When was the silicon transistor invented?
Answers from top 13 papers
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| Papers (13) | Insight |
|---|---|
02 Dec 2001 26 Citations | The CMOS transistor with the silicon nitride gate insulator formed by the microwave-excited plasma and TaN/Ta/TaN metal gate on (110) surface orientation silicon having a higher current drive capability and high integration density is the most practical candidate for lOOnm technology node and beyond. |
69 Citations | It is argued that the device is suitable for integration with silicon electronics and silicon optoelectronic devices. |
21 Citations | It emerges from the analysis that the bipolar transistor appears to be an attractive input device for head amplifiers intended for large acquisition systems associated with silicon detectors. |
| It is shown that the action of a parasitic bipolar transistor should be taken into account only when the channel length is short enough due to the much smaller carrier mobility in polysilicon compared with single crystalline silicon. | |
41 Citations | Normal transistor performance was observed after the GaAs LED fabrication, indicating that GaAs and Si processing technologies appear to be compatible. |
| This is the smallest SiGe heterostructure-channel MOS transistor reported to date. | |
| The fT of 213 GHz is the highest value yet reported for any silicon-based bipolar transistor. | |
17 May 2004 11 Citations | Experimental results obtained for a silicon RF bipolar transistor demonstrate validity of the method. |
| We propose a light emitting transistor based on silicon nanocrystals provided with 200Mbits∕s built-in modulation. | |
55 Citations | The measurements reveal that the fabricated devices show the desired transistor characteristics. |
| The silicon transistor will certainly allow further rapid improvements in price and performance for at least another decade, but it might yet be succeeded by some molecular-scale device that exhibits amplification and is therefore essentially a drop-in in terms of circuits and system architectures. | |
| The combination of both a transistor and a mechanical element into a hybrid unit enables on-chip functionality and performance previously unachievable in silicon. | |
12 Citations | Furthermore, calculations of electron concentration profiles in the source show why the source-gated transistor in hydrogenated amorphous silicon is more stable than an equivalent FET. |