scispace - formally typeset
Search or ask a question

What type of material is a transistor made of? 

Answers from top 8 papers

More filters
Papers (8)Insight
Silicon carbide (SiC) has superior material properties appropriate for transistor applications at high frequency, high voltage, high power and high temperature.
Collectively, this work solidifies our knowledge on the material type, EDL gating mechanism and applicability of nature bio-material gated transistors.
This environmental impact study demonstrates the large influence of transistor material composition for those analyzed herein.
It is shown that the influence of stress on the current gain of a transistor depends on the strain distribution in the material.
The transistor I–V characteristics are very well described considering disordered material properties within a self-consistent transistor model.
We show that the transistor effect can be achieved easily when this material has its critical temperature between the two blackbody temperatures.
The theoretical results provide unique insight into the effects of geometrical and material parameters on the electrical properties of the transistor.
Ultimately, the model presented allows more accurate measurement of material properties via transistor characterization.

See what other people are reading

Do i need to combust the glass fiber filter before usage?
5 answers
Yes, in some cases, it is necessary to combust the glass fiber filter before usage. For instance, in the preparation of ECR glass fiber filter cloth, the filter base cloth is passed through hot water for hot cleaning and then through hot air for combustion, enhancing its resistance to strong-acid substances and improving its strength and filtering efficiency. Additionally, silicon carbide filters require calcination at high temperatures in a nonoxidative atmosphere to form a metallized electrode, which aids in burning out carbon particles stuck on the filter to regenerate it before use. However, not all glass fiber filters require combustion; some are designed to resist high temperatures, acid, and alkali without the need for pre-combustion treatment.
Why does a chlorinated glucose derivative with axial chlorines ring flip?
5 answers
The chlorinated glucose derivative undergoes ring flipping due to the presence of axial substituents, which induce conformational changes. Specifically, the axial-rich form of the pyranose ring, with bulky silyl-protecting groups on adjacent trans-diols, favors axial conformations, leading to ring flipping. This conformational change is crucial for achieving stereoselective glycosylation, as seen in the β-selective reaction induced by the axial-rich glucosyl donor. Additionally, the presence of axial chlorines in the molecule can lead to a shift from an amorphous to a crystalline form, driven by alkane-induced pore formation and weak interactions like phenolic OH···Cl hydrogen bonds. These interactions play a role in the reversible phase transition observed in the material.
What are the current advancements in the development of additive manufacturing techniques for carbon fiber reinforced polymers (CFRP)?
5 answers
Current advancements in additive manufacturing techniques for carbon fiber reinforced polymers (CFRP) include the development of novel systems like conformal CFRP-AM, which leverages multi-DoF motion to fabricate grid-stiffened shell structures with improved mechanical performance. Additionally, the Rapid Interlayer Curing Assisted (RICA) 3D printing strategy enables the fabrication of thermoset composites with any commercially available resin and fibers, achieving high mechanical properties. Furthermore, a unique additive manufacturing approach involves coating continuous carbon fibers with polycarbosilane and coextruding them with SiC ink to produce high-strength Cf/SiC composites with enhanced flexural strength and density. These advancements showcase the potential for AM to revolutionize the production of CFRP by offering design freedom, improved mechanical properties, and customized structures.
What influence the thickness of premixing layer in reactive multilayers?
5 answers
The thickness of the premixing layer in reactive multilayers is influenced by factors such as the density of initiating sites and the reactivity of the monomer. Additionally, the thickness ratio of the constituent layers and the intermixed region plays a crucial role in determining the burning velocity and range of flammability in self-propagating high-temperature synthesis processes. Furthermore, the rate of heat generation at the reacting interfaces compared to the rate of heat dissipation can lead to explosive silicidation in multilayer films, affecting the thickness of the premixing layer. These factors collectively impact the behavior and properties of reactive multilayers, highlighting the intricate interplay between various parameters in controlling the thickness of the premixing layer.
What are the challenges in mmWave communication?
5 answers
Challenges in millimeter-wave (mmWave) communication include susceptibility to blockage, high attenuation against physical objects and interference incidents due to user mobility, and the need for high gain directional antennas to combat attenuation. Mobility introduces challenges and opportunities to mmWave applications, impacting system performance in various scenarios like indoor WLAN, cellular access, V2X, HST, UAV, and space-air-ground-sea communication. To address these challenges, solutions such as intelligent reflecting surfaces (IRS) for coverage improvement, hybrid precoders, and passive precoders for spectral efficiency enhancement are proposed. Predicting blockage and interference incidents in advance through fingerprint collection and matching helps mitigate issues and improve overall performance in typical indoor scenarios.
