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Which amplifier has highest current gain? 

Power-added efficiency
Direct-coupled amplifier
Fully differential amplifier
Amplifier
RF power amplifier

Answers from top 20 papers

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Papers (20)Insight
Proceedings Article•DOI
Single-stage G-band HBT amplifier with 6.3 dB gain at 175 GHz
Miguel Urteaga, Dennis W. Scott, T. Mathew, S. Krishnan, Yun Wei, Mark J. W. Rodwell 
21 Oct 2001
The gain-per-stage of the amplifier is amongst the highest reported in any transistor technology in this frequency band.
Open access•Proceedings Article•DOI
A 112–134 GHz SiGe amplifier with peak output power of 120 mW
Hsin-Chang Lin, Gabriel M. Rebeiz 
01 Jun 2014
To our knowledge, this is the highest power silicon-based D-band amplifier to-date.
Journal Article•DOI
Improving the bandwidth gain-independence and accuracy of the current feedback amplifier
Stephan J. G. Gift, Brent Maundy 
14 Mar 2005-IEEE Transactions on Circuits and Systems Ii-express Briefs
37 Citations
The new circuit possesses the gain accuracy and bandwidth of the current feedback amplifier but realizes significant improvement in bandwidth accuracy and bandwidth gain-independence.
Proceedings Article•DOI
A 20-Watt Ka-band GaN high power amplifier MMIC
C. Y. Ng, Kazutaka Takagi, T. Senju, Keiichi Matsushita, Hiroyuki Sakurai, Ken Onodera, Shinichiro Nakanishi, K. Kuroda, Tomohide Soejima 
29 Dec 2014
30 Citations
To the authors' best knowledge, this is the highest output power ever reported for GaN high power amplifier MMIC at Ka-band.
Proceedings Article•DOI
A balanced power amplifier utilizing the reflected input power
Jongsik Lim, Chun-Seon Park, Ja-Kyung Koo, Hyeon-Won Cha, Yongchae Jeong, Sang-Min Han, Dal Ahn 
01 Dec 2009
23 Citations
Therefore final output power, power gain, and efficiency performances of the proposed balanced amplifier are highly improved compared to the conventional balanced amplifier.
Proceedings Article•DOI
A pipelined SAR ADC reusing the comparator as residue amplifier
Miguel Gandara, Wenjuan Guo, Xiyuan Tang, Long Chen, Yeonam Yoon, Nan Sun 
01 Apr 2017
To the authors' knowledge, this work achieves the highest interstage gain of any reported dynamic amplifier.
Proceedings Article•DOI
A compact, fully differential D-band CMOS amplifier in 65nm CMOS
Zhiwei Xu, Qun Jane Gu, I-Ning Ku, Mau-Chung Frank Chang 
01 Dec 2010
17 Citations
To our best knowledge, this amplifier achieves the highest power gain for CMOS amplifier beyond 100GHz and paves the way for D-band radar and passive imaging system applications.
Journal Article•DOI
D-Band and G-Band High-Performance GaN Power Amplifier MMICs
Maciej Cwiklinski, Peter Brückner, Stefano Leone, Christian Friesicke, Hermann Mabler, Roger Lozar, Sandrine Wagner, Rudiger Quay, Oliver Ambacher 
10 Sep 2019-IEEE Transactions on Microwave Theory and Techniques
42 Citations
To the best of our knowledge, these amplifiers show the highest gain above 170 GHz and the highest output power above 150 GHz among any reported GaN-based MMICs.
Open access•Journal Article•DOI
40 dB gain all fiber bismuth-doped amplifier operating in the O-band.
Naresh Kumar Thipparapu, Yiping Wang, Andrey A Umnikov, Pranabesh Barua, David J. Richardson, Jayanta K. Sahu 
01 May 2019-Optics Letters
34 Citations
To the best of our knowledge, this is the highest gain reported to date using Bi-doped fiber as a gain medium.
Proceedings Article•DOI
Distributed Amplifier MMIC with 21 dB Gain and 90 GHz Bandwidth Using InP-Based DHBTs
K. Schneider, Rachid Driad, R. E. Makon, G. Weimann 
19 Nov 2007
