaN devices is a critical concern due to the formation of defects under intense electric fields, leading to the creation of conducting paths that shorten device lifetimes. Studies on GaN Metal-Insulator-Semiconductor devices show that the gate dielectric material, such as ALD Al2O3, affects TDDB stability under forward bias, with implications for device reliability and longevity. Additionally, investigations on AlGaN/GaN Metal-Insulator-Semiconductor devices reveal that TDDB under AC stress exhibits longer breakdown times compared to DC stress, influenced by gate stack dynamics and recovery voltage levels.
What are good papers that explain the delta method of minimizing offset thermal EMFs?
5 answers
The delta method for minimizing offset thermal EMFs is well explained in the paper by Rodenbeck et al., where they introduce a technique called "delta modulation" (DM) to improve the sensitivity of RF subsamplers in radar and coherent receiver applications. This method involves feeding the time-average output of a monobit analog-to-digital converter (ADC) back to the ADC input with opposite polarity to correct for aggregate DC offsets, enhancing ADC sensitivity. The paper demonstrates the effectiveness of analog and digital DM circuits in correcting output quantization imbalance, even under varying temperature conditions, and improving baseband spectrum quality for realistic radar applications. The DM technique does not impact ADC linearity, as confirmed through two-tone testing.
Why there was a need of deep ultra violet transparent conducting oxides?
4 answers
The need for deep ultraviolet (DUV) transparent conducting oxides (TCOs) arises from the demand for highly efficient optoelectronic devices operating in the DUV spectrum. Various materials have been explored to meet this need. Rutile Sn1–xGexO2 (SGO) thin films, La-doped SrSnO3 (SLSO) films, and Si-doped Ga2O3 (SGO) thin filmshave been developed as promising candidates for DUV-TCOs due to their high conductivity, transparency, and wide band gaps. These materials exhibit excellent electrical, structural, and optical properties, making them suitable for applications in DUV-LEDs, photovoltaic cells, and other optoelectronic devices requiring transparency in the DUV region. The advancements in DUV-TCOs pave the way for enhanced performance and efficiency in next-generation optoelectronics and semiconductor devices.
How transparent oxides can be used as gate dielectric?
5 answers
Transparent oxides can be utilized as gate dielectrics in various applications. For instance, in the study by Alshammari et al., a novel process was developed to fabricate thin film transistors (TFTs) using a binary oxide, Hf x Zn1- x O2- δ (HZO), for all transistor layers, including the gate and dielectric layers. This approach allowed for tuning the electronic properties of the oxide from conducting to insulating by adjusting the chemical precursors' flow ratio. Additionally, the work by ViolBarbosa et al. demonstrated that ionic liquid gating can induce a metallic phase in insulating films of WO3, altering the material's conductivity while maintaining transparency in the visible range. These studies highlight the versatility of transparent oxides in serving as gate dielectrics with tunable electronic properties for various electronic devices.
What is the difference between constant voltage and constant current in gel electrophoresis?
5 answers
In the context of gel electrophoresis, the difference between constant voltage and constant current lies in their control mechanisms and adaptability. Constant current control in microchip electrophoresis directly indicates the velocity of the electroosmotic flow (EOF), making it more convenient than constant voltage control. Constant voltage electromigration testing offers advantages over constant current testing for materials with varying geometries, while the benefits are minimal for properly produced materials. A constant current circuit with high breakdown-voltage transistors is designed for high voltage circuits with low manufacturing costs. Additionally, a constant current constant voltage circuit stabilizes voltage and controls levels effectively, featuring strong anti-interference capabilities. These findings highlight the nuanced differences and applications of constant voltage and constant current in gel electrophoresis.
Is there an article about a led-array with individually addressable electrodes?
5 answers
Yes, there are multiple articles discussing LED arrays with individually addressable electrodes. One article presents a novel approach using GaN micro-light-emitting diodes (LEDs) with individually addressed n-electrodes, allowing for faster modulation and compatibility with NMOS transistor-based drivers. Another study introduces GaN-based micro-LED arrays with a reversed electrode structure, featuring a common p-electrode and individually addressable n-electrodes, enabling high-performance characteristics and compatibility with NMOS drivers for faster modulation. Additionally, a different research paper describes the fabrication of individually addressable GaN microdisk LED arrays, showcasing ultrahigh resolution and stable operation in free-standing and flexible forms. These articles collectively highlight advancements in LED array technology with individually addressable electrodes for various applications.