scispace - formally typeset
Search or ask a question

What is GM in FET amplifier? 

Breakdown voltage
Power-added efficiency
Field-effect transistor
Amplifier
RF power amplifier

Answers from top 9 papers

More filters
Papers (9)Insight
Proceedings Article•DOI
Ku-band 10 W high efficiency HJFET power amplifier
K. Matsunaga, Yasuhiro Okamoto, Masaaki Kuzuhara 
16 May 1995
6 Citations
This is the highest PAE, gain and output power combination achieved by a single FET power amplifier at this frequency.<<ETX>>
Journal Article•DOI
A 12-GHz, 12-W HJFET amplifier with 48% peak power-added efficiency
K. Matsunaga, Yasuhiro Okamoto, M. Kuzuhara 
01 Nov 1995-IEEE Microwave and Guided Wave Letters
9 Citations
To our knowledge, this is the highest PAE, gain and output power combination achieved by a single FET power amplifier at this frequency.
Proceedings Article•DOI
A PVT independent subthreshold constant-G m stage for very low frequency applications
V. Agarwal, Sameer Sonkusale 
18 May 2008
8 Citations
We propose a new topology for a PVT (process, voltage & temperature) independent gm stage with constant gm biasing circuit operating in sub-threshold region.
Proceedings Article•DOI
An X-band internally-matched GaN HEMT amplifier with compact quasi-lumped-element harmonic-terminating network
Hiromitsu Uchida, Hifumi Noto, Koji Yamanaka, Masatoshi Nakayama, Yoshihito Hirano 
17 Jun 2012
10 Citations
It is a parallel connection of an inter-digital capacitor and a transmission line, and its compactness is suitable for packaged internally-matched FET amplifiers.
Journal Article•DOI
Keratinocyte derived T-cell growth factor (KTGF) is identical to granulocyte macrophage colony stimulating factor (GM-CSF)
Thomas S. Kupper, Frank Lee, David L. Coleman, Chodakewitz Jeffrey A, P M Flood, Mark C. Horowitz 
01 Aug 1988-Journal of Investigative Dermatology
93 Citations
We conclude that KTGF is identical to GM-CSF.
Journal Article•DOI
An X-band high-power amplifier using SiGe/Si HBT and lumped passive components
Zhenqiang Ma, Saeed Mohammadi, Liang-Hung Lu, P. K. Bhattacharya, Linda P. B. Katehi, Samuel A. Alterovitz, George E. Ponchak 
01 Jul 2001-IEEE Microwave and Wireless Components Letters
10 Citations
To our knowledge, this is the first MMIC X-Band power amplifier using SiGe/Si HBTs.
Journal Article•DOI
Large-Area In-Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET)
Dong Ji, Chirag Gupta, Anchal Agarwal, Silvia H. Chan, Cory Lund, Wenwen Li, Stacia Keller, Umesh K. Mishra, Srabanti Chowdhury 
08 Mar 2018-IEEE Electron Device Letters
56 Citations
These results show the potential of the OG-FET in power conversion applications.
Proceedings Article•DOI
Field-modulating plate (FP) InGaP MESFET with high breakdown voltage and low distortion
A. Wakejima, Kazuki Ota, K. Matsunaga, Walter Contrata, Masaaki Kuzuhara 
20 May 2001
9 Citations
These results show the developed FET is suited for applications in the next generation cellular base station.
Journal Article•DOI
An improved FET model for computer simulators
Anthony E. Parker, D.J. Skellern 
01 May 1990-IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
14 Citations
The expression gives the designer a more accurate FET model which is consistent for both large- and small-signal simulations.

Related Questions

What are properties of good FETs?5 answersGood FETs (Field-Effect Transistors) have several desirable properties. They should have high linearity characteristics, such as high input/output intercept points (IIP3/OIP3) and low intermodulation distortion (IM3). Additionally, they should maintain a high transconductance and high electron velocity in the conducting channel. Good FETs should also have good manufacturability, yield, and immunity to bias-point drift. The channel/dielectric interfaces should have low densities of interfacial traps, leading to excellent device characteristics at room temperature, including near-Boltzmann-limit subthreshold swings, high carrier mobility, and negligible scanning hysteresis. The conduction type of FETs should be dependent on the work function of the contact metal, indicating weak Fermi level pinning at the metal/nanotube interface. Chemical doping can be effective in reducing channel resistance and contact resistance in FETs. The addition of an undoped shell to a heavily doped core in junctionless MOSFETs enables normally-off operation, high charge, excellent mobility, and very high current drive.
How can we design an amplifier with CNTFETs?5 answersTo design an amplifier with CNTFETs, a semi-empirical compact model for CNTFETs can be implemented in SPICE or Verilog-A language of ADS. One example of a CNTFET amplifier design is a common-source configuration. Another example is a sense amplifier-based two-stage flip-flop working in the sub-threshold region. The proposed circuit in this design uses 16 CNTFETs and has a significantly low clock load, reducing power consumption. The design also achieves improvements in propagation delay and power delay product. Simulation and verification of the theoretical results can be done using HSPICE software. By following these design approaches, it is possible to create amplifiers using CNTFETs for both analog and digital applications.
How to build a Mosfet amplifier?10 answers
How to connect Yamaha mg10xu to amplifier?8 answers
What is amplifier in telecom?8 answers
Which Mosfet is best for audio amplifier?19 answers

