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What is the reason for connecting a capacitor in parallel with RS in FET amplifiers? 

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It allows extremely compact gain stages to be designed which resemble single FET distributed amplifiers with reactive output matching networks.
This allows low power switched capacitor filters without operational amplifiers and with a frequency capability approaching the megahertz range.
The isolated design also allows greater flexibility in circuit design because the capacitor is not required to be a capacitor to ground.
The advantage of including the effects caused by FET parasitics in a newly defined simple unilateral FET circuit to be utilized in the conventional distributed amplifier design procedure allows an accurate prediction of the low-frequency gain and the 3-dB cutoff frequency.
Furthermore, a large K value permits bipolar op-amps to achieve lower noise than FET amplifiers even for capacitive signal sources, provided amplifier biasing is guaranteed.
The merger of Bipolar and FET, or BiFET, gives an additional degree of freedom in the design of advanced power amplifiers independent of a silicon controller.
Using a single Miller compensation capacitor in three-stage amplifiers can significantly reduce the total capacitor value, and therefore, the overall area of the amplifiers without influencing their stability.
Since they possess similar attractive features with respect to capacitance spread, total capacitor area, and speed requirements of the amplifiers, they are also attractive for integration.
This latter effect could allow for the development of higher power amplifiers with larger cross-sectional areas.
This is a clear sign of the proposed amplifiers’ high performance.

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