Search or ask a question

When did Shockley invent the transistor?

Instruction-level parallelism

Field-effect transistor

Threshold voltage

Answers from top 6 papers

PDF

Open Access

More filters

Papers (6)	Insight
Journal Article•DOI Electronic transport of n-type CdSe quantum dot films: Effect of film treatment Dong Yu, Brian L. Wehrenberg, Praket P. Jha, Jiasen Ma, Philippe Guyot-Sionnest - Show less +4 more 31 May 2006-Journal of Applied Physics 106 Citations	The high mobility allowed demonstrating the operation of a field effect transistor.
Journal Article•DOI Source-gated thin-film transistors John M. Shannon, Ed Gerstner - Show less +1 more 22 Jul 2003-IEEE Electron Device Letters 86 Citations	The authors introduce a source-gated transistor that overcomes some of the fundamental limitations of the field-effect transistor.
Journal Article•DOI Silicon Single-Hole Transistor with Large Coulomb Blockade Oscillations and High Voltage Gain at Room Temperature Hidehiro Harata, Hidehiro Harata, Masumi Saitoh, Toshiro Hiramoto - Show less +3 more 02 May 2005-Japanese Journal of Applied Physics 14 Citations	This is the first demonstration of room-temperature operating single-hole transistor with high voltage gain.
Journal Article•DOI Superspeculative microarchitecture for beyond AD 2000 Mikko H. Lipasti, J.P. Shen - Show less +1 more 01 Sep 1997-IEEE Computer 76 Citations	Based on their research at Carnegie Mellon University, the authors argue for billion-transistor uniprocessors.
Journal Article•DOI Positive-Feedback Level Shifter Logic for Large-Area Electronics Daniele Raiteri, Pieter van Lieshout, Arthur van Roermund, Eugenio Cantatore - Show less +3 more 10 Jan 2014-IEEE Journal of Solid-state Circuits 44 Citations	This is to the authors' knowledge the organic circuit with the highest transistor count ever demonstrated.
Journal Article•DOI Multi-gate synergic modulation in laterally coupled synaptic transistors Li Qiang Zhu, Li Qiang Zhu, Hui Xiao, Yanghui Liu, Changjin Wan, Yi Shi, Qing Wan - Show less +6 more 05 Oct 2015-Applied Physics Letters 25 Citations	Electrical performance of the transistor can be evidently improved when the device is operated in a tri-gate synergic modulation mode.

My columns

Related Questions

What company invented transistor?6 answers

When did transistors become popular?7 answers

When was the silicon transistor invented?13 answers

When was the transistor first invented?7 answers

When were transistor computers invented?6 answers

Who built the first transistor?5 answers

See what other people are reading

What is the number of studies on memcapacitor emulator in the literature?

There are five studies on memcapacitor emulators in the literature. These studies propose innovative designs for memcapacitor emulators using various components such as current feedback amplifiers, analog multipliers, resistors, and capacitors. The emulators are designed to operate at high frequencies, exhibit non-volatility behavior, and are robust against mismatch and process variations. Additionally, the studies demonstrate the expandability of memcapacitor circuits using memristors and mutators, enabling the construction of complex circuit configurations. The proposed emulators have been validated through simulations, experimental verifications, and post-layout analyses, showcasing their efficiency, low power consumption, and applicability in practical applications like neuromorphic computing.What are good papers that explain the delta method of minimizing offset thermal EMFs?

The delta method for minimizing offset thermal EMFs is well explained in the paper by Rodenbeck et al., where they introduce a technique called "delta modulation" (DM) to improve the sensitivity of RF subsamplers in radar and coherent receiver applications. This method involves feeding the time-average output of a monobit analog-to-digital converter (ADC) back to the ADC input with opposite polarity to correct for aggregate DC offsets, enhancing ADC sensitivity. The paper demonstrates the effectiveness of analog and digital DM circuits in correcting output quantization imbalance, even under varying temperature conditions, and improving baseband spectrum quality for realistic radar applications. The DM technique does not impact ADC linearity, as confirmed through two-tone testing.How transparent oxides can be used as gate dielectric?

Transparent oxides can be utilized as gate dielectrics in various applications. For instance, in the study by Alshammari et al., a novel process was developed to fabricate thin film transistors (TFTs) using a binary oxide, Hf x Zn1- x O2- δ (HZO), for all transistor layers, including the gate and dielectric layers. This approach allowed for tuning the electronic properties of the oxide from conducting to insulating by adjusting the chemical precursors' flow ratio. Additionally, the work by ViolBarbosa et al. demonstrated that ionic liquid gating can induce a metallic phase in insulating films of WO3, altering the material's conductivity while maintaining transparency in the visible range. These studies highlight the versatility of transparent oxides in serving as gate dielectrics with tunable electronic properties for various electronic devices.What is the difference between constant voltage and constant current in gel electrophoresis?