See what other people are reading

Can proton become plasma?
5 answers
Yes, protons can be utilized to create plasma through proton-driven plasma wakefield acceleration experiments. These experiments involve sending high-energy proton beams through field-ionized plasma, leading to the formation of a plasma wake that can accelerate electron beams to high energies. The Advanced Wakefield Experiment (AWAKE) at CERN has been at the forefront of such research, aiming to demonstrate the acceleration of electrons to GeV energies using self-modulated proton bunches in a plasma wakefield. Additionally, advancements in plasma generation technology, such as non-cesiated H− plasma generators, have been developed to efficiently drive plasma using external RF antennas, further expanding the possibilities of utilizing protons to create and manipulate plasma.How does the ultrasonic metal atomizer affect the formation of a thin liquid layer?
5 answers
The ultrasonic metal atomizer plays a crucial role in the formation of a thin liquid layer by utilizing high-frequency sound vibrations to atomize the liquid into fine droplets. This process is achieved through the conversion of electrical input into mechanical energy at the same frequency, resulting in the creation of a mist spray with reduced overspray due to the droplets settling on the substrate. Additionally, the design of ultrasonic atomizers, such as the Fourier amplifier and microfabricated silicon-based nozzles, focuses on generating uniform and fine droplets through the resonance of capillary surface waves at designated frequencies. By optimizing the liquid feeding rate and utilizing innovative designs like the single drop dispenser, these atomizers can efficiently produce microdroplets without the need for additional pumps, enhancing the atomization process.What are the minimum mask steps required to make a functional pMOS?
5 answers
To create a functional pMOS transistor with reduced masking steps, the process involves utilizing a minimum number of critical masks. By forming conductive gate/insulator layer stacks on different conductivity portions of a semiconductor substrate and implementing disposable outer sidewall spacers, heavy and light source/drain implantations of opposite conductivity types can be performed with only two critical masks, reducing production costs and duration while increasing manufacturing throughput. Additionally, a method involves forming Sigma-shaped grooves in sidewalls and filling them with crushing stress materials to enhance the transistor's channel region. This streamlined approach allows for the efficient formation of pMOS transistors with improved performance.What are the remaining unsolved problems of digital predistortion?
4 answers
Remaining challenges in digital predistortion (DPD) include addressing channel-dependent variations in MIMO transmitters, reducing complexity in NN-based DPD techniques for multiple paths, managing non-linearity in high-power amplifiers for Narrowband IoT applications, overcoming computational complexity in 2D polynomial-based DPD for dual-band transmitters, and mitigating performance issues due to modeling errors and measurement noise in IDLS predistortion systems. These challenges encompass issues such as adapting DPD to varying channel conditions, enhancing DPD performance while reducing complexity, handling non-linearity in high-power amplifiers, managing computational complexity in multi-band transmitters, and addressing biases introduced by measurement noise and modeling errors in IDLS systems.Doherty power amplifier 3.3 - 3,8 GHz
5 answers
A Doherty power amplifier (DPA) operating in the 3.3 - 3.8 GHz range is not explicitly discussed in the provided contexts. However, the contexts do provide valuable insights into DPAs operating at higher frequencies. For instance, a 2.4 GHz DPA based on voltage combining in 22 nm CMOS achieved high efficiency and linearity, with a peak power added efficiency (PAE) of 42.5% and a PAE of 25.2% at 6 dB back-off power. Additionally, a millimeter-wave (mmWave) three-way Doherty output network was implemented at 38 GHz for 5G applications, achieving power-added efficiency (PAE) of 13.7%/11.0% at 9.5-/11.5-dB back-off. While specific details for 3.3 - 3.8 GHz are not provided, these examples showcase the efficiency and performance optimization strategies that can be applied to DPAs in different frequency ranges.How GaN Field-Plate dielectric affect the TDDB?
5 answers
The presence of a field plate in GaN devices significantly impacts Time-Dependent Dielectric Breakdown (TDDB). Field plates enhance breakdown voltage, as evidenced by a GaN HEMT with a field plate exhibiting a breakdown voltage of 292V compared to 98V without a field plate. Additionally, the use of a field plate in GaN MIS-FETs contributes to robust forward gate TDDB stability, allowing for an extrapolated operating gate voltage of 7V or 8.8V after 10 years with 1% failure rate. However, the introduction of a field plate can lead to reduced frequency performance, with field-plated GaN HEMTs showing lower cut-off and maximum frequencies compared to those without field plates. Understanding the impact of field plates on TDDB is crucial for optimizing the reliability and performance of GaN devices.What is paschen law for AC?