To our best knowledge, this represents the highest gain bandwidth product achieved for single-stage amplifiers in any technology reported to date.
Journal Article•DOI
A 70–80-GHz SiGe Amplifier With Peak Output Power of 27.3 dBm
Hsin-Chang Lin, Gabriel M. Rebeiz 
13 Jun 2016-IEEE Transactions on Microwave Theory and Techniques
41 Citations
To the best of our knowledge, this is the highest power silicon-based E-band amplifier to date.
Proceedings Article•DOI
A Ka-band grid amplifier module with over 10 Watts output power
Michael P. Delisio, Blythe C. Deckman, Chun-Tung Cheung, S.C. Martin, D.P. Nakhla, E.E. Hartmann, C.J. Rollison, J.B. Pacetti, J.J. Rosenberg 
06 Jun 2004
To our knowledge, this is the highest power ever reported from a monolithic single-chip power amplifier at Ka-band.
Journal Article•DOI
A 2 watt, 8-14 GHz HBT power MMIC with 20 dB gain and >40% power-added efficiency
F. Ali, A. Gupta, M. Salib, B. W. Veasel, Dale E. Dawson 
01 Dec 1994-IEEE Transactions on Microwave Theory and Techniques
20 Citations
To our knowledge, this is the highest efficiency, the highest gain, and the highest output power reported for any monolithic power amplifier covering a 6 GHz bandwidth in the X-Ku band.
Proceedings Article•DOI
High gain, high efficiency vertical-cavity semiconductor optical amplifiers
E.S. Bjorlin, P. Abraham, D. Pasquariello, Joachim Piprek, Yi-Jen Chiu, John E. Bowers 
07 Aug 2002
This is the highest reported amplifier gain for a long wavelength VCSOA to date.
Proceedings Article•DOI
A 500W Push-Pull AlGaN/GaN HEMT Amplifier for L-Band High Power Application
Arata Maekawa, Takashi Yamamoto, Eizo Mitani, Seigo Sano 
11 Jun 2006
44 Citations
To the best of our knowledge, this is the highest power ever reported for L-band GaN-related amplifier
Proceedings Article•DOI
High Gain G-Band MMIC Amplifiers Based on Sub-50 nm Gate Length InP HEMT
P.H. Liu, W. Yoshida, J. Lee, L. Dang, J. Wang, W. Liu, J. Uyeda, D. Li, X.B. Mei, William R. Deal, Michael E. Barsky, Y.M. Kim, M. Lange, T.P. Chin, Vesna Radisic, Todd Gaier, A. Fung, R. Lai 
14 May 2007
To our knowledge, this is the highest amplifier gain per stage achieved at this frequency range.
Journal Article•DOI
Flux-Flow-Type Josephson Linear Amplifier with Large Gain and Wide Linear Range
Tadao Nagatsuma, Keiji Enpuku, Hiroaki Iwakura, Keiji Yoshida 
20 Aug 1985-Japanese Journal of Applied Physics
An equivalent circuit of the amplifier has also been presented, which shows that the device is most suitable for current amplification with large gain in low impedance circuits.
Proceedings Article•DOI
A 90-GHz power amplifier with 18-dBm output power and 26 GHz 3-dB bandwidth in standard RF 65-nm CMOS technology
Zuo-Min Tsai, Yuan-Hung Hsiao, Hsin-Chiang Liao, Huei Wang 
02 Jun 2013
To the authors' knowledge, this power amplifier achieves the highest output power among the reported CMOS PAs at this frequency.
Journal Article•DOI
A 50 to 70 GHz Power Amplifier Using 90 nm CMOS Technology
Jing-Lin Kuo, Zuo-Min Tsai, Kun-You Lin, Huei Wang 
01 Jan 2009-IEEE Microwave and Wireless Components Letters
51 Citations
To the author's knowledge, this PA demonstrates the highest output power, with the highest gain among the reported CMOS PAs in V-band.
Proceedings Article•DOI
Millimeter-wave high power amplifiers using pseudomorphic HEMTs
A.K. Sharma, G. Onak, D. Yamauchi, D.I. Stones, J. Goel, Richard Lai, K.L. Tan 
23 May 1994
These state-of-the-art results represent the highest output power and power gain reported using monolithic amplifiers as building blocks.<<ETX>>

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