In the context of gel electrophoresis, the difference between constant voltage and constant current lies in their control mechanisms and adaptability. Constant current control in microchip electrophoresis directly indicates the velocity of the electroosmotic flow (EOF), making it more convenient than constant voltage control. Constant voltage electromigration testing offers advantages over constant current testing for materials with varying geometries, while the benefits are minimal for properly produced materials. A constant current circuit with high breakdown-voltage transistors is designed for high voltage circuits with low manufacturing costs. Additionally, a constant current constant voltage circuit stabilizes voltage and controls levels effectively, featuring strong anti-interference capabilities. These findings highlight the nuanced differences and applications of constant voltage and constant current in gel electrophoresis.Is there an article about a led-array with individually addressable electrodes?

Yes, there are multiple articles discussing LED arrays with individually addressable electrodes. One article presents a novel approach using GaN micro-light-emitting diodes (LEDs) with individually addressed n-electrodes, allowing for faster modulation and compatibility with NMOS transistor-based drivers. Another study introduces GaN-based micro-LED arrays with a reversed electrode structure, featuring a common p-electrode and individually addressable n-electrodes, enabling high-performance characteristics and compatibility with NMOS drivers for faster modulation. Additionally, a different research paper describes the fabrication of individually addressable GaN microdisk LED arrays, showcasing ultrahigh resolution and stable operation in free-standing and flexible forms. These articles collectively highlight advancements in LED array technology with individually addressable electrodes for various applications.Is there an article about a led-array with individually addressable cathodes and individually addressable anodes?

Yes, there are articles discussing LED arrays with individually addressable cathodes and individually addressable anodes. One study presents a novel inverted, vertical microdisplay prototype device with individually addressing cathodes, demonstrating the use of silicon-based vertical Micro-LEDs with this configuration. Another article showcases a GaN-based micro-LED array with a common p-electrode and individually addressable n-electrodes, designed for faster modulation and visible light communication applications. These innovative LED array designs offer improved performance characteristics, such as enhanced brightness, heat dissipation, and modulation bandwidth, making them suitable for high-resolution displays, wearables, and VR/AR headsets.Production of field effect transistors?

The production of field effect transistors involves several key steps outlined in the provided research contexts. These steps include depositing semiconductor material on a substrate, forming gate dielectric layers, arranging gate electrode layers, creating contact trenches, back-producing gate electrodes, forming source/drain regions, and connecting them with contact structures. Additionally, methods include depositing insulating films, refractory metal films, and gate metals, etching to define gate structures, and utilizing etching stopper layers to maintain film thickness. Furthermore, the process may entail depositing conducting and insulating materials on a temporary substrate before transferring them to the final substrate. Techniques like self-assembled monolayers and Schottky junctions are also employed to enhance transistor performance, reduce resistance, and improve reliability.What are the common fabrication steps used in the production of bipolar junction transistors?

The common fabrication steps in producing bipolar junction transistors involve several key processes. These include implantation procedures to form different regions with varying dopant concentrations, creating extrinsic collector and base regions buried in the semiconductor substrate, forming surface-doped regions and insulating layers on the semiconductor substrate, and patterning photoresists to define openings for implantation processes with varying dopant concentrations. Additionally, steps such as forming well regions with different concentrations in the base and emitter regions, defining trenches and openings for silicon and silicon-germanium regions, and establishing a composite base region with specific dopant concentration levels are crucial in the fabrication process of bipolar junction transistors.What is the Reverse Rection Coefficient of Surface Conjugation Parameter in ISFET biosensor?

The Reverse Reaction Coefficient of Surface Conjugation Parameter in an ISFET biosensor refers to the rate at which the surface-bound molecules detach from the sensor's surface. This parameter is crucial in determining the sensor's response time and overall efficiency. Various ISFET models have been developed to simulate the behavior of these biosensors, incorporating factors like the modulation of surface potential during viral molecule interactionand the chemical influence of ionic interactions on the threshold voltage. Additionally, ISFET-based biosensors have been successfully designed for detecting explosives, utilizing specific enzymes like nitroreductase for high sensitivity and specificity. These biosensors demonstrate analytical responses to various compounds, showcasing their potential for rapid and accurate detection in different samples.Can i use primeflex instead of bootstrap?

While both PrimeFlex and Bootstrap are useful techniques, they serve different purposes. PrimeFlex is not a direct substitute for Bootstrap. PrimeFlex is a method used for driving circuits without requiring an extra power supply, whereas Bootstrap is a resampling method commonly used in statistical analysis. Bootstrap is advantageous for dealing with skewed data but may have limitations in terms of confidence interval coverage, especially in studies with a small number of clusters. On the other hand, PrimeFlex overcomes the need for an additional power supply in driving circuits, reducing power consumption and meeting circuit demands effectively. Therefore, the choice between PrimeFlex and Bootstrap would depend on the specific application requirements in either circuit design or statistical analysis.Are there led arrays with individual addressable p and n contacts?

LED arrays with individual addressable p and n contacts have been developed. These arrays feature a unique structure where each LED element has its own n-electrode while sharing a common p-electrode. This design minimizes series-resistance differences and enables compatibility with n-type metal-oxide-semiconductor (NMOS) transistor-based drivers for faster modulation. The individual addressability of the n-electrodes allows for precise control over each LED element in the array, enhancing performance characteristics such as optical power and modulation bandwidth. These advancements in LED array technology offer promising applications in areas like visible light communication, where high-speed data transmission without errors has been achieved using these individually addressable LED arrays.