5 answers
Paschen's law for AC is a fundamental principle that describes the breakdown voltage between two electrodes in a gas-filled gap as a function of the product of gas pressure and the distance between the electrodes. This relationship is crucial for understanding electrical discharges in gases. Various studies have explored Paschen's law under different conditions. Experimental investigations have shown deviations from Paschen's law at elevated temperatures, leading to the proposal of theoretical corrections like the Peek and Dumbar corrections. Additionally, studies have highlighted the importance of considering the electrode geometry, such as the d/r ratio, in determining the breakdown voltage, leading to the concept of modified Paschen's law. Furthermore, a novel representation of Paschen's law based on the product of gas mass density and electrode gap distance has been proposed to account for temperature and pressure variations in estimating dielectric strength.Is paschen law different for AC and DC?
5 answers
Paschen's law, which describes gas breakdown voltage, differs for AC and DC discharges. For DC discharges, Paschen's law relates breakdown voltage to gas pressure and electrode distance, with deviations observed at higher d/R ratios due to plasma-wall interactions. In contrast, for high-pressure gas switches in pulsed power systems, breakdown voltages deviate significantly from theoretical Paschen curves at high pd values, showing inconsistency across different gap spacings and pressures. Additionally, modifications to Paschen's law have been proposed to consider electron diffusion and mobility, as well as plasma-wall interactions, affecting breakdown voltages in different gas types and electrode distances. Therefore, while Paschen's law is fundamental for DC discharges, its application and modifications vary for different experimental setups and gas types.Is there a paper with an nmr spectrum of pae?
5 answers
Yes, there is a paper that discusses the structural characterization of common Polyamic Acid (PAA) polymers, including their synthesis and analysis using 1D and 2D NMR techniques, supported by ATR-FTIR methods. The study highlights the importance of the choice of diamine and dianhydride sources, as well as the solvent, in determining the cis-/trans-binding of monomers, average molecular weight, and intramolecular interactions in PAA polymers. This research provides valuable insights into the structural properties of PAA, which is crucial for further modifications and applications in various fields such as sensors, flexible electronics, drug delivery, and food packaging. The NMR and FTIR analyses offer a comprehensive understanding of the chemical composition and characteristics of PAA polymers, aiding in their optimization for specific uses.How field-plate dielectric affect the TDDB of GaN-HEMTs?
5 answers
Field plates in GaN-HEMTs play a crucial role in enhancing breakdown voltage and reducing parasitic effects. Different field plate techniques, such as gate, source, and gate-source field plates, have been studied to optimize device performance. Optimized field plate structures like T-gate HEMTs with dual discrete field plates (DDFP-HEMT) and single discrete field-plate (SDFP-HEMT) have shown improved breakdown characteristics and current collapse suppression, leading to higher off-state breakdown voltages and reliability enhancement. Additionally, utilizing artificial neural networks (ANN) and particle swarm optimization (PSO) algorithms can efficiently optimize field plate structures like gate-source dual field plates to predict breakdown voltage and improve breakdown performance with high accuracy. These advancements in field plate technology contribute significantly to enhancing the reliability and performance of GaN-HEMTs under electrical stress.What's the key characteristics of field-plate dielectric that affect the TDDB of GaN-HEMTs?
5 answers
The key characteristics of the field-plate dielectric that significantly impact the Time-Dependent Dielectric Breakdown (TDDB) of GaN-HEMTs include the stress level and composition of the dielectric film. Stress variations in the SiN field-plate dielectric film, ranging from compressive to tensile, influence isolation leakage and gate leakage current in AlGaN/GaN HEMTs. Additionally, the incorporation of a SiO2 pocket around the field plate edge in GaN-HEMTs results in a substantial reduction in electric field intensity, carrier temperature, and self-heating, leading to improved device performance and reliability. Furthermore, optimized field plate structures, such as T-gate AlGaN/GaN HEMTs with dual discrete field plates, demonstrate enhanced breakdown characteristics and current collapse suppression, contributing to improved TDDB behavior in GaN-HEMTs.