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What metal is used in transistors?

Electron mobility

Contact resistance

Graphene nanoribbons

Field-effect transistor

Strained silicon

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Papers (6)	Insight
Journal Article•DOI Nanoimprint assisted inkjet printing to fabricate sub-micron channel organic field effect transistors Lichao Teng, Matthias Plötner, Alexander Türke, B. Adolphi, Andreas Finn, Robert Kirchner, Wolf-Joachim Fischer - Show less +6 more 01 Oct 2013-Microelectronic Engineering 19 Citations	This emphasizes the importance of the metal-semiconductor contact especially for short channel organic transistors.
Journal Article•DOI Layered structures based on hydrogenated graphene with high carrier mobility I. A. Kotin, Irina V. Antonova, R. A. Soots, Vladimir A. Volodin, Vladimir A. Volodin, V. Ya. Prinz - Show less +5 more 15 Oct 2013-Nanotechnologies in Russia 5 Citations	The material has high potential for use in electronics, especially in the production of field-effect transistors.
Journal Article•DOI Fabrication and anomalous transport properties of an Sb/Bi segment nanowire nanojunction array. Yuze Zhang, Li Li, Guanghai Li - Show less +2 more 01 Oct 2005-Nanotechnology 16 Citations	These features might find application in sub-100 nm metal-semiconductor field effect transistors.
Journal Article•DOI n‐channel insulated‐gate field‐effect transistors in Hg1−xCdxTe with x=0.215 Yael Nemirovsky, S. Margalit, I. Kidron - Show less +2 more 15 Mar 1980-Applied Physics Letters 23 Citations	The transistors may be used as switching and amplifying elements for monolithic structures in HgCdTe.
Proceedings Article•DOI A 45nm Logic Technology with High-k+Metal Gate Transistors, Strained Silicon, 9 Cu Interconnect Layers, 193nm Dry Patterning, and 100% Pb-free Packaging Kaizad Mistry, C. Allen, C. Auth, B. Beattie, Daniel B. Bergstrom, M. Bost, M. Brazier, M. Buehler, Annalisa Cappellani, R. Chau, C. H. Choi, G. Ding, K. Fischer, Tahir Ghani, R. Grover, W. Han, D. Hanken, M. Hattendorf, J. He, J. Hicks, R. Huessner, D. Ingerly, Pulkit Jain, R. James, L. Jong, Subhash M. Joshi, C. Kenyon, K. Kuhn, K. Lee, Huichu Liu, J. Maiz, B. Mclntyre, P. Moon, J. Neirynck, S. Pae, C. Parker, D. Parsons, Chetan Prasad, L. Pipes, M. Prince, Pushkar Ranade, T. Reynolds, J. Sandford, Lucian Shifren, J. Sebastian, J. Seiple, D. Simon, Swaminathan Sivakumar, Pete Smith, C. Thomas, T. Troeger, P. Vandervoorn, S. Williams, K. Zawadzki - Show less +53 more 01 Dec 2007 973 Citations	A 45 nm logic technology is described that for the first time incorporates high-k + metal gate transistors in a high volume manufacturing process.
Journal Article•DOI Large-area WSe2 electric double layer transistors on a plastic substrate Kazuma Funahashi, Jiang Pu, Ming-Yang Li, Lain-Jong Li, Yoshihiro Iwasa, Yoshihiro Iwasa, Taishi Takenobu - Show less +6 more 01 Jun 2015-Japanese Journal of Applied Physics 14 Citations	These transistors exhibited ambipolar operation and an ON/OFF current ratio of ~104, demonstrating chemically grown WSe2 transistors on plastic substrates for the first time.

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