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Journal ArticleDOI
Kaiping Tai, Ke Sun, Bo Huang, Shen J. Dillon 
11 Apr 2014-Nanotechnology
15 Citations
The approach represents a new class of nanowire growth methodology that may be applied to a broad range of systems.
By controlling various aspects of nanowire growth, these methods will enable their efficient and economical incorporation into devices.
The fundamental differences between these modes have important implications for control of nanowire growth.
These factors have instructional significance for nanowire synthesis and research of their growth process in the future.
It reproduces quantitatively all salient features of our experimental study, namely the variations of nanowire growth rate with As flux, temperature, and nanowire radius.
The mechanism established from our experiments successfully predicts the nanowire growth under a broad range of conditions and also predicts the nanowire growth on other metals to provide guidance to future progress in nanowire synthesis.
This provides a quantitative evaluation of a major contribution to the supply of atoms to the growing nanowire, which can be directly incorporated in growth models.
We will show that nanowire formation provides a unique window into the fundamentals of crystal growth as well as an opportunity to fabricate precisely controlled structures for novel applications.

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