How Fe2 and s2- spontaneously react in heterogeneous systems?
5 answers
In heterogeneous systems, the spontaneous reaction between Fe2 and S2- occurs due to the generation of reactive oxygen species (ROS) in Fe x S y -mediated advanced oxidation processes (Fe x S y -AOPs). The structural Fe(II) in Fe x S y plays a crucial role in activating oxidants like O2, leading to the production of various ROS, including •OH, •O2-, FeⅣO2+, and others, which contribute to the oxidative removal of pollutants. Additionally, the oxidation reaction of Fe x S y induces an acid-producing effect, while the regeneration of Fe(II) is facilitated by soluble S intermediates like S2-, S22-, and SO32-, enhancing ROS generation and pollutant removal. This process highlights the significance of electron transfer mechanisms influenced by factors like solution properties and surface characteristics in driving the spontaneous reactions between Fe2 and S2- in heterogeneous systems.
What names are applied to the two types of BJT transistors?
5 answers
The two types of Bipolar Junction Transistors (BJTs) are named based on the arrangement of semiconductor materials within them. The first type is called NPN, which stands for Negative-Positive-Negative, while the second type is known as PNP, which stands for Positive-Negative-Positive. In an NPN transistor, the switch turns on when a current flows through the base, whereas in a PNP transistor, the switch turns on when there is no current through the base. These configurations are essential in determining the behavior and functionality of the transistors, influencing their applications in amplification, switching, and digital circuit elements.
What is application or daily use of adder and subtractor?
5 answers
Adder and subtractor circuits play a crucial role in digital circuits for performing arithmetic operations like addition and subtraction. These circuits are essential components in processors, where the Arithmetic Logic Unit (ALU) utilizes them for executing mathematical functions. In the realm of quantum-dot cellular automata (QCA), novel adder/subtractor designs have been proposed, leveraging the benefits of quantum technology for efficient and cost-effective computing systems. Additionally, the Universal Verification Methodology (UVM) is employed for verifying the functionality of adder-subtractor circuits, offering automation and ease of building verification environments. Overall, adder and subtractor circuits find widespread application in daily computing tasks, ensuring accurate and reliable arithmetic calculations in various digital systems.
What are the current limitations in the growth of AlN using magnetron sputtering techniques?
5 answers
Current limitations in the growth of AlN using magnetron sputtering techniques include challenges in predicting thin film structures with varying sputter parameters, the need for tight control of crystallinity, thickness uniformity, and stress for high-volume production, and the sensitivity of the formation of transparent AlN phases to N2 flow rates in different sputtering processes. Additionally, achieving high-quality AlN films requires specific processing conditions such as an optimal N2/Ar ratio and low pressure for growth. Furthermore, the deposition of AlN on different substrates can lead to varying stress states within the film, impacting its properties. These limitations highlight the importance of precise control over deposition parameters and substrate conditions to enhance the quality and uniformity of AlN thin films grown via magnetron sputtering techniques.
How does temperature could result to more radiation?
5 answers
Temperature can influence radiation emission in various ways. Higher temperatures lead to increased energy emission from objects, with visible energy emitted around 650°C. For instance, in the case of parametric x-ray radiation (PXR) from a Si crystal bombarded by electrons, cooling the crystal to liquid-nitrogen temperature enhances radiation intensity compared to room temperature. Moreover, studies on human peripheral blood lymphocytes show that aberration frequency post-irradiation is significantly higher at 37°C compared to 5°C, indicating a temperature-dependent effect on radiation-induced damage. Additionally, research on radiation absorption in living tissues at different temperatures suggests that radiation effects may be more pronounced at higher temperatures, highlighting the potential risks of combining elevated temperatures with x-radiation, especially in patients with body temperatures around 40°C.
What are the elastoplastic properties of GaN thin films under different loading conditions?
5 answers
The elastoplastic properties of GaN thin films vary under different loading conditions. Studies have shown that the nanohardness (H) and reduced elastic modulus (E*) of a-plane GaN thin films grown on r-plane sapphire increase with higher threading dislocation (TD) density, affecting the elastoplastic behavior due to TDs acting as obstacles for basal plane slip. Additionally, nanoindentation-induced mechanical deformation in GaN films leads to the nucleation of dislocations after repeated loading-reloading cycles, resulting in slip bands and mobile dislocations under stress fields, impacting the material properties such as hardness (H). These findings highlight the intricate relationship between dislocation density, mechanical behavior, and material properties in GaN thin films under varying loading conditions.