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What's the best transistor radio? 

Field-effect transistor
Wafer
Transistor
Heterojunction bipolar transistor
MOSFET

Answers from top 9 papers

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Papers (9)Insight
Journal Article•DOI
SiGe heterojunction bipolar transistor with 213 GHz fT at 77 K
Nicolas Zerounian, Frédéric Aniel, R. Adde, Andreas Gruhle 
08 Jun 2000-Electronics Letters
10 Citations
The fT of 213 GHz is the highest value yet reported for any silicon-based bipolar transistor.
Journal Article•DOI
Transport Characteristics of Mesoscopic Radio-Frequency Single Electron Transistor
Adel H. Phillips, N. A. I. Aly, Khaled Kirah, H. E. El-Sayes 
01 Jan 2008-Chinese Physics Letters
5 Citations
Our results show that the present device operates as a radio-frequency single electron transistor.
Proceedings Article•DOI
A complementary BiCMOS technology with high speed npn and pnp SiGe:C HBTs
Bernd Heinemann, R. Barth, D. Bolze, J. Drews, P. Formanek, O. Fursenko, M. Glante, K. Glowatzki, A. Gregor, U. Haak, W. Hoppner, D. Knoll, R. Kurps, Steffen Marschmeyer, S. Orlowski, Holger Rucker, Peter Schley, D. Schmidt, R. Scholz, Wolfgang Winkler, Yuji Yamamoto 
08 Dec 2003
47 Citations
The high speed performance of the pnp transistors surpasses the best reported values of this transistor type substantially.
Journal Article•DOI
High-Performance Thin-Film Transistors in Disordered and Poor-Quality Semiconductors
John M. Shannon, F. Balon 
17 Apr 2007-IEEE Transactions on Electron Devices
23 Citations
Compared with the field-effect transistor, a source-gated transistor more nearly meets these requirements.
Open access•Journal Article•DOI
L g = 25 nm InGaAs/InAlAs high-electron mobility transistors with both f T and f max in excess of 700 GHz
Hyeon-Bhin Jo, Do-Young Yun, Ji-Min Baek, Jung-Hee Lee, Tae-Woo Kim, Dae-Hyun Kim, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki 
01 May 2019-Applied Physics Express
22 Citations
To the best of the authors' knowledge, this is the first demonstration of a transistor with both f T and f max over 700 GHz on any material system.
Proceedings Article•DOI
A three-step procedure utilizing only two test structures for deembedding transistor from on-wafer S-parameter measurements
Maciej Tomasz Myslinski, Wojciech Wiatr, Dominique Schreurs 
17 May 2004
11 Citations
Experimental results obtained for a silicon RF bipolar transistor demonstrate validity of the method.
Journal Article•DOI
Device performance of transistors with high-/spl kappa/ dielectrics using cross-wafer-scaled interface-layer thickness
Barry O'Sullivan, Vidya Kaushik, Lars-Ake Ragnarsson, B. Onsia, N. Van Hoornick, E. Rohr, S. DeGendt, M.M. Heyns 
26 Jun 2006-IEEE Electron Device Letters
15 Citations
The transistor results are promising with good mobility values and drive current.
Journal Article•DOI
Study of N-channel MOSFETs with an enclosed-gate layout in a 0.18 /spl mu/m CMOS technology
Li Chen, Douglas Gingrich 
15 Aug 2005-IEEE Transactions on Nuclear Science
35 Citations
The transistor design could provide the basis for low-noise radiation-tolerant circuits.
Journal Article•DOI
Performance of electronic devices submitted to X-rays and high energy proton beams
Marcilei A. G. Silveira, K. H. Cirne, K. H. Cirne, R. B. B. Santos, Salvador Pinillos Gimenez, Nilberto H. Medina, Nemitala Added, Manfredo Harri Tabacniks, M. D. L. Barbosa, L. E. Seixas, Waldjânio de Oliveira Melo, J. A. De Lima 
15 Feb 2012-Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms
14 Citations
We concluded the circular-gate transistor is more tolerant to radiation than the rectangular-gate transistor.

Related Questions

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